MICROWAVE POWER GaAs FET TIM1414-4-252 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=36.0 dBm at 13.75 GHz to 14.5 GHz HIGH GAIN G1dB=5.5 dB at 13.75 GHz to 14.5 GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Power Added Efficiency Channel Temperature Rise ( Ta= 25°C ) SYMBOL P1dB CONDITIONS UNIT dBm MIN. 35.0 G1dB VDS= 9V f= 13.75 to 14.5GHz dB 4.5 5.5 ⎯ A % °C ⎯ ⎯ ⎯ 1.7 19 2.2 UNIT mS MIN. MAX. ⎯ TYP. 1200 V -2.0 -3.5 -5.0 A ⎯ 4.0 ⎯ V -5 ⎯ ⎯ °C/W ⎯ 2.9 3.5 IDS1 ηadd ΔTch (VDS X IDS + Pin – P1dB) X Rth(c-c) TYP. MAX. 36.0 ⎯ ⎯ ⎯ 70 Recommended gate resistance(Rg) : Rg= 150 Ω(MAX.) ELECTRICAL CHARACTERISTICS CHARACTERISTICS Transconductance Saturated Drain Current IDSS Gate-Source Breakdown Voltage Thermal Resistance VGSO CONDITIONS VDS= 3V IDS= 2.0 A VDS= 3V IDS= 60mA VDS= 3V VGS= 0V IGS= -60μA Rth(c-c) Channel to Case Pinch-off Voltage SYMBOL ( Ta= 25°C ) gm VGSoff ⎯ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. Jul. 2006 TIM1414-4-252 ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C ) CHARACTERISTICS SYMBOL UNIT RATING Drain-Source Voltage VDS V 15 Gate-Source Voltage VGS V -5 Drain Current IDS A 5.2 Total Power Dissipation (Tc= 25 °C) PT W 42.8 Channel Temperature Tch °C 175 Storage Temperature Tstg °C -65 to +175 PACKAGE OUTLINE (2-9D1B) Unit: mm (1) Gate (2) Source (3) Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. 2 TIM1414-4-252 RF PERFORMANCE Pout(dBm) Output Power (Pout) vs. Frequency VDS=9V IDS≅1.7A 37 Pin=30.5 dBm 36 35 34 33 13.75 14.1 14.5 Frequency(GHz) Output Power(Pout) vs. Input Power(Pin) 41 freq.=14.5GHz 40 VDS=9V 40 IDS≅1.7A 39 30 Pout 37 36 20 35 ηadd 34 10 33 32 0 23 25 27 29 Pin(dBm) 3 31 33 ηadd(%) Pout(dBm) 38 TIM1414-4-252 Power Dissipation(PT) vs. Case Temperature(Tc) PT(W) 40 30 20 10 0 0 40 80 120 Tc( °C ) 4 160 200