MICROWAVE POWER GaAs FET TIM1414-4LA PRELIMINARY MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWERT n BROAD BAND INTERNALLY MATCHED P1dB=36.5dBm at 14.0GHz to 14.5GHz n HERMETICALLY SEALED PACKAGE n HIGH GAIN G1dB=6.5dB at 14.0GHz to 14.5GHz RF PERFORMANCE SPECIFICATIONS ( Ta= 25° C ) CHARACTERISTICS SYMBOL CONDITION Output Power at 1dB P1dB Compression Point VDS= 9V Power Gain at 1dB G1dB f= 14.0 to 14.5GHz Compression Point Drain Current IDS1 Gain Flatness ∆G ηadd Power Added Efficiency rd 3 Order Intermodulation IM3 Distortion NOTE Drain Current IDS2 ∆Tch Channel Temperature Rise VDS X IDS X Rth(c-c) NOTE : Two Tone Test, Po=25dBm (Single Carrier Level) UNIT dBm MIN. 36.0 TYP. MAX. 36.5 dB 6.0 6.5 A dB % dBc -42 1.7 23 -45 2.2 ±0.8 A °C 1.7 2.2 70 UNIT TYP. mS MIN. 1200 MAX. V -2.0 -3.5 -5.0 A 4.0 5.2 V -5 °C/W 2.9 3.5 ELECTRICAL CHARACTERISTICS ( Ta= 25° C ) CHARACTERISTICS Transconductance Pinch-off Voltage SYMBOL gm VGSoff Saturated Drain Current IDSS Gate-Source Breakdown Voltage Thermal Resistance VGSO Rth(c-c) CONDITION VDS = 3V IDS = 2.0A VDS = 3V IDS = 60mA VDS = 3V VGS= 0V IGS= -60µA Channel to Case u The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Jun. 2002 TIM1414-4LA ABSOLUTE MAXIMUM RATINGS ( Ta= 25° C ) CHARACTERISTICS SYMBOL UNIT RATING Drain-Source Voltage VDS V 15 Gate-Source Voltage VGS V -5 Drain Current IDS A 5.2 Total Power Dissipation (Tc= 25 °C) PT W 30 Channel Temperature Tch °C 175 Storage Temperature Tstg °C -65 to +175 4-R2.4 2.0MIN. PACKAGE OUTLINE (2-9D1B) • ‚ Source ‚ . 1.8±0.3 0.2MAX 8.5 MAX. 3.2MAX +0.1 0.1 -0.05 13.0±0.3 17.0 MAX ƒ Drain 2.0MIN 0.5±0.15 1.2±0.3 ƒ 9.7±0.3 2.5±0.3 ‚ • Gate HANDLING PRECAUTIONS FOR PACKAGED TYPE Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. 2