MICROWAVE POWER GaN HEMT TGI1314-50L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER Pout=47.0dBm at Pin=42.0dBm HIGH GAIN GL=8.0dB at 13.75GHz to 14.5GHz BROAD BAND INTERNALLY MATCHED HEMT HERMETICALLY SEALED PACKAGE LOW INTERMODULATION DISTORTION IM3(Min.)=−25dBc at Po=40.0dBm Single Carrier Level RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power SYMBOL Pout CONDITIONS Gain Flatness Drain Current Power Added Efficiency Gate Current ΔG IDS1 ηadd IgRF VDS = 24V f = 13.75 to 14.5GHz Linear Gain GL @Pin=20dBm 3rd Order Intermodulation IM3 Two-Tone Test Distortion Drain Current IDS2 Po= 40.0dBm (Single Carrier Level) Channel Temperature Rise ΔTch IDSset≅2.0A @ Pin=42dBm (VDS X IDS + Pin – Pout) X Rth(c-c) UNIT dBm MIN. 46.0 TYP. 47.0 MAX. － dB A % mA － － － -40 － 5.0 29 － ±0.8 6.0 － +100 dB 7.0 8.0 － dBc -25 － － A °C － 5.0 6.0 － 130 150 UNIT MIN. TYP. MAX. S ⎯ 4.5 ⎯ V -1 -4 -6 A ⎯ 15 ⎯ V -10 ⎯ ⎯ °C/W ⎯ ⎯ 1.6 Recommended gate resistance(Rg) : Rg= 13.3 Ω (TYP.) ELECTRICAL CHARACTERISTICS ( Ta= 25°C ) CHARACTERISTICS Transconductance SYMBOL gm CONDITIONS 5V 5.0A 5V 23mA 5V 0V -10mA Saturated Drain Current IDSS Gate-Source Breakdown Voltage Thermal Resistance VGSO VDS= IDS= VDS= IDS= VDS= VGS= IGS= Rth(c-c) Channel to Case Pinch-off Voltage VGSoff The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefore advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. December 9, 2011 TGI1314-50L ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C ) CHARACTERISTICS SYMBOL UNIT RATING Drain-Source Voltage VDS V 50 Gate-Source Voltage VGS V -10 Drain Current IDS A 15 Total Power Dissipation (Tc= 25 °C) PT W 140 Channel Temperature Tch °C 250 Storage Tstg °C -65 to +175 PACKAGE OUTLINE ( 7- AA07A ) Unit in mm c Gate d Source e Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. 2