TOSHIBA SSM5H08TU

SSM5H08TU
Silicon N Channel MOS Type (U-MOSⅢ)/Silicon Epitaxial Schottky Barrier Diode
SSM5H08TU
DC-DC Converter
Unit: mm
•
Nch MOSFET and schottky diode combined in one package
•
Low RDS (ON) and low VF
Absolute Maximum Ratings (Ta = 25°C) MOSFET
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDS
20
V
Gate-Source voltage
VGSS
±12
V
ID
1.5
Drain current
DC
Pulse
Drain power dissipation
Channel temperature
IDP (Note 2)
6.0
PD (Note 1)
0.5
t = 10s
0.8
Tch
150
A
W
°C
Absolute Maximum Ratings (Ta = 25°C) SCHOTTKY
UFV
DIODE
Characteristics
Symbol
Rating
Unit
VRM
25
V
Reverse voltage
VR
20
V
Average forward current
IO
0.5
A
IFSM
2 (50 Hz)
A
Tj
125
°C
Maximum (peak) reverse voltage
Peak one cycle surge forward current
(non-repetitive)
Junction temperature
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-2R1A
Weight: 7 mg (typ.)
Absolute Maximum Ratings (Ta = 25°C) MOSFET, DIODE COMMON
Characteristics
Symbol
Rating
Unit
Storage temperature
Tstg
−55~125
°C
Operating temperature
Topr
(Note 3)
−40~100
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu pad: 645 mm2)
Note 2: Pulse width limited by max channel temperature
Note 3: Operating temperature limited by max channel temperature and max junction temperature
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SSM5H08TU
Marking
Equivalent Circuit
5
4
5
3
1
4
KER
1
2
2
3
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is
protected against electrostatic discharge. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
The Channel-to-Ambient thermal resistance Rth (ch-a) and the drain power dissipation PD vary according to the
board material, board area, board thickness and pad area. When using this device, be sure to take heat dissipation
fully into account.
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SSM5H08TU
MOSFET
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Gate leakage current
Min
Typ.
Max
Unit
VGS = ±12 V, VDS = 0
⎯
⎯
±1
μA
V (BR) DSS
ID = 1 mA, VGS = 0
20
⎯
⎯
V (BR) DSX
ID = 1 mA, VGS = -12 V
12
⎯
⎯
IGSS
Drain-Source breakdown voltage
Test Condition
V
VDS = 20 V, VGS = 0
⎯
⎯
1
μA
Gate threshold voltage
Vth
VDS = 3 V, ID = 0.1 mA
0.4
⎯
1.1
V
Forward transfer admittance
|Yfs|
VDS = 3 V, ID = 0.75 A
(Note 4)
1.4
2.8
⎯
S
Drain-Source on-resistance
RDS (ON)
ID = 0.75 A, VGS = 4 V
(Note 4)
⎯
140
160
ID = 0.75 A, VGS = 2.5 V
(Note 4)
⎯
180
220
Drain Cut-off current
IDSS
mΩ
Input capacitance
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
⎯
125
⎯
pF
Reverse transfer capacitance
Crss
VDS = 10 V, VGS = 0, f = 1 MHz
⎯
17
⎯
pF
Output capacitance
Coss
VDS = 10 V, VGS = 0, f = 1 MHz
⎯
42
⎯
pF
Switching time
Turn-on time
ton
VDD = 10 V, ID = 0.75 A
⎯
15.5
⎯
Turn-off time
toff
VGS = 0~2.5 V, RG = 4.7 Ω
⎯
8.5
⎯
ns
Note 4: Pulse measurement
Switching Time Test Circuit
(b) VIN
(a) Test circuit
2.5 V
OUT
0
10 μs
RG
IN
2.5 V
VDD = 10 V
RG = 4.7 Ω
Duty <
= 1%
VIN: tr, tf < 5 ns
Common source
Ta = 25°C
0V
(c) VOUT
VDD
90%
10%
VDD
90%
10%
VDS (ON)
tr
ton
tf
toff
Precaution
Vth can be expressed as voltage between gate and source when the low operating current value is ID = 100 μA for
this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a
lower voltage than Vth.
(The relationship can be established as follows: VGS (off) < Vth < VGS (on))
Be sure to take this into consideration when using the device.
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SSM5H08TU
Schottky Diode
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
VF (1)
IF = 0.3 A
⎯
0.38
0.45
V
VF (2)
IF = 0.5 A
⎯
0.43
⎯
V
Reverse current
IR
VR = 20 V
⎯
⎯
50
μA
Total capacitance
CT
VR = 0 V, f = 1 MHz
⎯
46
⎯
pF
Forward voltage
Precaution
The schottky barrier diodes of this product have large-reverse-current-leakage characteristics compared to
other switching diodes. This current leakage and improper operating temperature or voltage may cause
thermal runaway resulting in breakdown. Take forward and reverse loss into consideration in radiation design
and safety design.
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SSM5H08TU
MOS Electrical Characteristics Graph
I D - V G S (MO S FET)
I D - V D S (MO S FET)
3.0
10000
4.0V
Common Source
VDS =3V
Common Source
Ta=25℃
2.5V
1000
2.0V
2.0
Drain current I D (mA)
Drain current I D (mA)
2.5
1.5
VGS =1.8V
1.0
100
Ta=85℃
25℃
10
1
0.5
-25℃
0.1
0.0
0.01
0.0
0.5
1.0
1.5
2.0
0
1
2
3
R D S(O N) - V G S (MO S FET )
R D S (O N) - ID (MO S FET )
0.5
500
Common Source
I D=0.75A
Common Source
Ta=25℃
0.4
300
200
2.5V
100
R DS(ON) (Ω)
Drain-Source on resistance
R DS(ON) (mΩ)
Drain-Source on resistance
400
0.3
25℃
0.2
Ta=85℃
0.1
VGS =4.0V
-25℃
0
0
0
0.5
1
1.5
2
0
2.5
2
Drain current I D (A)
4
6
8
Gate-Source voltage V GS (V)
V th - Ta (MO S FET )
R D S(O N) - T a (MO S FET )
2
0.5
Common Source
I D=0.75A
0.4
1.8
Common Source
I D=0.1mA
1.6
VDS =3V
Gate threshold voltage
Vth(V)
1.4
R DS(ON) (Ω)
Drain-Source on resistance
4
Gate-Source voltage V GS (V)
Drain-Source voltage V DS (V)
0.3
2.5V
0.2
4.0V
0.1
1.2
1
0.8
0.6
0.4
0.2
0
0
-25
0
25
50
75
-25
100
0
25
50
75
100
Ambient temperture Ta (℃)
Ambient temperture Ta (℃)
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SSM5H08TU
|Yfs| - I D (MO S FET)
C - V D S (MO S FET)
1000
100
10
Capacitance C (pF)
Forward transfer admittance |Yfs| (mS)
Common Source
VDS =3V
Ta=25℃
1
C iss
100
C oss
C rss
10
Common Source
VGS =0V
f=1MHz
Ta=25℃
0.1
1
0.01
0.001
0.01
0.1
1
0.1
10
1
100
t - I D (MO S FET)
I D R - V D S (MO S FET)
1000
4
Common Source
VGS =0
Ta=25℃
3.5
Drain reverse current I DR (mA)
10
Drain-Source voltage V DS (V)
Drain current ID (A)
toff
100
Switching time t (ns)
3
Common Source
VDD=10V
2.5
2
1.5
VGS =0~2.5V
Ta=25℃
tf
ton
10
tr
1
1
0.5
0
0
-0.2
-0.4
-0.6
-0.8
0.1
0.01
-1
0.1
Drain-Source voltage V DS (V)
Dyn a mic In p u t Ch ara cteristic (MO S FET )
10
PD – Ta (MOSFET)
1.2
10
Common Source
VDD=10V
Mounted on FR4 board
Drain power dissipation PD (W)
8
Gate-Source voltage V GS (V)
1
Drain current I D (A)
I D=1.5A
Ta=25℃
6
4
2
0
0
0.5
1
1.5
2
2.5
3
Cu Pad: 645 mm2)
t = 10 s
0.8
0.6
DC
0.4
0.2
0
0
3.5
(25.4 mm × 25.4 mm × 1.6 t,
1
50
100
150
Ambient temperature Ta (°C)
Tatal gate charge Q g (nC)
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SSM5H08TU
S a fe o p era tin g area (MO S FET )
10
I D max (Pulsed) *
1ms
Drain current I D (A)
1
10ms
I D max
(Continuous)
100ms
DC operation
Ta=25℃
0.1
Mounted on FR4 board
(25.4 mm ・ 25.4 mm ・ 1.6 t
Cu pad: 645 mm2 )
*:Single nonrepetive Pulse
Ta ・ 25°C
Curves must be derated linealy
with increase in temperture.
0.01
0.001
0.1
1
10
100
Drain-Source voltage V DS (V)
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SSM5H08TU
SBD Electrical Characteristics Graph
IF – VF (SBD)
IR – VR (SBD)
1000
10
100
(mA)
75
100
Reverse current IR
Forward current IF
(mA)
125
50
Ta = 25°C
10
100
1
75
0.1
50
Ta = 25°C
0.01
0
1
0
0.2
0.1
0.3
0.4
0.5
Pulse measurement
0.001
0
5
0.7
rth – tw (SBD)
3000
100
1
0.001
15
VR
Single pulse
Mounted on FR4 board
2
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm )
00.1
0.1
1
Pulse width
10
20
(V)
CT – VR (SBD)
1000
10
10
Reverse voltage
(V)
Total capacitance CT (pF)
Transient thermal impedance rth (°C/W)
Forward voltage VF
0.6
100
1000
tw (s)
f = 1 MHz
Ta = 25°C
1000
100
10
1
0.01
0.1
1
Reverse voltage
8
10
VR
100
(V)
2007-11-01
SSM5H08TU
Transient Thermal Impedance Graph
Single pulse
Mounted on FR4 board
2
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm )
100
10
1
0.001
0.01
0.1
1
rth (°C/W)
Pulse width
Transient thermal impedance
Transient thermal impedance
rth (°C/W )
rth – tw (MOSFET)
1000
10
tw
100
1000
(s)
rth – tw (SBD)
1000
100
10
1
0.001
Single pulse
Mounted on FR4 board
2
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm )
0.01
0.1
1
Pulse width
9
10
tw
100
1000
(s)
2007-11-01
SSM5H08TU
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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