2SK4023 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS V) 2SK4023 Switching Regulator, DC/DC Converter １．５±０．２ Unit: mm 4 V gate drive Low drain-source ON-resistance: RDS (ON) = 4.0 Ω (typ.) High forward transfer admittance: |Yfs| = 0.8 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 450 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) １．６ ５．２±０．２ Unit Drain-source voltage VDSS 450 V Drain-gate voltage (RGS = 20 kΩ) VDGR 450 V Gate-source voltage VGSS ±30 V (Note 1) ID 1 Pulse (t = 1 ms) (Note 1) IDP 2 Drain power dissipation (Tc = 25°C) PD 20 W Single-pulse avalanche energy (Note 2) EAS 122 mJ Avalanche current IAR 1 A Repetitive avalanche energy (Note 3) EAR 2 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C １ ０．８ MAX． DC A １．1 MAX． ５．７ ４．１±０．２ Rating ０．６ MAX ２．３ ２ ３ ２．３±０．２ ２．３ Symbol Drain current １．１±０．２ ０．９ Absolute Maximum Ratings (Ta = 25°C) Characteristic ０．６ MAX． ５．５±０．２ ６．５±０．２ • • • • • ０．６±０．１５ ０．６±０．１５ JEDEC ⎯ JEITA ⎯ TOSHIBA 2-7J2B Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristic Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 6.25 °C/W Thermal resistance, channel to ambient Rth (ch-a) 125 °C/W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 90 V, Tch = 25°C, L = 203 mH, IAR = 1 A, RG = 25Ω Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 2006-11-06 2SK4023 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±25 V, VDS = 0 V ⎯ ⎯ ±10 μA Drain cutoff current IDSS VDS = 450 V, VGS = 0 V ⎯ ⎯ 100 μA V (BR) DSS ID = 10 mA, VGS = 0 V 450 ⎯ ⎯ V Vth VDS = 10 V, ID = 1 mA 2.0 ⎯ 2.0 V Drain-source ON-resistance RDS (ON) VGS = 10 V, ID = 0.5 A ⎯ 4.0 4.6 Ω Forward transfer admittance ⎪Yfs⎪ VDS = 10 V, ID = 0.5 A 0.3 0.8 ⎯ S Input capacitance Ciss ⎯ 180 ⎯ Reverse transfer capacitance Crss ⎯ 2 ⎯ Output capacitance Coss ⎯ 20 ⎯ ⎯ 7 ⎯ ⎯ 15 ⎯ ⎯ 30 ⎯ ⎯ 70 ⎯ ⎯ 5 ⎯ ⎯ 3 ⎯ ⎯ 2 ⎯ Drain-source breakdown voltage Gate threshold voltage Rise time VDS = 25 V, VGS = 0 V, f = 1 MHz tr Turn-on time ID = 0.5 A 10 V VGS 0V ton RL = 400 Ω 10 Ω Switching time Fall time VOUT tf pF ns VDD≒200 V Turn-off time toff Duty ≤ 1%, tw = 10 μs Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd VDD≒360 V, VGS = 10 V, ID = 1 A nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit (Note 1) IDR ⎯ ⎯ ⎯ 1 A (Note 1) IDRP ⎯ ⎯ ⎯ 2 A Continuous drain reverse current Pulse drain reverse current Forward voltage (diode) VDSF IDR = 1 A, VGS = 0 V ⎯ ⎯ −1.7 V Reverse recovery time trr IDR = 1 A, VGS = 0 V, ⎯ 350 ⎯ ns Reverse recovery charge Qrr dIDR/dt = 100 A/μs ⎯ 1.3 ⎯ μC Marking K4023 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-06 2SK4023 ID – VDS 10 5.75 6.0 5.5 5.25 0.4 5.0 4.75 0.2 2 4 6 Drain-source voltage 8 6.0 5.75 1.2 5.5 0.8 5.25 5.0 0.4 VGS = 4.5 V 0 VGS = 4.5 V 0 10 0 VDS (V) 10 20 VDS (V) Drain-source voltage Drain current ID (A) 0.8 100 Ta = −55°C 25 0 2 4 6 Gate-source voltage 8 16 12 8 ID = 1 A 4 0.25 0 10 Common ソース接地 source Tc = 25°C Tc = 25°C Pulse test パルス測定 0 VGS (V) 4 8 Common source ソース接地 VDS = 10 V VDS = 20 V Pulse test パルス測定 50 30 Ta = −55°C 25 1 100 0.5 0.3 0.1 0.05 0.03 0.01 0.01 0.03 0.1 0.3 16 20 VGS (V) RDS (ON) − ID Drain-source ON-resistance RDS (ON) (Ω) (S) Forward transfer admittance ⎪Yfs⎪ 3 0.5 12 Gate-source voltage ⎪Yfs⎪ – ID 5 50 VDS – VGS 1.2 0.4 40 VDS (V) 20 Common source ソース接地 VDS VDS= =1020V V Pulse test パルス測定 1.6 0 30 Drain-source voltage ID – VGS 2.0 Common source ソース接地 Tc = Tc 25°C = 25°C Pulse test パルス測定 6.25 1.6 0.6 0 8.0 10 8.0 0.8 Drain current ID (A) ID – VDS 2.0 Common source ソース接地 TcTc = 25°C = 25°C Pulse test パルス測定 Drain current ID (A) 1.0 1 3 10 5 Drain current ID (A) VGS = 10, 15 V 3 1 0.1 10 ソース接地 Common source Tc Tc==25°C 25°C VGS = 10 V パルス測定 Pulse test 0.3 0.5 1 3 5 10 Drain current ID (A) 3 2006-11-06 2SK4023 IDR – VDS 10 (A) Common source ソース接地 VV = 10 V GS GS = 10 V Pulse test パルス測定 12 ID = 1A Drain reverse current IDR 0.5 8 0.25 4 Common source ソース接地 Tc = 25°C Tc = 25°C Pulse test 3 パルス測定 1 0.3 0.1 10 3 0.03 1 −40 0 40 80 Case temperature Tc 0.01 160 0 (°C) −0.2 −0.4 VGS = 0, −1 V −0.6 −0.8 Drain-source voltage Capacitance – VDS VDS (V) 5 Common ソース接地 source VDS = VDS 10 V = 10 V ID = 1IDmA = 1 mA Pulseパルス測定 test 300 4 Vth (V) 100 50 30 Gate threshold voltage Capacitance C (pF) Ciss Coss 10 3 Common source VGS = 0V ソース接地 f ==10MHz VGS V f=1 TcMHz = 25°C Tc = 25°C 1 0.1 0.3 0.5 Crss 1 3 5 Drain-source voltage 10 30 50 3 2 1 0 −80 100 VDS (V) PD – Tc 0 40 80 VDS (V) 30 20 10 40 80 120 Case temperature Tc 120 160 (°C) Dynamic input/output characteristics 500 Drain-source voltage Drain power dissipation PD (W) −40 Case temperature Tc 40 0 0 −1.2 Vth – Tc 500 5 −1.0 160 400 (°C) 180 VDS 20 16 90 300 12 VDS = 360 V 200 8 VGS 100 0 200 Common source ID = 1 A Tc = 25°C Pulse test 0 2 4 4 6 8 VGS (V) 0 −80 Gate-source voltage Drain-source ON-resistance RDS (ON) (Ω) RDS (ON) – Tc 16 0 10 Total gate charge Qg (nC) 4 2006-11-06 2SK4023 rth – tw Normalized transient thermal impedance rth (t)/Rth (ch-a) 10 5 3 1 Duty = 0.5 0.5 0.2 0.3 0.1 PDM 0.05 0.1 Single pulse t 0.02 0.05 T 0.03 0.01 0.01 10 μ Duty = t/T Rth (ch-c) = 6.25°C/W 100 μ 1m 10 m Pulse width 100 m tw Safe operating area 1 10 (S) EAS – Tch 150 Avalanche energy EAS (mJ) 30 10 Drain current ID (A) 3 ID max (パルス) * 1 100 μs * ID max (連続) 1 ms * 0.3 直流動作 Tc = 25°C 0.1 90 60 30 0 25 * Single nonrepetitive pulse * 単発パルス Tc = 25°C Tc = 25°C 安全動作領域は温度によっ 00.3 Curves must be derated linearly てディレーティングして考 with increase in temperature. える必要があります。 00.1 0.1 120 50 75 100 125 150 Channel temperature (initial) Tch (°C) VDSS max 1 Drain-source voltage 10 100 15 V VDS (V) BVDSS IAR −15 V VDD Test circuit RG = 25 Ω VDD = 90 V, L = 203 mH 5 VDS Waveform EΕ AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ 2 − ⎝ VDSS VDD ⎠ 2006-11-06 2SK4023 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-06