2SK3445 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3445 Switching Regulator, DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 90 mΩ (typ.) • High forward transfer admittance: |Yfs| = 10 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 250 V) • Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 250 V Drain-gate voltage (RGS = 20 kΩ) VDGR 250 V Gate-source voltage VGSS ±30 V DC (Note 1) ID 20 Pulse (Note 1) IDP 80 Drain power dissipation (Tc = 25°C) PD 125 W Single pulse avalanche energy (Note 2) EAS 487 mJ Avalanche current IAR 20 A Repetitive avalanche energy (Note 3) EAR 12.5 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Drain current A JEDEC ― JEITA SC-97 TOSHIBA 2-9F1B Weight: 0.74 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to case Symbol Max Unit Rth (ch-c) 1.00 °C/W Notice: Please use the S1 pin for gate input signal return. Make sure that the main current flows into the S2 pin. Note 1: Ensure that the channel temperature does not exceed 150°C. 4 Note 2: VDD = 50 V, Tch = 25°C (initial), L = 2.06 mH, IAR = 20 A, RG = 25 Ω Note 3: Repetitive rating: pulse width limited by maximum channel temperature 1 This transistor is an electrostatic-sensitive device. Please handle with caution. 2 3 1 2006-11-21 2SK3445 Marking Part No. (or abbreviation code) K3445 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Electrical Characteristics (Note 4) (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±25 V, VDS = 0 V ⎯ ⎯ ±10 μA Drain cut-off current IDSS VDS = 250 V, VGS = 0 V ⎯ ⎯ 100 μA V (BR) DSS ID = 10 mA, VGS = 0 V 250 ⎯ ⎯ V Vth VDS = 10 V, ID = 1 mA 3.0 ⎯ 5.0 V Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 10 A ⎯ 90 105 mΩ Forward transfer admittance |Yfs| VDS = 10 V, ID = 10 A S Input capacitance Ciss Gate threshold voltage Reverse transfer capacitance Crss Output capacitance Coss Rise time Turn-on time tr ton VDS = 10 V, VGS = 0 V, f = 1 MHz Turn-off time 4.7 Ω Switching time Fall time tf toff Total gate charge (gate-source plus gate-drain) Qg Gate-source charge Qgs Gate-drain (“miller”) charge Qgd ID = 10 A VGS 10 V 0V RL = 12.5Ω Drain-source breakdown voltage 5 10 ⎯ ⎯ 2090 ⎯ ⎯ 280 ⎯ ⎯ 1000 ⎯ ⎯ 20 ⎯ ⎯ 40 ⎯ ⎯ 10 ⎯ ⎯ 40 ⎯ ⎯ 45 ⎯ ⎯ 22 ⎯ ⎯ 23 ⎯ pF VOUT VDD ∼ − 125 V Duty < = 1%, tw = 10 μs VDD ∼ − 200 V, VGS = 10 V, ID = 20 A ns nC Note 4: Connect the S1 pin and S2 pin together, then ground them except during switching time measurement. Source-Drain Ratings and Characteristics (Note 5) (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1, Note 5) IDR1 ⎯ ⎯ ⎯ 20 A Pulse drain reverse current (Note 1, Note 5) IDRP1 ⎯ ⎯ ⎯ 80 A Continuous drain reverse current (Note 1, Note 5) IDR2 ⎯ ⎯ ⎯ 1 A Pulse drain reverse current (Note 1, Note 5) IDRP2 ⎯ ⎯ ⎯ 4 A Forward voltage (diode) VDS2F Reverse recovery time trr Reverse recovery charge Qrr IDR1 = 20 A, VGS = 0 V ⎯ ⎯ −1.5 V IDR = 20 A, VGS = 0 V, dIDR/dt = 100 A/μs ⎯ 320 ⎯ ns ⎯ 2.8 ⎯ μC Note 5: IDR1, IDRP1: Current flowing between the drain and the S2 pin. Ensure that the S1 pin is left open. IDR2, IDRP2: Current flowing between the drain and the S1 pin. Ensure that the S2 pin is left open. Unless otherwise specified, connect the S1 and S2 pins together, and ground them. 2 2006-11-21 2SK3445 ID – VDS 50 15 10 Common source 9.5 Tc = 25°C Tc = 25°C 40 Pulse test 80 Pulse test 9 30 Drain current ID (A) Drain current ID (A) Common source ID – VDS 100 8.5 20 8 7.5 10 12 15 11 60 10 40 9 8 20 VGS = 7 V VGS = 7 V 0 0 2 4 6 Drain-source voltage 8 0 0 10 VDS (V) 4 8 12 16 Drain-source voltage ID – VGS VDS (V) VDS – VGS 50 5 Common source Common source Pulse test 30 Drain-source voltage Drain current ID (A) VDS (V) VDS = 10 V 40 Tc = −55°C 20 100 10 25 0 0 4 8 Tc = 25°C 4 Pulse test 3 ID = 20 A 2 10 1 5 12 Gate-source voltage 16 0 0 20 VGS (V) 4 8 ⎪Yfs⎪ – ID 16 20 VGS (V) RDS (ON) – ID 1 VDS = 10 V Common source Tc = 25°C Pulse test Pulse test Drain-source on resistance RDS (ON) (mΩ) Common source (S) 12 Gate-source voltage 100 Forward transfer admittance ⎪Yfs⎪ 20 10 Tc = −55°C 100 25 1 0.1 0.1 1 10 0.1 15 0.01 1 100 Drain current ID (A) VGS = 10 V 10 100 Drain current ID (A) 3 2006-11-21 2SK3445 IDR – VDS Common source VGS = 10 V Pulse test Common source Tc = 25°C (A) 10 5 0.18 ID = 20 A 0.12 0.06 Pulse test 100 10 VGS = 0 V 10 5 −40 0 40 80 120 1 0 160 3 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −1.8 −2.0 Case temperature Tc (°C) Drain-source voltage Capacitance – VDS Vth – Tc 30000 6 Ciss Gate threshold voltage Capacitance C (pF) Vth (V) 10000 1000 100 Coss Common source VGS = 0 V f = 1 MHz Tc = 25°C 10 0.1 Crss 1 10 100 Drain-source voltage 1000 5 4 3 2 Common source 1 V DS = 10 V ID = 1 mA Pulse test 0 −80 −40 0 PD – Tc 80 VDS (V) 160 120 80 40 40 80 120 120 160 Dynamic input/output characteristics 250 Drain-source voltage Drain power dissipation PD (W) 40 Case temperature Tc (°C) VDS (V) 200 10 0 VDS (V) 160 200 Case temperature Tc (°C) VDS 150 20 16 12 VDD = 200 V 50 V 100 V 100 8 VGS 4 50 0 0 200 Common source ID = 20 A Tc = 25°C Pulse test 20 40 60 80 VGS (V) 0 −80 Gate-source voltage 0.24 1000 Drain reverse current IDR Drain-source on resistance RDS (ON) (mΩ) RDS (ON) – Tc 0.3 0 100 Total gate charge Qg (nC) 4 2006-11-21 2SK3445 rth – tw Normalized transient thermal impedance rth (t)/Rth (ch-c) 10 1 Duty = 0.5 0.2 PDM 0.1 0.1 t 0.05 0.02 0.01 T Duty = t/T Rth (ch-c) = 1.0°C/W Single pulse 0.01 10 μ 100 μ 1m 10 m Pulse width 100 m tw 1 (S) Safe operating area EAS – Tch 100 500 ID max (pulsed) * Avalanche energy EAS (mJ) 100 μs* Drain current ID (A) 1 ms* ID max 10 (continuous) DC operation Tc = 25°C 1 10 * Single nonrepetitive pulse Tc = 25°C 400 300 200 100 Curves must be derated linearly with increase in temperature. 0.1 1 10 Drain-source voltage 0 25 VDSS max 100 50 75 100 125 150 Channel temperature (initial) Tch (°C) 1000 VDS (V) 15 V BVDSS IAR −15 V VDD Test circuit RG = 25 Ω VDD = 50 V, L = 2.06 mH 5 VDS Waveform Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ 2 − ⎝ VDSS VDD ⎠ 2006-11-21 2SK3445 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-21