MP4006 TOSHIBA Power Transistor Module Silicon NPN&PNP Epitaxial Type (Darlington power transistor 4 in 1) MP4006 Industrial Applications High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. · Small package by full molding (SIP 10 pin) · High collector power dissipation (4 devices operation) · High DC current gain: hFE = 2000 (min) (VCE = ±2 V, IC = ±1 A) Unit: mm : IC (DC) = ±2 A (max) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating NPN PNP Unit Collector-base voltage VCBO 80 −80 V Collector-emitter voltage VCEO 80 −80 V Emitter-base voltage VEBO 8 −8 V DC IC 2 −2 Pulse ICP 3 −3 IB 0.5 −0.5 Collector current Continuous base current Collector power dissipation (1 device operation) Collector power dissipation (4 devices operation) Junction temperature Storage temperature range A JEDEC ― JEITA ― A TOSHIBA Weight: 2.1 g (typ.) PC 2.0 W PT 4.0 W Tj 150 °C Tstg −55 to 150 °C 2-25A1B Array Configuration R1 R2 10 6 8 7 9 3 5 2 4 R1 R2 1 R1 ≈ 4 kΩ R2 ≈ 800 Ω 1 2002-11-20 MP4006 Thermal Characteristics Characteristics Thermal resistance of junction to ambient Symbol Max Unit ΣRth (j-a) 31.3 °C/W TL 260 °C (4 devices operation, Ta = 25°C) Maximum lead temperature for soldering purposes (3.2 mm from case for 10 s) Electrical Characteristics (Ta = 25°C) (NPN transistor) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 80 V, IE = 0 A ― ― 10 µA Collector cut-off current ICEO VCE = 80 V, IB = 0 A ― ― 10 µA Emitter cut-off current IEBO VEB = 8 V, IC = 0 A 0.8 ― 4.0 mA Collector-base breakdown voltage V (BR) CBO IC = 1 mA, IE = 0 A 80 ― ― V Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 A 80 ― ― V hFE VCE = 2 V, IC = 1 A 2000 ― ― ― Collector-emitter VCE (sat) IC = 1 A, IB = 1 mA ― ― 1.5 Base-emitter VBE (sat) IC = 1 A, IB = 1 mA ― ― 2.0 VCE = 2 V, IC = 0.5 A ― 100 ― MHz VCB = 10 V, IE = 0 A, f = 1 MHz ― 20 ― pF ― 0.4 ― ― 4.0 ― ― 0.6 ― Saturation voltage Transition frequency Collector output capacitance Turn-on time fT Cob ton Input 20 µs Storage time IB2 tstg IB2 IB1 Switching time Fall time IB1 Output 30 Ω DC current gain V µs VCC = 30 V tf IB1 = −IB2 = 1 mA, duty cycle ≤ 1% 2 2002-11-20 MP4006 Electrical Characteristics (Ta = 25°C) (PNP transistor) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = −80 V, IE = 0 A ― ― −10 µA Collector cut-off current ICEO VCE = −80 V, IB = 0 A ― ― −10 µA Emitter cut-off current IEBO VEB = −8 V, IC = 0 A −0.8 ― −4.0 mA Collector-base breakdown voltage V (BR) CBO IC = −1 mA, IE = 0 A −80 ― ― V Collector-emitter breakdown voltage V (BR) CEO IC = −10 mA, IB = 0 A −80 ― ― V hFE VCE = −2 V, IC = −1 A 2000 ― ― ― Collector-emitter VCE (sat) IC = −1 A, IB = −1 mA ― ― −1.5 Base-emitter VBE (sat) IC = −1 A, IB = −1 mA ― ― −2.0 VCE = −2 V, IC = −0.5 A ― 50 ― MHz VCB = −10 V, IE = 0 A, f = 1 MHz ― 30 ― pF ― 0.4 ― ― 2.0 ― ― 0.4 ― Transition frequency Collector output capacitance Cob ton IB1 Turn-on time fT Switching time Storage time tstg Input 20 µs IB2 Output 30 Ω Saturation voltage IB2 DC current gain IB1 V µs VCC = −30 V Fall time tf −IB1 = IB2 = 1 mA, duty cycle ≤ 1% 3 2002-11-20 MP4006 (NPN transistor) IC – VCE IC – VBE 3.2 3.2 0.5 2 (A) 0.23 IC 1.6 0.21 0.2 IB = 0.19 mA 0.8 2.4 Collector current (A) VCE = 2 V Ta = 25°C 2.4 IC Collector current Common emitter Common emitter 0.3 1.6 0.8 0 0 0 2 4 6 8 Collector-emitter voltage VCE 0 0 10 0.8 (V) −55 25 Ta = 100°C 1.6 2.4 3.2 Base-emitter voltage VBE hFE – IC 2.4 Common emitter (V) Common emitter VCE −55 25 Collector-emitter voltage Ta = 100°C 1000 500 300 100 0.03 0.05 0.1 0.3 0.5 Collector current 1 3 IC 5 10 Ta = 25°C 2.0 1.6 2.0 2.5 IC = 3 A 1.5 1.2 1 0.5 0.8 0.1 0.4 ) hFE DC current gain VCE = 2 V 3000 0 0.1 (A) 1 10 Base current VCE (sat) – IC 3 1 0.3 Common emitter IC/IB = 500 Ta = −55°C 100 0.3 500 (mA) VBE (sat) – IC 25 0.5 100 IB 5 Base-emitter saturation voltage VBE (sat) (V) Collector-emitter saturation voltage VCE (sat) (V) 5 (V) VCE – IB 10000 5000 4.0 0.5 Collector current 1 IC 3 Ta = −55°C 25 1 0.5 0.3 0.1 3 (A) 100 Common emitter IC/IB = 500 0.3 0.5 Collector current 4 1 IC 3 (A) 2002-11-20 MP4006 (PNP transistor) IC – VCE IC – VBE −3.2 −3.2 −1 −0.4 Common emitter Common emitter VCE = −2 V (A) −2.4 −0.25 Collector current Collector current −2.4 IC −0.3 IC (A) Ta = 25°C −1.6 −0.2 −0.8 0 0 IB = −0.17 mA −1.6 0 −2 −4 −6 Collector-emitter voltage −8 VCE Ta = 100°C −0.8 0 0 −10 25 −0.8 (V) −55 −1.6 hFE – IC (V) VCE Collector-emitter voltage 25 1000 −55 500 300 −0.3 −0.5 −0.1 Common emitter Collector current −1 IC −3 −5 −10 Ta = 25°C −2.0 −1.6 −2.0 −2.5 −1.0 −0.8 −0.1 −0.4 −0.5 0 −0.1 (A) −1 −10 Base current VCE (sat) – IC −0.3 −0.1 Base-emitter saturation voltage VBE (sat) (V) Collector-emitter saturation voltage VCE (sat) (V) −100 −500 (mA) VBE (sat) – IC Common emitter IC/IB = 500 Ta = −55°C 100 −0.3 IB −5 25 −0.5 IC = −3 A −1.5 −1.2 ) hFE DC current gain Ta = 100°C −1 (V) VCE – IB 3000 −3 −4.0 −2.4 Common emitter 5000 V CE = −2 V −5 −3.2 Base-emitter voltage VBE 10000 100 −0.03 −2.4 −0.5 Collector current −1 IC −3 Ta = −55°C 25 −1 −0.5 −0.3 −0.1 −3 (A) 100 Common emitter IC/IB = 500 −0.3 −0.5 Collector current 5 −1 IC −3 (A) 2002-11-20 MP4006 rth – tw Curves should be applied in thermal Transient thermal resistance rth (°C/W) 100 30 (4) limited area (single nonrepetitive pulse) Below figure show thermal resistance per 1 unit versus pulse width. (3) (1) (2) 10 3 -No heat sink and attached on a circuit board(1) 1 device operation (2) 2 devices operation (3) 3 devices operation Circuit board (4) 4 devices operation NPN PNP 1 0.5 0.001 0.01 0.1 1 10 Pulse width tw 1000 100 (s) PT – Ta Safe Operating Area (NPN Tr) (1) 1 device operation (2) 2 devices operation (3) 3 devices operation (4) 4 devices operation Attached on a circuit board IC max (pulsed)* (W) 3 8 100 µs* PT 10 ms* 1 1 ms* Total power dissipation Transient thermal resistance rth (°C/W) 5 0.5 0.3 0.1 0.05 0.03 1 *: Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature. 3 5 10 VCEO max 30 50 Collector-emitter voltage VCE 100 6 4 Circuit board (3) (2) 2 (1) 0 0 300 (4) (V) 40 −1 200 (°C) 100 µs* Junction temperature increase ∆Tj (°C/W) rth Transient thermal resistance 10 ms* 1 ms* −0.5 −0.3 −0.03 −1 160 160 I max (pulsed)* −3 C −0.05 120 ∆Tj – PT Safe Operating Area (NPN Tr) −5 −0.1 80 Ambient temperature Ta (°C) *: Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature. −3 −5 −10 VCEO max −30 −50 Collector-emitter voltage VCE −100 (1) (V) (3) Circuit board Attached on a circuit board 40 (1) 1 device operation (2) 2 devices operation (3) 3 devices operation (4) 4 devices operation 1 2 3 Total power dissipation 6 (4) 80 0 0 −300 (2) 120 4 PT 5 (W) 2002-11-20 MP4006 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 7 2002-11-20