MP4208 Silicon P Channel MOS Type (Four L2-π-MOSV in One) TOSHIBA Power MOS FET Module MP4208 Industrial Applications High Power High Speed Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching • • • • • • Unit: mm −4 V gate drive available Small package by full molding (SIP 10 pin) High drain power dissipation (4-device operation) : PT = 4 W (Ta = 25°C) Low drain-source ON resistance: RDS (ON) = 0.2 Ω (typ.) Low leakage current: IGSS = ±10 μA (max) (VGS = ±16 V) IDSS = −100 μA (max) (VDS = −60 V) Enhancement-mode: Vth = −0.8 to −2.0 V (ID = −1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS −60 V Gate-source voltage VGSS ±20 V Drain current ID −5 A Peak drain current IDP −10 A Drain power dissipation (1-device operation, Ta = 25°C) PD 2.0 W TOSHIBA Drain power dissipation (4-device operation, Ta = 25°C) PDT 4.0 W Weight: 2.1 g (typ.) Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C JEDEC ― JEITA ― 2-25A1D Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Array Configuration 1 10 2 4 3 6 5 8 7 9 Marking MP4208 JAPAN Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 1 2006-10-27 MP4208 Thermal Characteristics Characteristics Thermal resistance from channel to ambient Symbol Max Unit ΣRth (ch-a) 31.3 °C/W TL 260 °C (4-device operation, Ta = 25°C) Maximum lead temperature for soldering purposes (3.2 mm from case for 10 s) This transistor is an electrostatic-sensitive device. Please handle withccaution. Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ― ― ±10 μA Drain cut-off current IDSS VDS = −60 V, VGS = 0 V ― ― −100 μA V (BR) DSS ID = −10 mA, VGS = 0 V −60 ― ― V Gate threshold voltage Vth VDS = −10 V, ID = −1 mA −0.8 ― −2.0 V Forward transfer admittance |Yfs| VDS = −10 V, ID = −2.5 A 1 3 ― S RDS (ON) ID = −2.5 A, VGS = −4 V ― 0.3 0.5 RDS (ON) ID = −2.5 A, VGS = −10 V ― 0.2 0.3 Drain-source breakdown voltage Drain-source ON resistance Ω Input capacitance Ciss VDS = −10 V, VGS = 0 V, f = 1 MHz ― 630 ― pF Reverse transfer capacitance Crss VDS = −10 V, VGS = 0 V, f = 1 MHz ― 95 ― pF Output capacitance Coss VDS = −10 V, VGS = 0 V, f = 1 MHz ― 290 ― pF ― 25 ― ― 45 ― Rise time tr ID = −2.5 A 0V ton VGS −10 V Fall time Turn-off time Total gate charge (gate-source plus gate-drain) 50 Ω Switching time tf toff RL = 12 Ω Turn-on time VOUT Qgs Gate-drain (“miller”) charge Qgd ― 55 ― ― 200 ― ― 22 ― nC ― 16 ― nC ― 6 ― nC VDD ≈ −30 V VIN: tr, tf < 5 ns, duty ≤ 1%, tw = 10 μs Qg Gate-source charge ns ID = −5 A, VGS = −10 V, VDD ≈ 48 V Source-Drain Diode Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Drain reverse current IDR ― ― ― −5 A Peak drain reverse current IDRP ― ― ― −10 A Diode forward voltage VDSF IDR = −5 A, VGS = 0 V ― 1.0 2.0 V Reverse recovery time trr IDR = −5 A, VGS = 0 V ― 80 ― ns Reverse recovery charge Qrr dIDR/dt = −50 A/μs ― 0.1 ― μC 2 2006-10-27 MP4208 ID – VDS ID – VDS −5 −10 −10 Common source Tc = 25°C −6 −4 −8 Drain current ID (A) −3.5 −10 Drain current ID (A) −6 Common source −4 −8 −3 −3 −2 −2.5 −1 Tc = 25°C −4 −8 −6 −3.5 −4 −3 −2 −2.5 VGS = −2 V 0 0 −0.4 −0.8 −1.2 Drain-source voltage −1.6 VGS = −2 V 0 0 −2 −2 VDS (V) −4 Drain-source voltage ID – VGS VDS = −10 V Drain current ID (A) 25 −6 −4 Tc = 25°C 1 0.5 0.3 VGS = −4 V −10 0.1 0.05 −0.1 −2 −0.3 −1 −3 −10 −30 Drain current ID (A) −2 −4 −6 Gate-source voltage VGS (V) − −10 VDS – VGS RDS (ON) – Tc (Ω) −2.0 Common source Tc = 25°C Drain-source on resistance RDS (ON) VDS (V) VDS (V) Common source Drain-source on resistance RDS (ON) (Ω) Common source 100 −8 −1.6 −1.2 −0.8 ID = −5 A −4 −3 −0.4 −2 −1 ) Drain-source voltage −10 RDS (ON) – ID Tc = −55°C 0 0 −8 3 −10 0 0 −6 −4 −8 −12 Gate-source voltage −16 1 Common source 0.8 0.6 0.2 VGS (V) −2.5 −1.2 VGS = −4 V ID = −5, −2.5, −1.2 A VGS = −10 V 0 −80 −20 ID = −5 A 0.4 −40 0 40 80 120 160 Case temperature 3 2006-10-27 MP4208 Vth – Tc |Yfs| – ID |Yfs| (S) −1.6 Forward transfer admittance Gate threshold voltage Vth (V) −2.0 −1.2 −0.8 Common source −0.4 VDS = −10 V ID = −1 mA 0 −80 −40 0 40 80 120 30 Common source VDS = −10 V 10 Tc = −55°C 5 100 3 25 1 0.5 0.3 −0.1 −0.3 −1 −3 −10 −30 Drain current ID (A) 160 Case temperature Tc (°C) Dynamic Input/Output Characteristics VDS −30 −12 V VDD = −48 V −24 V −20 −10 −8 −4 VGS 0 0 8 −12 16 24 32 (pF) −16 Capacitance C −40 3000 VGS (V) Common source ID = −5 A Tc = 25°C Capacitance – VDS 5000 −20 Gate-source voltage Drain-source voltage VDS (V) −50 1000 Ciss 500 300 Coss Common source 100 50 VGS = 0 V Crss f = 1 MHz Tc = 25°C 30 −0.1 −0.3 −1 −3 Drain-source voltage 0 40 −10 −30 −100 VDS (V) Total gate charge Qg (nC) IDR – VDSF −30 Drain reverse current IDR (A) Common source −10 Tc = 25°C −5 −3 −1 −0.5 −10 −3 −1 −0.3 −0.1 0 0.4 VGS = 0, 1 V 0.8 1.2 1.6 2.0 Diode forward voltage VDSF (V) 4 2006-10-27 MP4208 Transient thermal resistance rth (°C/W) rth – tw 300 100 Curves should be applied in thermal limited area. (Single nonrepetitive pulse) The figure shows thermal resistance per device versus pulse width. (4) (1) 30 (3) (2) 10 -No heat sink/Attached on a circuit board(1) 1-device operation (2) 2-device operation (3) 3-device operation Circuit board (4) 4-device operation 3 1 0.5 0.001 0.01 0.1 1 Pulse width 10 100 1000 tw (s) Safe Operating Area PT – Ta −20 −5 ID max 1 ms* PT (W) 10 μs* IDP max Total power dissipation −10 8 100 μs* 10 ms* 100 ms* −1 6 4 (4) Circuit board (3) (2) 2 (1) 0 0 −0.5 40 80 120 160 200 Ambient temperature Ta (°C) −0.3 VDSS max *: Single nonrepetitive pulse −0.1 Ta = 25°C Curves must be derated linearly with increase in temperature. −0.05 −3 −5 −10 Drain-source voltage −30 −50 −100 ΔTj – PT VDS (V) 160 Junction temperature increase ΔTj (°C) Drain current ID (A) −3 (1) 1-device operation (2) 2-device operation (3) 3-device operation (4) 4-device operation Attached on a circuit board (1) (2) (3) 80 Circuit board Attached on a circuit board 40 0 0 (1) 1-device operation (2) 2-device operation (3) 3-device operation (4) 4-device operation 1 2 3 Total power dissipation 5 (4) 120 4 PT 5 (W) 2006-10-27 MP4208 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-10-27