2SC5886 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm · High DC current gain: hFE = 400 to 1000 (IC = 0.5 A) · Low collector-emitter saturation: VCE (sat) = 0.22 V (max) · High-speed switching: tf = 55 ns (typ.) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit VCBO 100 V VCEX 80 VCEO 50 VEBO 7 DC IC 5 Pulse ICP 10 IB 0.5 Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Ta = 25°C Collector power dissipation Tc = 25°C Junction temperature Storage temperature range V V A A 1 Pc W 20 Tj 150 °C Tstg -55 to 150 °C JEDEC ― JEITA SC-64 TOSHIBA 2-7J1A Weight: 0.36 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 100 V, IE = 0 ¾ ¾ 100 nA Emitter cut-off current IEBO VEB = 7 V, IC = 0 ¾ ¾ 100 nA V (BR) CEO IC = 10 mA, IB = 0 50 ¾ ¾ V hFE (1) VCE = 2 V, IC = 0.5 A 400 ¾ 1000 hFE (2) VCE = 2 V, IC = 1.6 A 200 ¾ ¾ Collector-emitter saturation voltage VCE (sat) IC = 1.6 A, IB = 32 mA ¾ ¾ 0.22 V Base-emitter saturation voltage VBE (sat) IC = 1.6 A, IB = 32 mA ¾ ¾ 1.10 V ¾ 63 ¾ ¾ 560 ¾ ¾ 55 ¾ Collector-emitter brakedown voltage DC current gain Rise time Switching time Storage time Fall time tr tstg tf See Figure 1 circuit diagram VCC ~ - 24 V, RL = 15 W IB1 = 32 mA, IB2 = -53 mA 1 ns 2002-08-21 2SC5886 VCC IB1 IB1 Input RL 20 ms Output IB2 IB2 Duty cycle < 1% Figure 1 Switching Time Test Circuit & Timing Chart Marking C5886 Product No. Lot No. Explanation of Lot No. Month of manufacture: January to December are denoted by letters A to L respectively. Year of manufacture: last decimal digit of the year of manufacture 2 2002-08-21 2SC5886 IC – VCE hFE – IC 6 30000 Common emitter 70 mA 50 mA 30 mA Tc = 25°C 10000 hFE 10 mA 4 DC current gain Collector current IC (A) 20 mA 5 mA 2 IB = 1 mA 4 6 Collector-emitter voltage VCE 1000 Tc = 100°C 500 300 25°C -55°C 100 10 0.001 0.003 0 2 5000 3000 50 30 2 mA 0 0 Common emitter VCE = 2 V 8 0.01 (V) VCE (sat) – IC 1 10 0.5 0.3 0.1 25°C 0.05 0.03 Tc = 100°C -55°C 0.01 0.005 0.003 0.001 0.001 0.003 0.01 0.03 0.1 0.3 1 IC (A) Collector current 3 1 IC (A) 3 10 3 10 1 3 5 3 1 Tc = -55°C 0.5 0.3 25°C 100°C 0.1 0.05 0.03 0.01 0.03 0.1 0.3 1 IC (A) Collector current IC – VBE VCE – IB 10 Collector-emitter saturation voltage VCE (V) Common emitter IC (A) VCE = 2 V Collector current 0.3 Common emitter IC/IB = 50 0.01 0.001 0.003 10 2 1 Tc = 100°C -55°C 25°C 0 0 0.1 VBE (sat) – IC 30 Common emitter IC/IB = 50 Base-emitter saturation voltage VBE (sat) (V) Collector emitter saturation voltage VCE (sat) (V) 3 0.03 Collector current 0.5 1 Base-emitter voltage VBE Common emitter 5 Tc = 25°C 3 1 0.3 (V) 2A 0.1 0.05 1A 0.03 0.01 0.001 1.5 IC = 2.5 A 0.5 0.003 0.01 0.03 Base current 3 0.1 IB 0.3 (A) 2002-08-21 2SC5886 Transient thermal resistance (junction- case) rth (j-c) (°C/W) rth (j-c) – tw 50 30 10 5 3 Tc = 25°C Infinite heat sink Curves should be applied in 1 thermal limited area. (single nonrepetitive pulse) 0.5 0.001 0.003 0.01 0.03 0.1 Pulse width 0.3 tw 1 3 10 (s) Safe Operation Area 100 50 30 Collector current IC 3 10 ms* IC max (continuous) 1 ms* 1 DC OPERATION (Tc = 25°C) 0.5 0.3 10 ms* 100 ms* 0.1 0.05 0.03 VCEO max (A) 5 100 ms* IC max (pulsed) * 10 *: Single pulse Tc = 25°C Curves must be derated linealy with increase in temperature 0.01 0.1 1 Collector-emitter voltage 10 VCEO 100 (V) 4 2002-08-21 2SC5886 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 5 2002-08-21 This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.