TOSHIBA SSM3K15TE

SSM3K15TE
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K15TE
High Speed Switching Applications
Analog Switch Applications
Unit: mm
1.2±0.05
: Ron = 4.0 Ω (max) (@VGS = 4 V)
: Ron = 7.0 Ω (max) (@VGS = 2.5 V)
Characteristics
2
Symbol
Rating
Unit
Drain-source voltage
VDS
30
V
Gate-source voltage
VGSS
±20
V
DC
ID
100
Pulse
IDP
200
Drain power dissipation (Ta = 25°C)
PD
100
mW
Channel temperature
Tch
150
°C
JEDEC
-
Storage temperature
Tstg
−55~150
°C
JEITA
-
Drain current
Note:
mA
TESM
0.32±0.05
3
0.59±0.05
Absolute Maximum Ratings (Ta = 25°C)
1
0.14±0.05
Low on resistance
0.9±0.1
Small package
•
0.45 0.45
•
1.4±0.05
0.8±0.05
1. Gate
2. Source
3. Drain
TOSHIBA
2-1B1B
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
Weight: 0.0022 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
Equivalent Circuit
3
3
DP
1
2
1
2
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
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SSM3K15TE
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Gate leakage current
Drain-source breakdown voltage
Drain cut-off current
Test Condition
Min
Typ.
Max
Unit
IGSS
VGS = ±16 V, VDS = 0
⎯
⎯
±1
μA
V (BR) DSS
ID = 0.1 mA, VGS = 0
30
⎯
⎯
V
IDSS
VDS = 30 V, VGS = 0
⎯
⎯
1
μA
Vth
VDS = 3 V, ID = 0.1 mA
0.8
⎯
1.5
V
Forward transfer admittance
⏐Yfs⏐
VDS = 3 V, ID = 10 mA
25
⎯
⎯
mS
Drain-source ON resistance
RDS (ON)
ID = 10 mA, VGS = 4 V
⎯
2.2
4.0
ID = 10 mA, VGS = 2.5 V
⎯
4.0
7.0
Gate threshold voltage
Ω
Input capacitance
Ciss
VDS = 3 V, VGS = 0, f = 1 MHz
⎯
7.8
⎯
pF
Reverse transfer capacitance
Crss
VDS = 3 V, VGS = 0, f = 1 MHz
⎯
3.6
⎯
pF
Output capacitance
Coss
VDS = 3 V, VGS = 0, f = 1 MHz
⎯
8.8
⎯
pF
VDD = 5 V, ID = 10 mA,
VGS = 0~5 V
⎯
50
⎯
⎯
180
⎯
Switching time
Turn-on time
ton
Turn-off time
toff
ns
Switching Time Test Circuit
(a) Test circuit
5V
(b) VIN
Output
5V
RL
0V
90%
Input
50 Ω
0
10 μs
VDD
(c) VOUT
VDD = 5 V
D.U. <
= 1%
Input: tr, tf < 5 ns
(Zout = 50 Ω)
Common Source
Ta = 25°C
10%
VDD
10%
90%
VDS (ON)
tr
ton
tf
toff
Precaution
Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 μA for this
product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower
voltage than Vth.
(relationship can be established as follows: VGS (off) < Vth < VGS (on) )
Please take this into consideration for using the device.
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SSM3K15TE
ID – VDS
ID – VGS
250
1000
Common Source
4
Common Source
Ta = 25°C
3
VDS = 3 V
100
Drain current ID (mA)
Drain current ID (mA)
200
10
2.7
150
2.5
100
2.3
50
Ta = 100°C
10
−25°C
25°C
1
0.1
VGS = 2.1 V
0
0
0.5
1
1.5
Drain-Source voltage
0.01
0
2
1
VDS (V)
2
3
Gate-Source voltage
RDS (ON) – ID
VGS (V)
RDS (ON) – VGS
10
6
Common Source
Common Source
ID = 10 mA
5
8
Drain-Source on resistance
RDS (ON) (Ω)
Drain-Source on resistance
RDS (ON) (Ω)
Ta = 25°C
6
VGS = 2.5 V
4
4V
2
4
Ta = 100°C
3
25°C
2
−25°C
1
0
0
40
80
120
160
0
0
200
2
Drain current ID (mA)
4
Common Source
ID = 10 mA
Vth (V)
1.8
6
5
VGS = 2.5 V
4
3
4V
2
1
0
−25
8
10
VGS (V)
Vth – Ta
2
Gate threshold voltage
Drain-Source on resistance
RDS (ON) (Ω)
7
6
Gate-source voltage
RDS (ON) – Ta
8
4
1.6
Common Source
ID = 0.1 mA
VDS = 3 V
1.4
1.2
1
0.8
0.6
0.4
0.2
0
25
50
75
100
125
0
−25
150
Ambient temperature Ta (°C)
0
25
50
75
100
125
150
Ambient temperature Ta (°C)
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⎪Yfs⎪ – ID
IDR – VDS
1000
250
(mA)
Drain reveres current IDR
Forward transfer admittance
⏐Yfs⏐ (mS)
Common Source
500 V
DS = 3 V
300 Ta = 25°C
100
50
30
10
5
3
1
1
10
100
200
Common Source
VGS = 0 V
Ta = 25°C
D
150
S
100
50
0
0
1000
IDR
G
−0.2
Drain current ID (mA)
−0.4
−0.6
Drain-Source voltage
t – ID
toff
3000
tf
500
300
100
10
0.1
ton
toff
1000
500
tf
300
ton
100
tr
50
30
tr
1
10
10
0.1
100
1
Drain current ID (mA)
10
PD – Ta
Drain power dissipation PD (mW)
(pF)
30
Capacitance C
250
Common Source
VGS = 0 V
f = 1 MHz
Ta = 25°C
50
10
Ciss
Coss
5
3
Crss
1
0.5
0.3
1
Drain-Source voltage
100
Drain current ID (mA)
C – VDS
100
0.1
0.1
−1.4
Common Source
VDD = 3 V
VGS = 0~2.5 V
Ta = 25°C
5000
Switching time t (ns)
Switching time t (ns)
3000
30
−1.2
VDS (V)
10000
Common Source
VDD = 5 V
VGS = 0~5 V
Ta = 25°C
5000
50
−1
t – ID
10000
1000
−0.8
10
200
150
100
50
0
0
100
VDS (V)
20
40
60
80
100
120
140
160
Ambient temperature Ta (°C)
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SSM3K15TE
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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