SSM3K15FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K15FV High Speed Switching Applications Analog Switch Applications 0.22±0.05 Unit: mm • Low on-resistance 1.2±0.05 0.32±0.05 Optimum for high-density mounting in small packages 0.8±0.05 Symbol Rating Unit Drain-source voltage VDS 30 V Gate-source voltage VGSS ±20 V DC ID 100 Pulse IDP 200 Drain current Drain power dissipation (Ta = 25°C) PD (Note 1) mA 150 mW Channel temperature Tch 150 °C Storage temperature Tstg −55~150 °C 0.4 2 0.13±0.05 Characteristics 3 0.5±0.05 Absolute Maximum Ratings (Ta = 25°C) 1 0.4 1.2±0.05 : Ron = 7.0 Ω (max) (@VGS = 2.5 V) 0.8±0.05 : Ron = 4.0 Ω (max) (@VGS = 4 V) VESM 1. Gate 2. Source 3. Drain Note: Using continuously under heavy loads (e.g. the application of JEDEC high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEITA reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the TOSHIBA 2-1L1B absolute maximum ratings. Weight: 0.0015 g (typ.) Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating, mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t) 0.5mm 0.45mm 0.45mm 0.4mm Marking Equivalent Circuit 3 3 DP 1 2 1 2 Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 1 2007-11-01 SSM3K15FV Electrical Characteristics (Ta = 25°C) Characteristics Symbol Gate leakage current Drain-source breakdown voltage Drain cut-off current Test Condition Min Typ. Max Unit IGSS VGS = ±16 V, VDS = 0 ⎯ ⎯ ±1 μA V (BR) DSS ID = 0.1 mA, VGS = 0 30 ⎯ ⎯ V IDSS VDS = 30 V, VGS = 0 ⎯ ⎯ 1 μA Vth VDS = 3 V, ID = 0.1 mA 0.8 ⎯ 1.5 V Forward transfer admittance ⏐Yfs⏐ VDS = 3 V, ID = 10 mA 25 ⎯ ⎯ mS Drain-Source on-resistance RDS (ON) ID = 10 mA, VGS = 4 V ⎯ 2.2 4.0 ID = 10 mA, VGS = 2.5 V ⎯ 4.0 7.0 Gate threshold voltage Ω Input capacitance Ciss VDS = 3 V, VGS = 0, f = 1 MHz ⎯ 7.8 ⎯ pF Reverse transfer capacitance Crss VDS = 3 V, VGS = 0, f = 1 MHz ⎯ 3.6 ⎯ pF Output capacitance Coss VDS = 3 V, VGS = 0, f = 1 MHz ⎯ 8.8 ⎯ pF VDD = 5 V, ID = 10 mA, VGS = 0~5 V ⎯ 50 ⎯ ⎯ 180 ⎯ Switching time Turn-on time ton Turn-off time toff ns Switching Time Test Circuit (a) Test circuit 5V (b) VIN Output 5V RL 0V 90% Input 50 Ω 0 10 μs VDD (c) VOUT VDD = 5 V D.U. < = 1% Input: tr, tf < 5 ns (Zout = 50 Ω) Common Source Ta = 25°C 10% VDD 10% 90% VDS (ON) tr ton tf toff Precaution Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 100 μA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on) ) Please take this into consideration when using the device. 2 2007-11-01 SSM3K15FV ID – VDS ID – VGS 250 1000 Common Source 4 Common Source Ta = 25°C 3 VDS = 3 V 100 Drain current ID (mA) Drain current ID (mA) 200 10 2.7 150 2.5 100 2.3 50 Ta = 100°C 10 −25°C 25°C 1 0.1 VGS = 2.1 V 0 0 0.5 1 1.5 Drain-Source voltage 0.01 0 2 1 VDS (V) 2 3 Gate-Source voltage RDS (ON) – ID VGS (V) RDS (ON) – VGS 10 6 Common Source Common Source ID = 10 mA 5 8 Drain-Source on resistance RDS (ON) (Ω) Drain-Source on resistance RDS (ON) (Ω) Ta = 25°C 6 VGS = 2.5 V 4 4V 2 4 Ta = 100°C 3 25°C 2 −25°C 1 0 0 40 80 120 160 0 0 200 2 Drain current ID (mA) 4 Common Source ID = 10 mA Vth (V) 1.8 6 5 VGS = 2.5 V 4 3 4V 2 1 0 −25 8 10 VGS (V) Vth – Ta 2 Gate threshold voltage Drain-Source on resistance RDS (ON) (Ω) 7 6 Gate-source voltage RDS (ON) – Ta 8 4 1.6 Common Source ID = 0.1 mA VDS = 3 V 1.4 1.2 1 0.8 0.6 0.4 0.2 0 25 50 75 100 125 0 −25 150 Ambient temperature Ta (°C) 0 25 50 75 100 125 150 Ambient temperature Ta (°C) 3 2007-11-01 SSM3K15FV ⎪Yfs⎪ – ID IDR – VDS 1000 250 (mA) Drain reveres current IDR Forward transfer admittance ⏐Yfs⏐ (mS) Common Source 500 V DS = 3 V 300 Ta = 25°C 100 50 30 10 5 3 1 1 10 100 200 Common Source VGS = 0 V Ta = 25°C D 150 S 100 50 0 0 1000 IDR G −0.2 Drain current ID (mA) −0.4 −0.6 Drain-Source voltage t – ID toff 3000 tf 500 300 100 10 0.1 ton toff 1000 500 tf 300 ton 100 tr 50 30 tr 1 10 10 0.1 100 1 Drain current ID (mA) 10 PD – Ta Drain power dissipation PD (mW) (pF) 30 Capacitance C 250 Common Source VGS = 0 V f = 1 MHz Ta = 25°C 50 10 Ciss Coss 5 3 Crss 1 0.5 0.3 1 Drain-Source voltage 100 Drain current ID (mA) C – VDS 100 0.1 0.1 −1.4 Common Source VDD = 3 V VGS = 0~2.5 V Ta = 25°C 5000 Switching time t (ns) Switching time t (ns) 3000 30 −1.2 VDS (V) 10000 Common Source VDD = 5 V VGS = 0~5 V Ta = 25°C 5000 50 −1 t – ID 10000 1000 −0.8 10 200 150 100 50 0 0 100 VDS (V) Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.585 mm2 ) 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) 4 2007-11-01 SSM3K15FV RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2007-11-01