TOSHIBA SSM3J13T_07

SSM3J13T
TOSHIBA Field Effect Transistor
Silicon P Channel MOS Type (U-MOSII)
SSM3J13T
Power Management Switch
High Speed Switching Applications
Unit: mm
•
•
Small Package
Low on Resistance : Ron = 70 mΩ (max) (@VGS = −4 V)
: Ron = 95 mΩ (max) (@VGS = −2.5 V)
•
Low Gate Threshold Voltage
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDS
−12
V
Gate-Source voltage
VGSS
±8
V
ID
−3.0
DC
Drain current
Pulse
Drain power dissipation
IDP
A
−6.0
(Note 2)
PD
(Note 1)
1.25
W
JEDEC
―
―
Channel temperature
Tch
150
°C
JEITA
Storage temperature range
Tstg
−55~150
°C
TOSHIBA
Note:
2-3S1A
Weight: 10 mg (typ.)
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board
2
(25.4 mm × 25.4 mm × 1.6 t, Cu pad: 645 mm , t = 10 s)
Note 2: The pulse width limited by max channel temperature.
Marking
Equivalent Circuit
3
3
KDH
1
2
1
2
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the
environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and
containers and other objects that come into direct contact with devices should be made of anti-static materials.
The Channel-to-Ambient thermal resistance Rth (ch-a) and the drain power dissipation PD vary according to
the board material, board area, board thickness and pad area, and are also affected by the environment in
which the product is used. When using this device, please take heat dissipation fully into account
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SSM3J13T
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Gate leakage current
Drain-Source breakdown voltage
Drain Cut-off current
Test Condition
Typ.
Max
Unit
IGSS
VGS = ±8 V, VDS = 0
⎯
⎯
±1
μA
V (BR) DSS
ID = −1 mA, VGS = 0
−12
⎯
⎯
V
V (BR) DSX
ID = −1 mA, VGS = 8 V
−4
⎯
⎯
V
IDSS
VDS = −12 V, VGS = 0
⎯
⎯
−1
μA
−0.45
⎯
−1.1
V
(Note 3)
3.8
⎯
⎯
S
ID = −1.5 A, VGS = −4 V
(Note 3)
⎯
50
70
ID = −1.5 A, VGS = −2.5 V
(Note 3)
⎯
70
95
ID = −1.5 A, VGS = −2.0 V
(Note 3)
⎯
90
180
Gate threshold voltage
Vth
VDS = −3 V, ID = −0.1 mA
Forward transfer admittance
|Yfs|
VDS = −3 V, ID = −1.5 A
Drain-Source ON resistance
Min
RDS (ON)
mΩ
Input capacitance
Ciss
VDS = −10 V, VGS = 0, f = 1 MHz
⎯
890
⎯
pF
Reverse transfer capacitance
Crss
VDS = −10 V, VGS = 0, f = 1 MHz
⎯
203
⎯
pF
Output capacitance
Coss
VDS = −10 V, VGS = 0, f = 1 MHz
⎯
288
⎯
pF
Switching time
Turn-on time
ton
VDD = −10 V, ID = −1 A
⎯
48
⎯
Turn-off time
toff
VGS = 0~−2.5 V, RG = 4.7 Ω
⎯
120
⎯
ns
Note 3: Pulse test
Switching Time Test Circuit
(a) Test circuit
0
OUT
10 μs
RG
IN
−2.5 V
(b) VIN
VDD = −10 V
RG = 4.7 Ω
D.U. <
= 1%
VIN: tr, tf < 5 ns
COMMON SOURCE
Ta = 25°C
VDD
0V
10%
90%
−2.5 V
VDS (ON)
90%
(c) VOUT
10%
VDD
tr
ton
tf
toff
Precaution
Vth can be expressed as voltage between gate and source when low operating current value is ID = −100 μA
for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off)
requires lower voltage than Vth.
(relationship can be established as follows: VGS (off) < Vth < VGS (on))
Please take this into consideration for using the device.
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SSM3J13T
ID – VDS
−4
ID – VGS
−10000
−4 V
−1000
(mA)
−1.6 V
−1.5 V
Drain current ID
(A)
Drain current ID
Ta = 25°C
−2.0 V
−1.8 V
−3
Common Source
Common Source
−2.5 V
−2
−1.4 V
−1
−0.5
−1
−1.5
Drain-Source voltage
75°C
Ta = 25°C
−100
−25°C
−10
−1
−0.1
VGS = −1.2 V
0
0
VDS = −3 V
−0.01
0
−2
VDS (V)
−0.5
−1
Gate-Source voltage
RDS (ON) –ID
VGS (V)
500
Common Source
Common Source
Ta = 25°C
ID = −1.5 A
Drain-Source on resistance
RDS (ON) (mΩ)
200
150
VGS = −2 V
100
−2.5 V
−4 V
50
0
0
−2
−4
300
200
100
0
0
−6
Ta = 25°C
400
Drain current ID (A)
−2
−4
Gate-Source voltage
−6
VGS (V)
100
Common
Common Source
VDS = −3 V
140 Source
ID = −1.5 A
Forward transfer admittance
|Yfs| (S)
Drain-Source on resistance
RDS (ON) (mΩ)
−8
|Yfs| – ID
RDS (ON) – Ta
160
120
−2
RDS (ON) – VGS
250
Drain-Source on resistance
RDS (ON) (mΩ)
−1.5
VGS = −2 V
100
−2.5 V
80
−4 V
60
40
Ta = 25°C
10
1
20
0
−25
0
25
50
75
100
125
0.1
−0.01
150
Ambient temperature Ta (°C)
−0.1
−1
−10
Drain current ID (A)
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SSM3J13T
Vth – Ta
C – VDS
−1
1400
Common Source
VGS = 0
f = 1 MHz
Ta = 25°C
VDS = −3 V
1200
ID = −0.1 mA
(pF)
−0.8
−0.6
Capacitance C
Gate threshold voltage
Vth (V)
Common Source
−0.4
1000
Ciss
800
600
400
Coss
−0.2
200
0
−25
0
25
50
75
100
125
Crss
0
0
150
4
2
Ambient temperature Ta (°C)
6
Drain-Source voltage
t – ID
12
10
VDS
14
(V)
IDR – VDS
−3
1000
Common Source
300
Drain reverse current IDR (A)
Common Source
VDD = −10 V
VGS = 0∼ −2.5 V
Ta = 25°C
RG = 4.7 Ω
500
Switching time t (ns)
8
toff
100
tf
50
30
ton
VGS = 0
Ta = 25°C
−2
D
G
S
−1
tr
10
−0.01
−0.1
−1
0
0
−10
Drain current ID (A)
0.4
Drain-Source voltage
0.8
VDS
1.2
(V)
PD – Ta
Drain power dissipation PD (W)
1.5
1.25
Mounted on FR4 board
t = 10 s
(25.4 mm × 25.4 mm × 1.6 t,
2
Cu Pad: 645 mm )
1
0.75
DC
0.5
0.25
0
0
25
50
75
100
125
150
Ambient temperature Ta (°C)
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SSM3J13T
Safe operating area
−10
ID max (pulsed)
10 ms*
10 s*
−1
DC
operation
−0.1 Mounted on FR4 board
(25.4 mm × 25.4 mm
× 1.6 t,
2
Cu Pad: 645 mm )
*: Single nonrepetitive
Pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
−0.01
−0.1
VDSS
max
−1
−10
Drain-Source voltage
−100
VDS (V)
rth – tw
1000
Single pulse
Transient thermal impedance rth (°C /W)
Drain current ID (A)
ID max (continuous)
100
Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t,
2
Cu Pad: 645 mm )
10
1
0.1
0.0001
0.001
0.01
0.1
1
Pulse width
5
10
100
1000
tw (s)
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SSM3J13T
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the
appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any
information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO
LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.
• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
document.
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• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
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infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
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FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
• Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
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or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
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