TC7WZ00FU/FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7WZ00FU,TC7WZ00FK 2 Input Nand Gate Features TC7WZ00FU · High output drive: ±24 mA (min) @VCC = 3 V · Super high speed operation: tpd 2.4 ns (typ.) @VCC = 5 V, 50 pF · Operation voltage range: VCC (opr) = 1.65~5.5 V · Latch-up performance: ±500 mA or more · ESD performance: ±200 V or more (JEITA) · Power down protection is provided on all inputs and outputs. · Matches the performance of TC74LCX series when operated at 3.3 V VCC. ±2000 V or more (MIL) TC7WZ00FK Marking SM8 US8 Type name Z 00 Lot No. WZ 00 Weight SSOP8-P-0.65 SSOP8-P-0.50A : 0.02 g (typ.) : 0.01 g (typ.) Maximum Ratings (Ta = 25°C) Characteristics Pin Assignment (top view) Symbol Rating Unit Power supply voltage VCC -0.5~6 V DC input voltage VIN -0.5~6 V 1A 1 8 VCC DC output voltage VOUT -0.5~6 V 1B 2 7 1Y Input diode current IIK -20 mA 6 2B IOK -20 2Y 3 Output diode current mA DC output current IOUT ±50 mA GND 4 5 2A DC VCC/ground current ICC ±50 mA Power dissipation PD 300 (SM8) 200 (US8) mW Storage temperature Tstg -65~150 °C TL 260 °C Lead temperature (10s) 1 2002-01-16 TC7WZ00FU/FK Truth Table Logic Diagram A B Y L L H L H H H L H H H L IN A & OUT Y IN B Recommended Operating Conditions Characteristics Supply voltage Input voltage Output voltage Operating temperature Symbol Rating Unit 1.65~5.5 VCC 1.5~5.5 VIN V (Note 1) 0~5.5 VOUT V 0~5.5 (Note 2) 0~VCC (Note 3) V -40~85 Topr °C 0~20 (VCC = 1.8 V ± 0.15 V, 2.5 V ± 0.2 V) Input rise and fall time dt/dv 0~10 (VCC = 3.3 V ± 0.3 V) ns/V 0~5 (VCC = 5.5 V ± 0.5 V) Note 1: Data retention only Note 2: VCC = 0 V Note 3: High or low state 2 2002-01-16 TC7WZ00FU/FK Electrical Characteristics DC Characteristics Characteristics High level Symbol Ta = 25°C Test Condition VCC (V) Min Typ. Max Min Max 1.65~ 1.95 0.75 ´ VCC ¾ ¾ 0.75 ´ VCC ¾ 2.3~5.5 0.7 ´ VCC ¾ ¾ 0.7 ´ VCC ¾ 1.65~ 1.95 ¾ ¾ 0.25 ´ VCC ¾ 0.25 ´ VCC 2.3~5.5 ¾ ¾ 0.3 ´ VCC ¾ 0.3 ´ VCC 1.65 1.55 1.65 ¾ 1.55 ¾ 2.3 2.2 2.3 ¾ 2.2 ¾ 3.0 2.9 3.0 ¾ 2.9 ¾ 4.5 4.4 4.5 ¾ 4.4 ¾ 1.65 1.29 1.52 ¾ 1.29 ¾ 2.3 1.9 2.15 ¾ 1.9 ¾ IOH = -16 mA 3.0 2.4 2.8 ¾ 2.4 ¾ IOH = -24 mA 3.0 2.3 2.68 ¾ 2.3 ¾ IOH = -32 mA 4.5 3.8 4.2 ¾ 3.8 ¾ 1.65 ¾ 0 0.1 ¾ 0.1 2.3 ¾ 0 0.1 ¾ 0.1 3.0 ¾ 0 0.1 4.5 ¾ 0 0.1 ¾ 0.1 IOL = 4 mA 1.65 ¾ 0.08 0.24 ¾ 0.24 IOL = 8 mA 2.3 ¾ 0.1 0.3 0.3 IOL = 16 mA 3.0 ¾ 0.15 0.4 0.4 IOL = 24 mA 3.0 ¾ 0.22 0.55 0.55 ¾ VIH Input voltage Low level ¾ VIL IOH = -100 mA High level VOH VIN = I = -4 mA VIH or VIL OH IOH = -8 mA Output voltage IOL = 100 mA Low level VOL VIN = VIH Ta = -40~85°C IOL = 32 mA Unit V V 0.1 4.5 ¾ 0.22 0.55 ¾ 0.55 IIN VIN = 5.5 V or GND 0~5.5 ¾ ¾ ±1 ¾ ±10 mA Power off leakage current IOFF VIN or VOUT = 5.5 V 0.0 ¾ ¾ 1 ¾ 10 mA Quiescent supply current ICC VIN = 5.5 V or GND 1.65~5.5 ¾ ¾ 1 ¾ 10 mA Input leakage current 3 2002-01-16 TC7WZ00FU/FK AC Characteristics (unless otherwise specified, Input: tr = tf = 3 ns) Characteristics Propagation delay time Symbol tpLH Ta = 25°C Test Condition CL = 15 pF, RL = 1 MW tpHL CL = 50 pF, RL = 500 W Input capacitance CIN Power dissipation capacitance CPD ¾ Ta = -40~85°C VCC (V) Min Typ. Max Min Max 1.8 ± 0.15 2.0 5.3 9.6 2.0 9.8 2.5 ± 0.2 1.2 3.2 5.3 1.2 5.7 3.3 ± 0.3 0.8 2.4 3.7 0.8 4.0 5.0 ± 0.5 0.5 1.9 2.9 0.5 3.2 3.3 ± 0.3 1.2 3.0 4.6 1.2 4.9 5.0 ± 0.5 0.8 2.4 3.6 0.8 3.9 0~5.5 ¾ 3.0 ¾ ¾ ¾ 3.3 ¾ 22 ¾ ¾ ¾ 5.5 ¾ 32 ¾ ¾ ¾ (Note) Unit ns pF pF Note: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC (opr) = CPD･VCC･fIN + ICC/2 4 2002-01-16 TC7WZ00FU/FK Package Dimensions Weight: 0.02 g (typ.) 5 2002-01-16 TC7WZ00FU/FK Package Dimensions Weight: 0.01 g (typ.) 6 2002-01-16 TC7WZ00FU/FK RESTRICTIONS ON PRODUCT USE 000707EBA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The products described in this document are subject to the foreign exchange and foreign trade laws. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 7 2002-01-16