MICROWAVE POWER GaAs FET TIM1414-18L-252 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES T HIGH POWER T BROAD BAND INTERNALLY MATCHED FET P1dB=42.0dBm at 13.75GHz to 14.5GHz T HIGH GAIN T HERMETICALLY SEALED PACKAGE G1dB=6.0dB at 13.75GHz to 14.5GHz T LOW INTERMODULATION DISTORTION IM3(Min.)=−25dBc at Po=36dBm Single Carrier Level RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB Gain SYMBOL CONDITION P1dB UNIT MIN. TYP. MAX. dBm 41.5 42.0 dB 5.0 6.0 VDS= 9V Compression Point Power Gain at 1dB Gain ( Ta= 25°C ) IDSQ≅4.4A G1dB f = 13.75 – 14.5GHz Compression Point Drain Current IDS1 A 5.5 6.0 Power Added Efficiency ηadd % 24 3rd Order Intermodulation IM3 dBc -25 Distortion Two Tone Test Po= 36.0dBm Drain Current IDS2 (Single Carrier Level) A 5.5 6.0 Channel Temperature Rise ∆Tch VDS X IDS X Rth(c-c) °C 100 UNIT mS MIN. V -0.7 -1.6 -2.3 A 10.0 V -5 °C/W 1.8 2.3 ELECTRICAL CHARACTERISTICS CHARACTERISTICS Transconductance Pinch-off Voltage SYMBOL gm VGSoff Saturated Drain Current IDSS Gate-Source Breakdown Voltage VGSO Thermal Resistance ( Ta= 25°C ) CONDITION VDS= 3V IDS= 4.8A VDS= 3V IDS= 145mA VDS= 3V VGS= 0V IGS= -145µA Rth(c-c) Channel to Case TYP. MAX. 6000 The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Jan. 2004 TIM1414-18L-252 ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C ) CHARACTERISTICS SYMBOL UNIT RATING Drain-Source Voltage VDS V 15 Gate-Source Voltage VGS V -5 Drain Current IDS A 11.5 Total Power Dissipation (Tc= 25 °C) PT W 60.0 Channel Temperature Tch °C 175 Storage Tstg °C -65 to +175 ? Unit in mm ? Gate @ Source A Drain @ A 2.0 MIN. 3.2± ± 0.3 @ 12.9± ± 0.2 4-R3.0 2.0 MIN. PACKAGE OUTLINE (2-11C1B) 0.6± ±0.15 17.0± ±0.3 5.0 MAX. 2.6± ± 0.3 0.2 MAX. 11.0 MAX. 1.7± ± 0.3 +0.1 0.1 -0.05 21.5 MAX. . HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°°C. 2 TIM1414-18L-252 RF PERFORMANCE 41.54 41.96 42 44 41.95 41.57 VDS= 9V IDSQ ≅ 4.4A Pin= 36.5dBm 42 41 40 39 13.5 13.75 14 14.25 14.5 14.75 15 Frequency (GHz) Output power vs. Input power 50 18 f=14.5GHz VDS= 9V IDSQ ≅ 4.4A 45 40 16 14 Po 35 12 30 10 25 8 Ids 20 6 15 4 10 2 15 20 25 30 Pin(dBm) 3 35 40 Ids(A) Pout(dBm) Po (dBm) 43 Output Power vs. Frequency TIM1414-18L-252 Power Dissipation vs. Case Temperature 100 80 60 PT(W) 40 20 0 0 40 80 120 160 200 Tc (°C) IM3 vs. Output Power Characteristics -20 VDS= 9V IDSQ≅ 4.4A f= 14.5GHz ∆f= 5MHz -30 IM3(dBc) -40 -50 -60 30 32 34 36 38 Po(dBm), Single Carrier Level 4 40