MICROWAVE POWER GaAs FET TIM7179-60SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 36.5dBm Single Carrier Level HIGH POWER P1dB=48.0dBm at 7.1GHz to 7.9GHz HIGH GAIN G1dB=6.5dB at 7.1GHz to 7.9GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise ( Ta= 25°C ) SYMBOL P1dB CONDITIONS UNIT dBm MIN. 47.0 G1dB VDS=10V f = 7.1 to 7.9GHz IDSset≅9.5A dB 5.5 6.5 ⎯ A dB % dBc ⎯ ⎯ ⎯ -42 13.2 15.0 ±0.8 A °C ⎯ ⎯ ⎯ ⎯ 11.8 100 UNIT S MIN. MAX. ⎯ TYP. 20 V -1.0 -1.8 -3.0 A ⎯ 38 ⎯ V -5 ⎯ ⎯ °C/W ⎯ 0.6 0.8 IDS1 ΔG ηadd IM3 Two-Tone Test Po=36.5dBm IDS2 ΔTch (Single Carrier Level) (VDS X IDS + Pin – P1dB) TYP. MAX. 48.0 ⎯ ⎯ 37 -45 ⎯ ⎯ X Rth(c-c) Recommended Gate Resistance(Rg) : 28 Ω (Max.) ELECTRICAL CHARACTERISTICS CHARACTERISTICS Transconductance Saturated Drain Current IDSS Gate-Source Breakdown Voltage Thermal Resistance VGSO CONDITIONS VDS= 3V IDS= 12.0A VDS= 3V IDS= 200mA VDS= 3V VGS= 0V IGS= -1.0mA Rth(c-c) Channel to Case Pinch-off Voltage SYMBOL gm ( Ta= 25°C ) VGSoff ⎯ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. Aug. 2008 TIM7179-60SL ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C ) CHARACTERISTICS SYMBOL UNIT RATING Drain-Source Voltage VDS V 15 Gate-Source Voltage VGS V -5 Drain Current IDS A 20 Total Power Dissipation (Tc= 25 °C) PT W 187.5 Channel Temperature Tch °C 175 Storage Temperature Tstg °C -65 to +175 PACKAGE OUTLINE (2-16G1B) Unit in mm c Gate d Source e Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. 2 TIM7179-60SL RF PERFORMANCE Output Power (Pout) vs. Frequency Pout(dBm) VDS=10V IDS≅13.2A Pin=41.5dBm 49 48 47 7.1 7.9 7.5 Frequency(GHz) Output Power(Pout) vs. Input Power(Pin) 51 freq.=7.9GHz 50 VDS=10V 90 IDSset≅9.5A 49 80 Pout 70 47 60 46 50 ηadd 45 40 44 30 43 20 42 35 37 39 41 Pin(dBm) 3 43 45 ηadd(%) Pout(dBm) 48 TIM7179-60SL Power Dissipation(PT) vs. Case Temperature(Tc) PT(W) 200 100 0 0 40 80 120 160 200 40 42 Tc( °C ) IM3 vs. Power Characteristics -10 VDS=10V IDSset≅9.5A -20 freq.=7.9GHz Δf=5MHz IM3(dBc) -30 -40 -50 -60 32 34 36 38 Pout(dBm) @Single carrier level 4