TOSHIBA TPCS8212

TPCS8212
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
TPCS8212
Lithium Ion Battery Applications
•
Unit: mm
Small footprint due to small and thin package
•
Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.)
•
High forward transfer admittance: |Yfs| = 11 S (typ.)
•
Low leakage current: IDSS = 10 µA (max) (VDS = 20 V)
•
Enhancement-mode: Vth = 0.5~1.2 V (VDS = 10 V, ID = 200 µA)
•
Common drain
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
20
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
20
V
Gate-source voltage
VGSS
±12
V
Drain current
DC
(Note 1)
ID
6
Pulse
(Note 1)
IDP
24
PD (1)
1.1
PD (2)
0.75
PD (1)
0.6
PD (2)
0.35
Single-device
Drain power
operation (Note 3a)
dissipation
Single-device value
(t = 10 s)
(Note 2a) at dual operation
(Note 3b)
Single-device
operation (Note 3a)
Drain power
dissipation
Single-device value
(t = 10 s)
(Note 2b) at dual operation
(Note 3b)
A
JEDEC
―
JEITA
―
TOSHIBA
2-3R1E
Weight: 0.035 g (typ.)
W
Circuit Configuration
Single pulse avalanche energy
(Note 4)
EAS
46.8
mJ
Avalanche current
IAR
6
A
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
EAR
0.075
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
8
7
6
5
1
2
3
4
Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) Please see next page.
This transistor is an electrostatic sensitive device. Please handle with caution.
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TPCS8212
Thermal Characteristics
Characteristics
Single-device operation
(Note 3a)
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2a) Single-device value at
dual operation
(Note 3b)
Single-device operation
(Note 3a)
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2b) Single-device value at
dual operation
(Note 3b)
Symbol
Max
Rth (ch-a) (1)
114
Rth (ch-a) (2)
167
Rth (ch-a) (1)
208
Rth (ch-a) (2)
357
Unit
°C/W
°C/W
Marking (Note 6)
Type
S8212
※
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2:
a)
Device mounted on a glass-epoxy board (a)
b)
Device mounted on a glass-epoxy board (b)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
(a)
(b)
Note 3:
a)
The power dissipation and thermal resistance values are shown for a single device
(During single-device operation, power is only applied to one device.).
b)
The power dissipation and thermal resistance values are shown for a single device
(During dual operation, power is evenly applied to both devices.).
Note 4: VDD = 16 V, Tch = 25°C (initial), L = 1.0 mH, RG = 25 Ω, IAR = 6 A
Note 5: Repetitive rating; pulse width limited by max channel temperature.
Note 6: ○ on lower right of the marking indicates Pin 1.
* shows lot number. (year of manufacture: last decimal digit of the year of manufacture, month of
manufacture: January to December are denoted by letters A to L respectively)
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TPCS8212
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±10 V, VDS = 0 V


±10
µA
Drain cut-OFF current
IDSS
VDS = 20 V, VGS = 0 V


10
µA
V (BR) DSS
ID = 10 mA, VGS = 0 V
20


V (BR) DSX
ID = 10 mA, VGS = −12 V
8


Vth
VDS = 10 V, ID = 200 µA
0.5

1.2
VGS = 2.0 V, ID = 4.2 A

26
45
VGS = 2.5 V, ID = 4.2 A

21
29
VGS = 4.0 V, ID = 4.8 A

16
24
VDS = 10 V, ID = 3.0 A
5.5
11


1590


180


200


6.4


22


10


42


20


3.5


4.5

Gate threshold voltage
Drain-source ON resistance
RDS (ON)
Forward transfer admittance
|Yfs|
Input capacitance
Ciss
Reverse transfer capacitance
Crss
Output capacitance
Coss
Rise time
Turn-ON time
VDS = 10 V, VGS = 0 V, f = 1 MHz
tr
ton
Turn-OFF time
Total gate charge
(gate-source plus gate-drain)
4.7 Ω
Switching time
Fall time
tf
toff
ID = 3 A
5V
VGS
0V
VDD ∼
− 10 V
VOUT
RL = 3.3 Ω
Drain-source breakdown voltage
Duty <
= 1%, tw = 10 µs
Qg
Gate-source charge 1
Qgs1
Gate-drain (“miller”) charge
Qgd
VDD ∼
− 16 V, VGS = 5 V, ID = 6 A
V
V
mΩ
S
pF
ns
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Drain reverse current
Forward voltage (diode)
Pulse (Note 1)
Symbol
Test Condition
Min
Typ.
Max
Unit
IDRP



24
A


−1.2
V
VDSF
IDR = 6 A, VGS = 0 V
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TPCS8212
ID – VDS
5
Common source
Ta = 25°C
Pulse test
1.7
2
8
1.6
ID
3
1.5
Drain current
(A)
ID
Drain current
Common source
Ta = 25°C
Pulse test
4, 5
2
1.8
(A)
4
4, 5
ID – VDS
10
2
1
6
1.7
4
1.6
2
1.5
VGS = 1.4 V
0
0
0.4
0.8
1.2
1.6
Drain-source voltage VDS
VGS = 1.4 V
0
0
2.0
(V)
1
(V)
Drain-source voltage VDS
(A)
ID
Drain current
6
4
100
1
Ta = −55°C
2
3
Gate-source voltage
5
(V)
VDS – VGS
8
0
0
4
0.8
Common source
VDS = 10 V
Pulse test
25
3
Drain-source voltage VDS
ID – VGS
10
2
2
4
VGS
Common source
Ta = 25°C
Pulse test
0.6
0.4
1.5
ID = 12 A
0.2
6
0
0
5
3
(V)
2
4
6
Gate-source voltage
|Yfs| – ID
8
VGS
10
(V)
RDS (ON) – ID
100
(S)
100
2.5
Drain-source ON resistance
RDS (ON) (mΩ)
Forward transfer admittance
Yfs
25
Ta = −55°C
100
10
1
0.1
Common source
VDS = 10 V
Pulse test
Ta = 25°C
Pulse test
1
0.1
10
ID
VGS = 4 V
10
Common source
1
Drain current
2
(A)
1
Drain current
4
10
ID
(A)
2002-01-17
TPCS8212
RDS (ON) – Ta
IDR – VDS
10
Common source
30
VGS = 2.5 V
VGS = 4 V
10
1
3
(A)
IDR
VGS = 2 V
Drain reverse current
0
VGS = −1 V
5
3
Common source
Ta = 25°C
ID = 1.5, 3, 6 A
0
−80
−40
0
40
Pulse test
80
120
1
0
160
0.2
Ambient temperature Ta (°C)
0.4
Gate threshold voltage Vth (V)
1.6
1000
Capacitance
C
(pF)
Ciss
Coss
100
Crss
Common source
Ta = 25°C
VGS = 0 V
f = 1 MHz
10
Drain-source voltage VDS
0.4
100
0.6
0.4
(4)
100
120
160
150
16
VDS
12
VGS
5
8
4
2
4
8
16
Total gate charge
Ambient temperature Ta (°C)
10
6
VDD = 16 V
8
0
0
200
Common source
ID = 6 A
Ta = 25°C
Pulse test
VGS
(V)
t = 10 s
50
80
Dynamic input/output characteristics
0.2
0
0
40
20
Device mounted on a glass-epoxy board (b)
(Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual
operation (Note 3b)
(3)
0
(V)
Device mounted on a glass-epoxy board (a)
(Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
(2)
−40
Ambient temperature Ta (°C)
Drain-source voltage VDS
(W)
PD
Drain power dissipation
0.8
(1)
(V)
0.8
PD – Ta
1.2
1.2
Common source
VDS = 10 V
ID = 200 µA
Pulse test
1.2
0
−80
1
1.0
Vth – Ta
Capacitance – VDS
1
0.8
Drain-source voltage VDS
10000
10
0.1
0.6
(V)
Drain-source ON resistance
RDS (ON) (mΩ)
40
20
5
10
Pulse test
50
24
Qg
Gate-source voltage
60
0
32
(nC)
2002-01-17
TPCS8212
rth − tw
1000
Normalized transient thermal impedance
rth (°C/W)
Device mounted on a glass-epoxy board (a) (Note 2a)
500 (1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
300
Device mounted on a glass-epoxy board (b) (Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual operation (Note 3b)
(4)
(3)
(2)
(1)
100
50
30
10
5
3
1
0.5
0.3
Single pulse
0.1
0.001
0.01
0.1
1
Pulse width
10
tw
100
1000
(S)
Safe operating area
100
Single-device value at dual
operation
(Note 3b)
50
30 ID max (pulse) *
Drain current
ID
(A)
10
1 ms *
10 ms *
5
3
1
0.5
0.3
0.1
0.05 * Single pulse Ta = 25°C
0.03 Curves must be derated linearly
with increase in temperature.
0.01
0.01
0.03
0.1
0.3
1
VDSS max
3
Drain-source voltage VDS
10
30
100
(V)
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2002-01-17
TPCS8212
RESTRICTIONS ON PRODUCT USE
000707EAA
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
• The information contained herein is subject to change without notice.
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