GT60M323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M323 Voltage Resonance Inverter Switching Application • Unit: mm Enhancement mode type • High speed • • Low saturation voltage : VCE (sat) = 2.3 V (typ.) (IC = 60 A) FRD included between emitter and collector • TO-3P(LH) (Toshiba package name) : tf = 0.09 μs (typ.) (IC = 60 A) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage VCES 900 V Gate-emitter voltage VGES ±25 V @ Tc = 100°C Continuous collector current @ Tc = 25°C Pulsed collector current Diode forward current Collector power dissipation IC 31 60 ICP 120 DC IF 15 Pulsed IFP 120 @ Tc = 100°C @ Tc = 25°C Junction temperature Storage temperature range PC 80 200 A A A W JEDEC ― JEITA ― TOSHIBA Tj 150 °C Tstg −55 to 150 °C 2-21F2C Weight: 9.75 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance (IGBT) Rth (j-c) 0.625 °C/W Thermal resistance (diode) Rth (j-c) 4.0 °C/W Equivalent Circuit Marking Collector Part No. (or abbreviation code) TOSHIBA GT60M323 Gate Lot No. JAPAN Emitter A line indicates lead (Pb)-free package or lead (Pb)-free finish. 1 2006-11-01 GT60M323 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGES VGE = ±25 V, VCE = 0 ― ― ±500 nA Collector cut-off current ICES VCE = 900 V, VGE = 0 ― ― 0.1 mA VGE (OFF) IC = 60 mA, VCE = 5 V 4.0 ― 7.0 V VCE (sat) IC = 60 A, VGE = 15 V ― 2.3 2.8 V VCE = 10 V, VGE = 0, f = 1 MHz ― 4200 ― pF Resistive Load ― 0.25 ― VCC = 600 V, IC = 60 A ― 0.37 ― VGG = ±15 V, RG = 51 Ω ― 0.09 0.20 ― 0.40 ― Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Cies tr Rise time Switching time Turn-on time ton Fall time tf Turn-off time (Note 1) toff μs Diode forward voltage VF IF = 15 A, VGE = 0 ― 1.1 1.9 V Reverse recovery time trr IF = 60 A, di/dt = −20 A/μs ― 1.4 3.0 µs Note 1: Switching time measurement circuit and input/output waveforms VGE 90% 10% 0 RG RL IC 0 90% VCC 0 90% 10% VCE 10% td (off) tf toff 2 tr ton 2006-11-01 GT60M323 IC – VCE 120 10 Common emitter 100 Tc = -40°C IC – VCE 120 (A) 8 Collector current IC (A) Collector current IC 80 VGE = 20 V 60 7 40 20 9 15 8 VGE = 20 V 80 60 7 40 20 6 6 0 0 1 2 3 Collector-emitter voltage 4 0 0 5 VCE (V) 1 2 3 Collector-emitter voltage IC – VCE 4 5 VCE (V) IC – VGE 120 80 Common emitter 100 Tc = 125°C Common emitter VCE = 5V 15 10 (A) VGE = 20 V (A) 9 80 Collector current IC Collector current IC 10 Common emitter 100 Tc = 25°C 9 15 8 60 7 40 20 60 40 20 Tc = 125°C −40 6 25 0 0 1 2 3 Collector-emitter voltage 4 0 0 5 2 4 Gate-emitter voltage VCE (V) 6 8 10 VGE (V) VCE (sat) – Tc Collector-emitter saturation voltage VCE (sat) (V) 4 Common emitter VGE = 15 V 80 3 60 30 2 IC = 10 A 1 0 −60 −20 20 60 100 140 Case temperature Tc (°C) 3 2006-11-01 GT60M323 VCE, VGE – QG C – VCE 100 10 VCE = 150 V 50 0 0 100 5 60 120 180 Gate charge QG (pF) 15 Capacitance C 150 Cies VGE (V) Common emitter RL = 2.5 Ω Tc = 25°C 50 10000 20 Gate-emitter voltage Collector-emitter voltage VCE (V) 200 1000 100 Coes Cres 10 1 0 240 10 0.1 Common emitter VCC = 600 V IC = 60 A VGG = ±15 V Tc = 25°C ton toff tr tf 0.01 1 10 100 Gate resistance 1 0.1 RG (Ω) ton tf tr 10 20 40 Collector current IC * Single non-repetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 60 70 (A) Tj < = 125°C VGG = 20 V (A) RG = 10 Ω IC max (continuous) 10 µs* 100 µs* DC operation 50 Reverse Bias SOA Collector current IC (A) Collector current IC 10 30 1000 1 ms* VCE (V) Common emitter VCC = 600 V RG = 51 Ω VGG = ±15 V Tc = 25°C Safe Operating Area IC max (pulsed)* 10000 toff 0.01 0 1000 1000 100 1000 Switching Time – IC 10 Switching time (µs) Switching time (µs) 1 100 Collector-emitter voltage (nC) Switching Time – RG 10 Common emitter VGE = 0 f = 1 MHz Tc = 25°C 100 10 10 ms * 1 1 10 100 1000 1 1 10000 Collector- emitter voltage VCE (V) 10 100 Collector-emitter voltage 4 1000 10000 VCE (V) 2006-11-01 GT60M323 (°C/W) Common emitter VGE = 15 V 60 Transient thermal impedance Rth (t) 50 40 30 20 10 75 50 100 125 Tc Case temperature 150 Tc = 25°C 101 Diode stage 100 IGBT stage 10−1 10−2 10−5 10−4 10−3 (°C) 10−1 Pulse width IF – V F 100 101 tw (s) 1.6 trr (µs) Reverse recovery time (A) 80 60 40 Tc = 125°C 20 25 −40 0.4 0.8 1.2 1.6 Forward voltage VF 2.0 (V) trr 1.4 16 Irr 1.2 14 1.0 12 0.8 0 2.4 18 Common Collector di/dt = −20 A/µs Tc = 25°C (A) Common collector 0 0 102 trr, Irr – IF 100 Forward current IF 10−2 20 40 Forward current IF 60 Irr 0 25 Rth (t) – tw 102 Peak reverse recovery current Maximum DC collector current ICmax (A) ICmax – Tc 70 10 80 (A) trr, Irr – di/dt 80 Reverse recovery time 1.2 60 0.8 40 20 0.4 Irr 0.0 0 40 80 120 160 Irr trr (µs) trr (A) Common collector IF = 60 A Tc = 25°C Peak reverse recovery current 1.6 0 180 di/dt (A/µs) 5 2006-11-01 GT60M323 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-01