Si7459DP New Product Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) - 30 0.0068 @ VGS = - 10 V - 22 D TrenchFETr Power MOSFETS D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile APPLICATIONS D Battery and Load Switching - Notebook Computers - Notebook Battery Packs PowerPAK SO-8 S S 6.15 mm 5.15 mm 1 S 2 S 3 G G 4 D 8 D 7 D 6 D 5 D Bottom View P-Channel MOSFET Ordering Information: Si7459DP-T1 - E3 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS - 30 Gate-Source Voltage VGS "25 Continuous Drain Current (TJ = 150_C)a TA = 25_C V - 22 - 13 - 17 - 10 ID TA = 70_C Pulsed Drain Current IDM continuous Source Current (Diode Conduction)a IS TA = 25_C Maximum Power Dissipationa Unit TA = 70_C Operating Junction and Storage Temperature Range PD A - 60 - 4.5 - 1.6 5.4 1.9 3.4 1.2 TJ, Tstg W _C - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction Junction-to-Ambient to Ambienta Maximum Junction-to-Case (Drain) Symbol t v 10 sec Steady State Steady State RthJA RthJC Typical Maximum 18 23 52 65 1.0 1.5 Unit _C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72631 S-32678—Rev. A, 29-Dec-03 www.vishay.com 1 Si7459DP New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = - 250 mA - 1.0 Typ Max Unit - 3.0 V Static Gate Threshold Voltage Gate Body Leakage Gate-Body IGSS VDS = 0 V, VGS = "20 V "100 VDS = 0 V, VGS = "25 V "200 nA VDS = - 30 V, VGS = 0 V -1 VDS = - 30 V, VGS = 0 V, TJ = 70_C - 10 Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) VDS = - 5 V, VGS = - 10 V rDS(on) VGS = - 10 V, ID = - 22 A 0.0056 gfs VDS = - 15 V, ID = - 22 A 50 VSD IS = - 2.9 A, VGS = 0 V - 0.71 - 1.1 113 170 Drain-Source On-State Forward Resistancea Transconductancea Diode Forward Voltagea mA - 30 A W 0.0068 S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 32.5 Turn-On Delay Time td(on) 25 Rise Time VDS = - 15 V, VGS = - 10 V, ID = - 22 A tr 17 nC 40 20 30 180 270 tf 130 200 Gate Resistance Rg 4 Source-Drain Reverse Recovery Time trr Turn-Off Delay Time VDD = - 15 V, RL = 15 W ID ^ - 1 A, VGEN = - 10 V, RG = 6 W td(off) Fall Time IF = - 2.9 A, di/dt = 100 A/ms ns W 100 150 ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 60 60 VGS = 10 thru 5 V 4V 50 I D - Drain Current (A) I D - Drain Current (A) 50 40 30 20 10 2 3 4 VDS - Drain-to-Source Voltage (V) www.vishay.com 2 20 TC = 125_C 25_C - 55_C 0 1 30 10 3V 0 40 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS - Gate-to-Source Voltage (V) Document Number: 72631 S-32678—Rev. A, 29-Dec-03 Si7459DP New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Capacitance 10000 0.008 8000 C - Capacitance (pF) r DS(on) - On-Resistance ( W ) On-Resistance vs. Drain Current 0.010 VGS = 10 V 0.006 0.004 0.002 Ciss 6000 4000 Coss 2000 Crss 0.000 0 0 10 20 30 40 50 0 6 Gate Charge 24 30 On-Resistance vs. Junction Temperature 10 1.6 VDS = 15 V ID = 22 A 8 r DS(on) - On-Resistance (W) (Normalized) V GS - Gate-to-Source Voltage (V) 18 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) 6 4 2 0 0 20 40 60 80 100 1.4 1.2 1.0 0.8 0.6 - 50 120 VGS = 10 V ID = 22 A - 25 0 Qg - Total Gate Charge (nC) Source-Drain Diode Forward Voltage 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage TJ = 150_C TJ = 25_C 1 0.016 0.012 ID = 22 A 0.008 0.004 0.000 0.1 0.00 50 0.020 r DS(on) - On-Resistance ( W ) 10 25 TJ - Junction Temperature (_C) 100 I S - Source Current (A) 12 0.2 0.4 0.6 0.8 VSD - Source-to-Drain Voltage (V) Document Number: 72631 S-32678—Rev. A, 29-Dec-03 1.0 1.2 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) www.vishay.com 3 Si7459DP New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Single Pulse Power 200 0.4 160 ID = 250 mA Power (W) V GS(th) Variance (V) Threshold Voltage 0.6 0.2 0.0 - 0.2 120 80 40 - 0.4 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 TJ - Temperature (_C) 0.1 1 10 Time (sec) Safe Operating Area 100 1 ms Limited by rDS(on) I D - Drain Current (A) 10 10 ms 100 ms 1 1s 0.1 10 s TC = 25_C Single Pulse dc 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 52_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 www.vishay.com 4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 72631 S-32678—Rev. A, 29-Dec-03 Si7459DP New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 10 -4 Document Number: 72631 S-32678—Rev. A, 29-Dec-03 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 5