Si4831DY New Product Vishay Siliconix P-Channel 30-V (D-S) MOSFET with Schottky Diode VDS (V) –30 rDS(on) () ID (A) 0.045 @ VGS = –10 V 5 0.090 @ VGS = –4.5 V 3.5 VKA (V) Vf (V) Diode Forward Voltage IF (A) 30 0.53 V @ 3 A 3 S K D A SO-8 A 1 8 K A 2 7 K S 3 6 D G 4 5 D G Top View P-Channel MOSFET Symbol Limit Drain-Source Voltage (MOSFET) Parameter VDS –30 Reverse Voltage (Schottky) VKA 30 Gate-Source Voltage (MOSFET) VGS 20 Continuous Drain Current (TJ = 150C) 150 C) (MOSFET)a, b TA = 25C TA = 70C Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction)a, b Average Foward Current (Schottky) Pulsed Foward Current (Schottky) Maximum Power Dissipation (MOSFET)a, b Maximum Power Dissipation (Schottky)a, b Operating Junction and Storage Temperature Range ID 5 IDM 20 IS –1.7 IF 3 IFM 20 2 TA = 70C 1.28 PD TA = 70C V 3.9 TA = 25C TA = 25C Unit 1.83 A W 1.17 TJ, Tstg –55 to 150 C Notes a. Surface Mounted on FR4 Board. b. t 10 sec. Document Number: 71061 S-61859—Rev. A, 10-Oct-99 www.vishay.com FaxBack 408-970-5600 2-1 Si4831DY New Product Vishay Siliconix Parameter Device Symbol Typical Maximum 52 62.5 MOSFET Maximum Junction-to-Ambient (t v 10 sec)a Schottky RthJA MOSFET Maximum Junction-to-Ambient (t = steady state)a Schottky MOSFET Maximum Junction-to-Foot RthJF Schottky 56 68 82 100 91 110 27 33 32 40 Unit C/W Notes a. Surface Mounted on FR4 Board. b. t v 10 sec. Parameter Symbol Test Condition Min VDS = VGS, ID = –250 mA –1.0 Typ Max Unit Static Gate Threshold Voltage Gate-Body Leakage VGS(th) IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain Source On-State On State Resistancea Drain-Source Forward Transconductancea Diode Forward Voltagea V VDS = 0 V, VGS = "20 V "100 VDS = –24 V, VGS = 0 V –1 VDS = –24 V, VGS = 0 V, TJ = 75C –10 VDS w –5 V, VGS = –10 V –20 mA A VGS = –10 V, ID = –5 A 0.036 0.045 VGS = –4.5 V, ID = –3.5 A 0.060 0.090 gfs VDS = –15 V, ID = –5 A 9 VSD IS = –1.7 A, VGS = 0 V –0.75 –1.2 10 20 VDS = –15 15 V V, VGS = –5 5V V, ID = –5 5A 4.5 rDS(on) DS( ) nA W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time tr Turn-Off Delay Time td(off) Fall Time tf Source-Drain Reverse Recovery Time trr nC C 3.6 VDD = –15 V,, RL = 15 W 15 V ID ^ –1 1 A, A VGEN = –10 10 V V, RG = 6 W IF = –1.7 A, di/dt = 100 A/ms 13 25 15 30 37 70 14 30 35 70 Typ Max ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Parameter Forward Voltage Drop M i Maximum R Reverse Leakage L k Current C Junction Capacitance www.vishay.com FaxBack 408-970-5600 2-2 Symbol VF Irm CT Test Condition Min IF = 3 A 0.485 0.53 IF = 3 A, TJ = 125C 0.42 0.47 Vr = 30 V 0.008 0.1 Vr = 30 V, TJ = 75C 0.4 5 Vr = 30 V, TJ = 125C 6.5 20 Vr = 15 V 102 Unit V mA A pF Document Number: 71061 S-61859—Rev. A, 10-Oct-99 Si4831DY New Product Vishay Siliconix Output Characteristics Transfer Characteristics 20 20 VGS = 10 thru 5 V 16 I D – Drain Current (A) I D – Drain Current (A) 16 12 4V 8 4 3V 12 8 TC = 125C 4 25C –55C 0 0 0 2 4 6 8 10 0 1 VDS – Drain-to-Source Voltage (V) 2 3 4 5 VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 1500 0.16 0.12 C – Capacitance (pF) r DS(on)– On-Resistance ( ) Ciss 1200 VGS = 4.5 V 0.08 VGS = 10 V 0.04 900 600 Coss 300 0 Crss 0 0 4 8 12 16 0 20 6 18 24 30 VDS – Drain-to-Source Voltage (V) ID – Drain Current (A) Gate Charge On-Resistance vs. Junction Temperature 1.8 10 VDS = 10 V ID = 5.7 A 1.6 8 r DS(on)– On-Resistance ( ) (Normalized) V GS – Gate-to-Source Voltage (V) 12 6 4 2 0 0 4 8 12 Qg – Total Gate Charge (nC) Document Number: 71061 S-61859—Rev. A, 10-Oct-99 16 20 VGS = 10 V ID = 5.7 A 1.4 1.2 1.0 0.8 0.6 0.4 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (C) www.vishay.com FaxBack 408-970-5600 2-3 Si4831DY New Product Vishay Siliconix Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.20 r DS(on)– On-Resistance ( W ) I S – Source Current (A) 20 10 TJ = 150C TJ = 25C 0.16 0.12 0.08 ID = 5.7 A 0.04 0 1 0.00 0.25 0.50 0.75 1.00 1.25 0 1.50 2 VSD – Source-to-Drain Voltage (V) 6 8 10 VGS – Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power, Junction-to-Ambient 40 0.8 0.6 32 ID = 250 mA 0.4 24 Power (W) V GS(th) Variance (V) 4 0.2 –0.0 16 –0.2 8 –0.4 –0.6 –50 0 –25 0 25 50 75 100 125 150 0.01 0.1 TJ – Temperature (C) 1 10 30 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: PDM 0.1 0.1 t1 0.05 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 82C/W 0.02 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10–4 10–3 10–2 10–1 1 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com FaxBack 408-970-5600 2-4 Document Number: 71061 S-61859—Rev. A, 10-Oct-99 Si4831DY New Product Vishay Siliconix Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 Reverse Current vs. Junction Temperature Forward Voltage Drop 40 5 1 0.1 30 V I F – Forward Current (A) I R – Reverse Current (mA) 10 10 V 0.01 TJ = 150C 1 TJ = 25C 0.001 0.0001 0.1 0 25 50 75 100 125 150 0 TJ – Junction Temperature (C) 0.4 0.6 0.8 Capacitance 500 CT – Junction Capacitance (pF) 0.2 VF – Forward Voltage Drop (V) 400 300 200 100 0 0 6 12 18 24 30 VKA – Reverse Voltage (V Document Number: 71061 S-61859—Rev. A, 10-Oct-99 www.vishay.com FaxBack 408-970-5600 2-5 Si4831DY New Product Vishay Siliconix Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: PDM 0.1 0.1 t1 0.05 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 91C/W 0.02 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10–4 10–3 10–2 10–1 1 10 100 600 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 www.vishay.com FaxBack 408-970-5600 2-6 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71061 S-61859—Rev. A, 10-Oct-99