SPICE MODEL: MMBTA92 MMBTA92 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features · · · · · Epitaxial Planar Die Construction SOT-23 Complementary NPN Type Available (MMBTA42) Ideal for Medium Power Amplification and Switching A Lead Free/RoHS Compliant (Note 4) C Qualified to AEC-Q101 Standards for High Reliability B Mechanical Data · · · · · · · · · C B TOP VIEW E Case: SOT-23 D E G Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 H K Moisture Sensitivity: Level 1 per J-STD-020C M J Terminal Connections: See Diagram Terminals: Solderable per MIL-STD-202, Method 208 L C Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Marking (See Page 2): K3R Ordering & Date Code Information: See Page 2 Weight: 0.008 grams (approximate) Maximum Ratings E B Dim Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 E 0.45 0.60 G 1.78 2.05 H 2.80 3.00 J 0.013 0.10 K 0.903 1.10 L 0.45 0.61 M 0.085 0.180 a 0° 8° All Dimensions in mm @ TA = 25°C unless otherwise specified Characteristic Symbol MMBTA92 Unit Collector-Base Voltage VCBO -300 V Collector-Emitter Voltage VCEO -300 V Emitter-Base Voltage VEBO -5.0 V Collector Current (Note 1) (Note 3) IC -500 mA Power Dissipation (Note 1) Pd 300 mW RqJA 417 °C/W Tj, TSTG -55 to +150 °C Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Electrical Characteristics Characteristic @ TA = 25°C unless otherwise specified Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO -300 ¾ V IC = -100mA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -300 ¾ V IC = -1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO -5.0 ¾ V IE = -100mA, IC = 0 Collector Cutoff Current ICBO ¾ -250 nA VCB = -200V, IE = 0 Collector Cutoff Current IEBO ¾ -100 nA VCE = -3.0V, IC = 0 hFE 25 40 25 ¾ ¾ IC = -1.0mA, VCE = -10V IC = -10mA, VCE = -10V IC = -30mA, VCE = -10V Collector-Emitter Saturation Voltage VCE(SAT) ¾ -0.5 V IC = -20mA, IB = -2.0mA Base- Emitter Saturation Voltage VBE(SAT) ¾ -0.9 V IC = -20mA, IB = -2.0mA Ccb ¾ 6.0 pF VCB = -20V, f = 1.0MHz, IE = 0 fT 50 ¾ MHz OFF CHARACTERISTICS (Note 2) ON CHARACTERISTICS (Note 2) DC Current Gain SMALL SIGNAL CHARACTERISTICS Output Capacitance Current Gain-Bandwidth Product Notes: VCE = -20V, IC = -10mA, f = 100MHz 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Short duration test pulse used to minimize self-heating effect. 3. When operated under collector-emitter saturation conditions within the safe operating area defined by the thermal resistance rating (RqJA), power dissipation rating (Pd) and power derating curve (figure 1). 4. No purposefully added lead. DS30060 Rev. 10 - 2 1 of 3 www.diodes.com MMBTA92 ã Diodes Incorporated Ordering Information Notes: (Note 5) Device Packaging Shipping MMBTA92-7-F SOT-23 3000/Tape & Reel 5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information YM K3R K3R = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September Date Code Key Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 Code J K L M N P R S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) 1.0 PD, POWER DISSIPATION (mW) 350 300 250 200 150 100 50 IC IB = 10 0.9 0.8 0.7 0.6 0.5 0.4 TA = 150°C 0.3 0.2 TA = 25°C 0.1 TA = -50°C 0 0 0 25 50 75 100 125 150 175 200 10 1000 100 IC, COLLECTOR CURRENT (mA) Fig. 2, Collector Emitter Saturation Voltage vs. Collector Current TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs Ambient Temperature DS30060 Rev. 10 - 2 1 2 of 3 www.diodes.com MMBTA92 1.0 10000 VBE(ON), BASE EMITTER VOLTAGE (V) hFE, DC CURRENT GAIN (NORMALIZED) VCE = 5V 1000 TA = 150°C 100 TA = -50°C TA = 25°C 10 1 10 1 100 1000 VCE = 5V 0.9 TA = -50°C 0.8 0.7 TA = 25°C 0.6 0.5 TA = 150°C 0.4 0.3 0.2 0.1 IC, COLLECTOR CURRENT (mA) Fig. 3, DC Current Gain vs Collector Current 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 4, Base Emitter Voltage vs Collector Current fT, GAIN BANDWIDTH PRODUCT (MHz) 100 VCE = 5V 10 1 10 1 IC, COLLECTOR CURRENT (mA) Fig. 5, Gain Bandwidth Product vs Collector Current IMPORTANT NOTICE Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the component may directly threaten life or cause injury without the expressed written approval of Diodes Incorporated. DS30060 Rev. 10 - 2 3 of 3 www.diodes.com MMBTA92