DIODES ZXMN10B08E6TA

ZXMN10B08E6
100V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS = 100V; RDS(ON) = 0.230
ID = 1.9A
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
SOT23-6
FEATURES
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• SOT23-6 package
APPLICATIONS
• DC - DC Converters
• Power Management Functions
• Disconnect switches
• Motor control
PINOUT
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMN10B08E6TA
7”
8mm
3000 units
ZXMN10B08E6TC
13”
8mm
10000 units
DEVICE MARKING
Top View
• 10B8
ISSUE 1 - OCTOBER 2005
1
SEMICONDUCTORS
ZXMN10B08E6
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Drain-Source Voltage
V DSS
Gate Source Voltage
V GS
Continuous Drain Current V GS =10V; T A =25°C (b)
V GS =10V; T A =70°C (b)
V GS =10V; T A =25°C (a)
Pulsed Drain Current (c)
ID
LIMIT
UNIT
100
V
20
V
1.9
1.5
1.6
A
I DM
9
A
IS
I SM
2.5
A
9
A
Power Dissipation at T A =25°C (a)
Linear Derating Factor
PD
1.1
8.8
W
mW/°C
Power Dissipation at T A =25°C (b)
Linear Derating Factor
PD
1.7
13.6
W
mW/°C
Operating and Storage Temperature Range
T j :T stg
-55 to +150
°C
VALUE
UNIT
Continuous Source Current (Body Diode) (b)
Pulsed Source Current (Body Diode) (c)
THERMAL RESISTANCE
PARAMETER
SYMBOL
Junction to Ambient (a)
R θJA
113
°C/W
Junction to Ambient (b)
R θJA
73
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐5 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300␮s - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph
ISSUE 1 - OCTOBER 2005
SEMICONDUCTORS
2
ZXMN10B08E6
CHARACTERISTICS
ISSUE 1 - OCTOBER 2005
3
SEMICONDUCTORS
ZXMN10B08E6
ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
Drain-Source Breakdown Voltage
V (BR)DSS
100
Zero Gate Voltage Drain Current
I DSS
TYP.
MAX. UNIT CONDITIONS.
STATIC
I GSS
V GS(th)
Static Drain-Source On-State Resistance R DS(on)
(1)
V
Gate-Body Leakage
Gate-Source Threshold Voltage
Forward Transconductance (1)(3)
1.0
0.5
␮A
100
nA
3.0
V
0.230
0.300
0.500
⍀
⍀
g fs
4.8
S
C iss
C oss
497
pF
Output Capacitance
29
pF
Reverse Transfer Capacitance
C rss
18
pF
I D =250␮A, V GS =0V
V DS =100V, V GS =0V
V GS =⫾20V, V DS =0V
I =250␮A, V DS = V GS
D
V GS =10V, I D =1.6A
V GS =4.5V, I D =1.4A
V GS =4.3V, I D =1.1A
V DS =15V,I D =1.6A
DYNAMIC (3)
Input Capacitance
V DS =50 V, V GS =0V,
f=1MHz
SWITCHING(2) (3)
Turn-On Delay Time
t d(on)
2.9
ns
Rise Time
tr
2.1
ns
Turn-Off Delay Time
t d(off)
12.1
ns
Fall Time
tf
5.0
ns
Gate Charge
Qg
5.0
nC
Total Gate Charge
Qg
9.2
nC
Gate-Source Charge
Q gs
1.7
nC
Gate-Drain Charge
Q gd
2.5
nC
Diode Forward Voltage (1)
V SD
0.85
Reverse Recovery Time (3)
t rr
Reverse Recovery Charge (3)
Q rr
V DD =50V, I D =1.0A
R G ≅6.0⍀, V GS =10V
V DS =50V,V GS =5V,
I D =1.6A
V DS =50V,V GS =10V,
I D =1.6A
SOURCE-DRAIN DIODE
0.95
V
T J =25°C, I S =2.0A,
V GS =0V
32.0
ns
40.0
nC
T J =25°C, I F =1.7A,
di/dt= 100A/␮s
NOTES
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - OCTOBER 2005
SEMICONDUCTORS
4
ZXMN10B08E6
TYPICAL CHARACTERISTICS
ISSUE 1 - OCTOBER 2005
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SEMICONDUCTORS
ZXMN10B08E6
TYPICAL CHARACTERISTICS
ISSUE 1 - OCTOBER 2005
SEMICONDUCTORS
6
ZXMN10B08E6
PACKAGE OUTLINE
PAD LAYOUT DETAILS
e
b
L 2
E1
E
DATUM A
a
e1
D
C
A
A2
A1
CONTROLLING DIMENSIONS IN MILLIMETRES APPROX CONVERSIONS INCHES.
PACKAGE DIMENSIONS
Millimetres
Inches
Millimetres
DIM
Inches
DIM
Min
Max
Min
Max
Min
Max
Min
Max
A
0.90
1.45
0.35
0.057
E
2.60
3.00
0.102
0.118
A1
0.00
0.15
0
0.006
E1
1.50
1.75
0.059
0.069
A2
0.90
1.30
b
0.35
0.50
0.035
0.051
L
0.10
0.60
0.004
0.002
0.014
0.019
e
0.95 REF
0.037 REF
C
0.09
0.20
0.0035
0.008
e1
1.90 REF
0.074 REF
D
2.80
3.00
0.110
0.118
L
0°
10°
0°
10°
© Zetex Semiconductors plc 2005
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This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
ISSUE 1 - OCTOBER 2005
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SEMICONDUCTORS