BCV27 BCV47 SOT23 NPN SILICON PLANAR DARLINGTON TRANSISTORS ISSUE 3 SEPTEMBER 1995 ✪ FEATURES * High VCEO * Low saturation voltage COMPLEMENTARY TYPES BCV27 BCV28 BCV47 BCV48 E C B PARTMARKING DETAILS BCV27 ZFF BCV47 ZFG SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL BCV27 BCV47 UNIT Collector-Base Voltage VCBO 40 80 V Collector-Emitter Voltage VCEO 30 60 V Emitter-Base Voltage VEBO 10 V Peak Pulse Current ICM 800 mA Continuous Collector Current IC 500 mA Base Current IB 100 mA Power Dissipation at Tamb=25°C Ptot 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL BCV47 MIN. MAX. 80 UNIT CONDITIONS. V(BR)CBO BCV27 MIN. MAX. 40 Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current V IC=100µA V(BR)CEO 30 60 V IC=10mA* V(BR)EBO 10 10 V IE=10µA VCB = 30V VCB = 60V VCB=30V,Tamb =150oC VCB=60V,Tamb =150oC VEB=4V ICBO 100 Emitter Base Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio IEBO 100 10 100 nA nA µA µA nA VCE(sat) 1.0 1.0 V IC=100mA,IB=0.1mA* VBE(sat) 1.5 1.5 V IC=100mA,IB=0.1mA* Transition Frequency fT 4K 10K 20K 4K 170 Typical 2K 4K 10K 2K 170 Typical MHz Output Capacitance Cobo 3.5 Typical 3.5 Typical pF 10 hFE 100 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Periodic Sample Test Only. For typical graphs see FMMT38A datasheet 3 - 22 IC=100µA, VCE=1V IC=10mA, VCE=5V* IC=100mA, VCE=5V* IC=500mA, VCE=5V* IC=50mA, VCE=5V f = 20MHz VCB=10V, f=1MHz