DMP2035U P-CHANNEL ENHANCEMENT MODE MOSFET • • • • • • • • Mechanical Data • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Up To 3KV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Case: SOT23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Weight: 0.008 grams (approximate) • • • Drain SOT23 D Gate Gate Protection Diode ESD PROTECTED TO 3kV Top View Source S G Internal Schematic Top View Ordering Information (Note 4) Part Number DMP2035U-7 DMP2035UQ-7 Notes: Compliance Standard Automotive Case SOT23 SOT23 Packaging 3000 / 7” Tape & Reel 3000 / 7” Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information Chengdu A/T Site Date Code Key Year Code Month Code 2009 W Jan 1 MP3 Shanghai A/T Site 2010 X Feb 2 DMP2035U Document number: DS31830 Rev. 4 - 2 MP3 = Product Type Marking Code YM = Date Code Marking for SAT (Shanghai Assembly/ Test site) YM = Date Code Marking for CAT (Chengdu Assembly/ Test site) Y or Y = Year (ex: A = 2013) M = Month (ex: 9 = September) YM MP3 YM NEW PRODUCT Features Mar 3 2011 Y Apr 4 May 5 2012 Z Jun 6 1 of 7 www.diodes.com 2013 A Jul 7 Aug 8 2014 B Sep 9 Oct O 2015 C Nov N Dec D October 2013 © Diodes Incorporated DMP2035U Maximum Ratings (@T A = +25°C, unless otherwise specified.) Characteristic NEW PRODUCT Symbol Value Unit Drain-Source Voltage V DSS -20 V Gate-Source Voltage V GSS ±8 V ID -3.6 -2.9 A I DM -24 A Symbol Value Unit PD 0.81 W R θJA 153.5 °C/W T J , T STG -55 to +150 °C Continuous Drain Current (Note 5) Steady State T A = +25°C T A = +70°C Pulsed Drain Current (Note 6) Thermal Characteristics Characteristic Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient @T A = +25°C Operating and Storage Temperature Range Electrical Characteristics (@T A = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BV DSS -20 — — V V GS = 0V, I D = -250μA Zero Gate Voltage Drain Current T J = +25°C I DSS — — -1.0 μA V DS = -20V, V GS = 0V Gate-Source Leakage I GSS — — ±10 μA V GS = ±8V, V DS = 0V V GS(th) -0.4 -0.7 -1.0 V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V DS = V GS , I D = -250μA V GS = -4.5V, I D = -4.0A R DS(ON) — 23 30 41 35 45 62 mΩ Forward Transfer Admittance |Y fs | — 14 — S V DS = -5V, I D = -4A Diode Forward Voltage V SD — -0.7 -1.0 V V GS = 0V, I S = -1A Input Capacitance C iss — 1610 — pF Output Capacitance C oss — 157 — pF Reverse Transfer Capacitance Static Drain-Source On-Resistance V GS = -2.5V, I D = -4.0A V GS = -1.8V, I D = -2.0A DYNAMIC CHARACTERISTICS (Note 8) C rss — 145 — pF Gate Resistance Rg — 9.45 — Ω Total Gate Charge Qg — 15.4 — nC Gate-Source Charge Q gs — 2.5 — nC Gate-Drain Charge Q gd — 3.3 — nC Turn-On Delay Time t D(on) — 16.8 — ns Turn-On Rise Time tr — 12.4 — ns Turn-Off Delay Time t D(off) — 94.1 — ns tf — 42.4 — ns Turn-Off Fall Time Notes: V DS = -10V, V GS = 0V f = 1.0MHz V DS = 0V, V GS = 0V, f = 1MHz V GS = -4.5V, V DS = -10V, I D = -4A V DS = -10V, V GS = -4.5V, R L = 10Ω, R G = 6.0Ω, I D = -1A 5. Device mounted on FR-4 PCB with 2 oz. Copper and test pulse width t ≦10s. 6. Repetitive rating, pulse width limited by junction temperature. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMP2035U Document number: DS31830 Rev. 4 - 2 2 of 7 www.diodes.com October 2013 © Diodes Incorporated DMP2035U 25 20 VGS = -8.0V VGS = -3.5V VGS = -3.2V VGS = -3.0V -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 20 VGS = -2.0V VGS = -2.5V 15 10 5 VDS = -5V 15 10 TA = 150°C 5 VGS = -1.5V TA = 125°C TA = 85°C TA = 25°C TA = -55°C 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic 5 0.07 0.06 0.05 VGS = -1.8V 0.04 VGS = -2.5V 0.03 VGS = -4.5V 0.02 0.1 1 10 -ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage DMP2035U Document number: DS31830 Rev. 4 - 2 0.5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) NEW PRODUCT VGS = -4.5V 100 3 of 7 www.diodes.com 1 1.5 2 -VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 2.5 0.05 VGS = -4.5V 0.04 TA = 150°C TA = 125°C TA = 85°C 0.03 TA = 25°C 0.02 TA = -55°C 0.01 0 4 8 12 16 -ID, DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 20 October 2013 © Diodes Incorporated 1.2 1.0 VGS = -4.5V ID = -10A 0.8 0.6 -50 0.05 0.04 VGS = -2.5V ID = -5A 0.03 0.02 VGS = -4.5V ID = -10A 0.01 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature Fig. 5 On-Resistance Variation with Temperature 20 1.2 18 1.0 -IS, SOURCE CURRENT (A) -V GS(TH), GATE THRESHOLD VOLTAGE (V) DMP2035U 0.06 RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω) RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.4 VGS = -2.5V ID = -5A 0.8 ID = -1mA 0.6 ID = -250µA 0.4 16 14 12 10 TA = 150°C 8 TA = 125°C 6 TA = 85°C 4 0.2 TA = 25°C 2 TA = -55°C 0 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 0 0.3 0.6 0.9 1.2 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.5 10,000 10,000 -IDSS, LEAKAGE CURRENT (nA) TA = 150°C C, CAPACITANCE (pF) NEW PRODUCT 1.6 Ciss 1,000 TA = 125°C 1,000 100 TA = 85°C 10 TA = 25°C Coss TA = -55°C Crss 100 0 2 1 4 6 8 10 12 14 16 18 20 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance DMP2035U Document number: DS31830 Rev. 4 - 2 4 of 7 www.diodes.com 2 4 6 8 10 12 14 16 18 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Leakage Current vs. Drain-Source Voltage 20 October 2013 © Diodes Incorporated 10,000 DMP2035U 10,000 TA = 150°C -IGSS, LEAKAGE CURRENT (nA) -IGSS, LEAKAGE CURRENT (nA) 1,000 100 TA = 85°C TA = 25°C TA = -55°C 10 1 0.1 1 TA = 125°C 1,000 100 TA = 85°C TA = 25°C TA = -55°C 10 1 0.1 1 2 3 4 5 6 7 8 -VGS, GATE-SOURCE VOLTAGE (V) Fig. 12 Gate-Source Leakage Current vs. Voltage 2 3 4 5 6 7 8 -V GS, GATE-SOURCE VOLTAGE (V) Fig. 11 Gate-Source Leakage Current vs. Voltage 100 PW = 10µs -ID, DRAIN CURRENT (A) RDS(on) Limited 10 DC 1 PW = 10s PW = 1s PW = 100ms PW = 10ms PW = 1ms 0.1 PW = 100µs 0.01 0.01 0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 13 SOA, Safe Operation Area 100 1 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT TA = 150°C TA = 125°C D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 158°C/W D = 0.02 0.01 P(pk) D = 0.01 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 DMP2035U Document number: DS31830 Rev. 4 - 2 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 14 Transient Thermal Response 5 of 7 www.diodes.com 10 100 1,000 October 2013 © Diodes Incorporated DMP2035U Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0° 8° α All Dimensions in mm NEW PRODUCT B C H K M K1 D J F L G Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. Y Z C X Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 E IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT DMP2035U Document number: DS31830 Rev. 4 - 2 6 of 7 www.diodes.com October 2013 © Diodes Incorporated DMP2035U Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or NEW PRODUCT 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2013, Diodes Incorporated www.diodes.com DMP2035U Document number: DS31830 Rev. 4 - 2 7 of 7 www.diodes.com October 2013 © Diodes Incorporated