MMBTA63LT1, MMBTA64LT1 MMBTA64LT1 is a Preferred Device Darlington Transistors PNP Silicon http://onsemi.com Features • Pb−Free Packages are Available COLLECTOR 3 BASE 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCES −30 Vdc Collector −Base Voltage VCBO −30 Vdc Emitter −Base Voltage VEBO −10 Vdc IC −500 mAdc Collector Current − Continuous EMITTER 2 3 1 2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol Max Unit 225 1.8 mW mW/°C 556 °C/W 300 2.4 mW mW/°C RqJA 417 °C/W TJ, Tstg −55 to +150 °C SOT−23 (TO−236) CASE 318 STYLE 6 PD RqJA MARKING DIAGRAM PD Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 2x M G G 1 2x = Device Code x = U for MMBTA63LT1 x = V for MMBTA64LT1 M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping † MMBTA63LT1 SOT−23 3,000 / Tape & Reel MMBTA63LT1G MMBTA64LT1 MMBTA64LT1G SOT−23 3,000 / Tape & Reel (Pb−Free) SOT−23 3,000 / Tape & Reel SOT−23 3,000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 January, 2006 − Rev. 2 1 Publication Order Number: MMBTA63LT1/D MMBTA63LT1, MMBTA64LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max −30 − − −100 − −100 5,000 10,000 10,000 20,000 − − − − − −1.5 − −2.0 125 − Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = −100 mAdc) V(BR)CEO Collector Cutoff Current (VCB = −30 Vdc) ICBO Emitter Cutoff Current (VEB = −10 Vdc) IEBO Vdc nAdc nAdc ON CHARACTERISTICS DC Current Gain (Note 3) (IC = −10 mAdc, VCE = −5.0 Vdc) (IC = −10 mAdc, VCE = −5.0 Vdc) (IC = −100 mAdc, VCE = −5.0 Vdc) (IC = −100 mAdc, VCE = −5.0 Vdc) hFE MMBTA63 MMBTA64 MMBTA63 MMBTA64 Collector −Emitter Saturation Voltage (IC = −100 mAdc, IB = −0.1 mAdc) VCE(sat) Base − Emitter On Voltage (IC = −100 mAdc, VCE = −5.0 Vdc) VBE(on) − Vdc Vdc SMALL− SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = −10 mAdc, VCE = −5.0 Vdc, f = 100 MHz) fT 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. http://onsemi.com 2 MHz MMBTA63LT1, MMBTA64LT1 hFE , DC CURRENT GAIN (X1.0 K) 200 TA = 125°C 100 70 50 30 −10 V 25°C VCE = −2.0 V −5.0 V 20 10 7.0 5.0 −55°C 3.0 2.0 −0.3 −0.5 −0.7 −1.0 −2.0 −3.0 −5.0 −7.0 −10 −20 −30 −50 −70 −100 −200 −300 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS −2.0 TA = 25°C VBE(sat) @ IC/IB = 100 −1.2 VBE(on) @ VCE = −5.0 V −0.8 VCE(sat) @ IC/IB = 1000 IC/IB = 100 −0.4 0 −0.3 −0.5 −1.0 −2 −3 −5 −10 −20 −30 −50 IC, COLLECTOR CURRENT (mA) −100 −200 −300 TA = 25°C −1.8 −1.6 −1.4 IC = −10 mA −50 mA −100 mA −175 mA −1.0 −0.8 −0.6 −0.1−0.2 −0.5 −1 −2 −5 −10 −20 −50 −100−200−500 −1K−2K −5K−10K IB, BASE CURRENT (mA) Figure 2. Collector Saturation Region 10 4.0 3.0 2.0 −300 mA −1.2 Figure 3. “On” Voltage |h FE |, HIGH FREQUENCY CURRENT GAIN V, VOLTAGE (VOLTS) −1.6 −2.0 VCE = −5.0 V f = 100 MHz TA = 25°C 1.0 0.4 0.2 0.1 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 IC, COLLECTOR CURRENT (mA) −500 Figure 4. High Frequency Current Gain http://onsemi.com 3 −1K MMBTA63LT1, MMBTA64LT1 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D SEE VIEW C 3 HE E c 1 2 b DIM A A1 b c D E e L L1 HE 0.25 e q A L A1 L1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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