DIODES ZXTN5551GTC

ZXTN5551G
160V, SOT223, NPN high voltage transistor
Summary
BVCEO > 160V
BVEBO > 6V
IC(cont) = 600mA
PD = 2W
Complementary part number ZXTP5401G
Description
C
A high voltage NPN transistor in a high power dissipation
surface mount package
B
Features
•
160V rating
•
SOT223 package
E
Applications
•
E
High voltage amplification
Ordering information
Device
C
Reel size
(inches)
Tape width
(mm)
Quantity
per reel
ZXTN5551GTA
7
12
1000
ZXTN5551GTC
13
12
4000
C
B
Pinout - top view
Device marking
ZXTN
5551
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ZXTN5551G
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Collector-base voltage
VCBO
180
V
Collector-emitter voltage
VCEO
160
V
Emitter-base voltage
VEBO
6
V
Continuous collector current(a)
IC
600
mA
Power dissipation at TA = 25°C(a)
PD
2
W
16
mW/°C
Tj, Tstg
-55 to 150
°C
Symbol
Value
Unit
RJA
62.5
°C/W
Linear derating factor
Operating and storage temperature range
Thermal resistance
Parameter
Junction to
ambient(a)
NOTES:
(a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
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Characteristics
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Electrical characteristics (at Tamb = 25°C unless otherwise stated).
Parameter
Symbol
Min.
Typ.
Collector-base breakdown BVCBO
voltage
180
270
V
IC = 100A
Collector-emitter
breakdown voltage
(base open)
BVCEO
160
200
V
IC = 1mA (*)
Emitter-base breakdown
voltage
BVEBO
6
7.85
V
IE = 10A
Collector cut-off current
ICBO
Collector-emitter
saturation voltage
VCE(Sat)
Base-emitter saturation
voltage
VBE(Sat)
Static forward current
transfer ratio
hFE
Transition frequency
fT
Output capacitance
COBO
Small signal
hFE
<1
Max.
Unit
Conditions
50
nA
VCB = 120V
50
A
VCB = 120V, Tamb= 100°C
65
150
mV
IC = 10mA, IB = 1mA (*)
115
200
mV
IC = 50mA, IB = 5mA (*)
760
1000
mV
IC = 10mA, IB = 1mA (*)
840
1200
mV
IC = 50mA, IB = 5mA (*)
80
135
80
140
30
65
IC = 1mA, VCE = 5V (*)
250
IC = 50mA, VCE = 5V (*)
130
6
50
IC = 10mA, VCE = 5V (*)
MHz
IC = 10mA, VCE = 10V
f = 100MHz
pF
VCB = 10V, f = 1MHz (*)
260
IC = 10mA, VCE = 10V,
f=1kHz (†)
Delay time
t(d)
95
ns
Rise time
t(r)
64
ns
Storage time
t(s)
1256
ns
Fall time
t(f)
140
ns
VCC = 10V. IC = 10mA,
IB1 = IB2= 1mA
NOTES:
(*) Measured under pulsed conditions. Pulse width 300s; duty cycle 2%.
(†) Periodic sample test only.
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ZXTN5551G
Typical Characteristics
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Intentionally left blank
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Package outline - SOT223
Dim.
Millimeters
Inches
Dim.
Millimeters
Inches
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
A
-
1.80
-
0.071
D
6.30
6.70
0.248
0.264
A1
0.02
0.10
0.0008
0.004
e
2.30 BSC
0.0905 BSC
A2
1.55
1.65
0.0610
0.0649
e1
4.60 BSC
0.181 BSC
b
0.66
0.84
0.026
0.033
E
6.70
7.30
0.264
0.287
b2
2.90
3.10
0.114
0.122
E1
3.30
3.70
0.130
0.146
C
0.23
0.33
0.009
0.013
L
0.90
-
0.355
-
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
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ZXTN5551G
Definitions
Product change
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The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for
the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is
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1. are intended to implant into the body
or
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B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or to affect its safety or effectiveness.
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Product status key:
“Preview”
Future device intended for production at some point. Samples may be available
“Active”
Product status recommended for new designs
“Last time buy (LTB)”
Device will be discontinued and last time buy period and delivery is in effect
“Not recommended for new designs” Device is still in production to support existing designs and production
“Obsolete”
Production has been discontinued
Datasheet status key:
“Draft version”
This term denotes a very early datasheet version and contains highly provisional information, which
may change in any manner without notice.
“Provisional version”
This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.
However, changes to the test conditions and specifications may occur, at any time and without notice.
“Issue”
This term denotes an issued datasheet containing finalized specifications. However, changes to
specifications may occur, at any time and without notice.
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© 2007 Published by Zetex Semiconductors plc
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