DIODES ZXTP25100CZ

ZXTP25100CZ
100V PNP medium power transistor in SOT89
Summary
BVCEO > -100V
BVECO > -7V
IC(cont) = 1A
VCE(sat) < -225mV @ 1A
RCE(sat) = 155m⍀
PD = 2.4W
Complementary part number ZXTN25100DZ
Description
C
Advanced process capability and package design have been used to
maximize the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it
ideally suited to applications where space is at a premium.
B
Features
•
High power dissipation SOT89 package
•
High peak current
•
Low saturation voltage
•
7V reverse blocking
E
Applications
E
•
Motor drive
•
High side driver
•
Load disconnect switch
C
C
B
Ordering information
Device
ZXTP25100CZTA
Reel size
(inches)
Tape width
(mm)
Quantity
per reel
7
12
1000
Pinout - top view
Device marking
•
IL7
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ZXTP25100CZ
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Collector-Base voltage
VCBO
-115
V
Collector-Emitter voltage
VCEO
-100
V
Emitter-Collector voltage (reverse blocking)
VECO
-7
V
Emitter-Base voltage
VEBO
-7
V
Continuous Collector current(c)
IC
-1
A
Base current
IB
-500
mA
Peak pulse current
ICM
-3
A
Power dissipation at TA =25°C(a)
PD
1.1
W
8.8
mW/°C
Linear derating factor
PD
Power dissipation at TA =25°C(b)
Linear derating factor
PD
Power dissipation at TA =25°C(c)
Linear derating factor
PD
Power dissipation at TA =25°C(d)
Linear derating factor
1.8
W
14.4
mW/°C
2.4
W
19.2
mW/°C
4.46
W
35.7
mW/°C
15.7
W
126
mW/°C
Tj, Tstg
-55 to 150
°C
Symbol
Limit
Unit
Junction to ambient(a)
R⍜JA
117
°C/W
Junction to ambient(b)
R⍜JA
68
°C/W
Junction to ambient(c)
R⍜JA
51
°C/W
Junction to ambient(d)
R⍜JA
28
°C/W
Junction to case(e)
R⍜JC
7.95
°C/W
PD
Power dissipation at TC =25°C(e)
Linear derating factor
Operating and storage temperature range
Thermal resistance
Parameter
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(c) Mounted on 50mm x 50mm x 0.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(d) As (c) above measured at t<5 seconds.
(e) Junction to case (collector tab). Typical
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ZXTP25100CZ
Thermal characteristics
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ZXTP25100CZ
Thermal characteristics
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ZXTP25100CZ
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Collector-Base breakdown
voltage
Collector-Emitter
breakdown voltage
(base open)
Emitter-Base breakdown
voltage
Emitter-Collector
breakdown voltage
(reverse blocking)
Emitter-Collector
breakdown voltage (base
open)
Collector-Base cut-off
current
BVCBO
-115
-180
V
IC = -100μA
BVCEO
-100
-140
V
IC = -10mA (*)
BVEBO
-7
-8.4
V
IE= -100μA
BVECX
-7
-8.3
V
IE = -100μA, RBC < 1kΩ or 0.25V > VBC > 0.25V
BVECO
-7
-8.8
V
IE = -100μA
Collector-Emitter cut-off
current
ICEX
Emitter-Base cut-off
current
Collector-Emitter
saturation voltage
IEBO
<-1
Max.
Unit
Conditions
-50
-0.5
nA
μA
VCB =-115V
VCB =-115V, Tamb=100°C
-100
nA
VCE = -90V, RBE < 1kΩ or 0.25V < VBE < 1V
<-1
-50
nA
VEB = -5.6V
VCE(sat)
-140
-80
-180
-155
-210
-115
-315
-225
mV
mV
mV
mV
IC = -100mA, IB = -1 mA(*)
IC = -500mA, IB = -50mA(*)
IC = -500mA, IB = -20mA(*)
IC = -1A, IB = -100mA(*)
Base-Emitter saturation
voltage
Base-Eitter turn-on
voltage
Static forward current
transfer ratio
VBE(sat)
-860
-950
mV
IC = -1A, IB = -100mA(*)
VBE(on)
-800
-900
mV
IC =-1A, VCE = -2V(*)
350
320
190
35
500
Transition frequency
fT
180
MHz
IC = -20mA, VCE = -15V
f = 100MHz
Input capacitance
Cibo
153
pF
VEB = -0.5V, f = 1MHz(*)
Output capacitance
Cobo
14.1
pF
VCB = 10V, f = 1MHz(*)
Delay time
td
15.8
ns
Rise time
tr
41
ns
Storage time
ts
411
ns
Fall time
tf
89
ns
ICBO
hFE
200
180
110
20
20
IC = -10mA, VCE = -2V(*)
IC = -100mA, VCE = -2V(*)
IC = -500mA, VCE = -2V(*)
IC = -1A, VCE = -2V(*)
Vcc = -10V, Ic = -500mA
IB1 = -IB2 = -50mA
NOTES:
(*) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%.
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ZXTP25100CZ
Typical characteristics
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ZXTP25100CZ
Package outline - SOT89
D
A
C
D1
E
H
E1
L
B
e
B1
DIM
e1
Millimeters
Inches
Min
Max
Min
Max
A
1.40
1.60
0.550
0.630
B
0.44
0.56
0.017
B1
0.36
0.48
C
0.35
D
D1
DIM
Millimeters
Inches
Min
Max
Min
Max
E
2.29
2.60
0.090
0.102
0.022
E1
2.13
2.29
0.084
0.090
0.014
0.019
e
1.50 BSC
0.059 BSC
0.44
0.014
0.017
e1
3.00 BSC
0.118 BSC
4.40
4.60
0.173
0.181
H
3.94
4.25
0.155
0.167
1.52
1.83
0.064
0.072
L
0.89
1.20
0.035
0.047
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
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ZXTP25100CZ
Definitions
Product change
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The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for
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1. are intended to implant into the body
or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
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B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to
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Product status key:
“Preview”
Future device intended for production at some point. Samples may be available
“Active”
Product status recommended for new designs
“Last time buy (LTB)”
Device will be discontinued and last time buy period and delivery is in effect
“Not recommended for new designs” Device is still in production to support existing designs and production
“Obsolete”
Production has been discontinued
Datasheet status key:
“Draft version”
This term denotes a very early datasheet version and contains highly provisional information, which
may change in any manner without notice.
“Provisional version”
This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.
However, changes to the test conditions and specifications may occur, at any time and without notice.
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This term denotes an issued datasheet containing finalized specifications. However, changes to
specifications may occur, at any time and without notice.
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© 2007 Published by Zetex Semiconductors plc
Issue 1 - December 2007
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