NTD2955 Power MOSFET −60 V, −12 A, P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high− speed switching applications in power supplies, converters, and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer an additional safety margin against unexpected voltage transients. http://onsemi.com V(BR)DSS RDS(on) TYP ID MAX −60 V 155 m @ −10 V, 6 A −12 A Features • Avalanche Energy Specified • IDSS and VDS(on) Specified at Elevated Temperature • Designed for Low−Voltage, High−Speed Switching Applications and • P−Channel D to Withstand High Energy in the Avalanche and Commutation Modes Pb−Free Packages are Available G MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Value Unit Drain−to−Source Voltage VDSS −60 Vdc Gate−to−Source Voltage − Continuous − Non−repetitive (tp ≤ 10 ms) VGS VGSM ± 20 ± 25 Vdc Vpk Drain Current Drain Current − Continuous @ Ta = 25°C Drain Current − Single Pulse (tp ≤ 10 ms) ID IDM −12 −36 Adc Apk Total Power Dissipation @ Ta = 25°C PD 55 W Operating and Storage Temperature Range TJ, Tstg −55 to 175 °C EAS 216 mJ Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 12 Apk, L = 3.0 mH, RG = 25 ) Thermal Resistance − Junction−to−Case − Junction−to−Ambient (Note 1) − Junction−to−Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes, 1/8 in. from case for 10 seconds S MARKING DIAGRAMS 4 Drain 4 1 2 DPAK CASE 369C STYLE 2 AYW NT2955 Symbol 3 2 1 3 Drain Gate Source 4 Drain RJC RJA RJA 2.73 71.4 100 °C/W TL 260 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. When surface mounted to an FR4 board using 1 in pad size (Cu area = 1.127 in2). 2. When surface mounted to an FR4 board using the minimum recommended pad size (Cu area = 0.412 in2). 4 DPAK−3 CASE 369D STYLE 2 1 2 AYW NT2955 Rating 3 1 2 3 Gate Drain Source NT2955 A Y W Device Code = Assembly Location = Year = Work Week ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Semiconductor Components Industries, LLC, 2004 October, 2004 − Rev. 7 1 Publication Order Number: NTD2955/D NTD2955 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max Unit −60 − − 67 − − − − − − −10 −100 − − −100 −2.0 − −2.8 4.5 −4.0 − − 0.155 0.180 −1.86 − −2.6 −2.0 8.0 − Mhos pF OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note 3) (VGS = 0 Vdc, ID = −0.25 mA) (Positive Temperature Coefficient) V(BR)DSS Zero Gate Voltage Drain Current (VGS = 0 Vdc, VDS = −60 Vdc, TJ = 25°C) (VGS = 0 Vdc, VDS = −60 Vdc, TJ = 150°C) IDSS Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) IGSS Vdc mV/°C Adc nAdc ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (VDS = VGS, ID = −250 Adc) (Negative Temperature Coefficient) VGS(th) Static Drain−Source On−State Resistance (VGS = −10 Vdc, ID = −6.0 Adc) RDS(on) Drain−to−Source On−Voltage (VGS = −10 Vdc, ID = −12 Adc) (VGS = −10 Vdc, ID = −6.0 Adc, TJ = 150°C) VDS(on) Forward Transconductance (VDS = 10 Vdc, ID = 6.0 Adc) Vdc mV/°C Vdc gFS DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VDS = −25 Vdc, VGS = 0 Vdc, F = 1.0 MHz) Reverse Transfer Capacitance Ciss − 500 750 Coss − 150 250 Crss − 50 100 td(on) − 10 20 tr − 45 85 td(off) − 26 40 SWITCHING CHARACTERISTICS (Notes 3 and 4) Turn−On Delay Time Rise Time Turn−Off Delay Time (VDD = −30 Vdc, ID = −12 A, VGS = −10 V, RG = 9.1 ) Fall Time Gate Charge (VDS = −48 Vdc, VGS = −10 Vdc, ID = −12 A) tf − 48 90 QT − 15 30 QGS − 4.0 − QGD − 7.0 − − − −1.6 −1.3 −2.5 − trr − 50 ta − 40 − tb − 10 − QRR − 0.10 − ns nC DRAIN−SOURCE DIODE CHARACTERISTICS (Note 3) VSD Diode Forward On−Voltage (IS = 12 Adc, VGS = 0 V) (IS = 12 Adc, VGS = 0 V, TJ = 150°C) Reverse Recovery Time (IS = 12 A A, dIS/dt = 100 A/ A/s ,V VGS = 0 V) Reverse Recovery Stored Charge 3. Indicates Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperature. http://onsemi.com 2 Vdc ns C NTD2955 TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) −ID, DRAIN CURRENT (A) −8 V −7 V −6.5 V 15 −6 V 10 −5.5 V −5 V 5 0 1 2 3 4 5 6 7 8 9 16 14 12 10 8 6 4 2 2 TJ = 125°C 0.30 0.25 0.20 25°C 0.15 −55°C 0.10 0.05 5 6 7 8 9 3 6 15 12 9 18 −ID, DRAIN CURRENT (AMPS) 21 24 10 0.250 TJ = 25°C 0.225 0.200 0.175 VGS = −10 V 0.150 −15 V 0.125 0.100 0.075 0.050 0 Figure 3. On−Resistance versus Drain Current and Temperature 3 6 12 15 9 18 −ID, DRAIN CURRENT (AMPS) 21 24 Figure 4. On−Resistance versus Drain Current and Gate Voltage 1000 2.0 1.6 4 3 Figure 2. Transfer Characteristics 0.35 1.8 125°C Figure 1. On−Region Characteristics VGS = −10 V 0 25°C 18 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 0.40 0 TJ = −55°C VDS ≥ −10 V −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 0.50 0.45 24 22 20 0 10 RDS(on), DRAIN−TO−SOURCE RESISTANCE (Ω) RDS(on), DRAIN−TO−SOURCE RESISTANCE (Ω) −9 V −9.5 V 20 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) VGS = −10 V TJ = 25°C VGS = 0 V VGS = −10 V ID = −6 A −IDSS, LEAKAGE (nA) −ID, DRAIN CURRENT (A) 25 1.4 1.2 1.0 0.8 0.6 0.4 100 TJ = 125°C 10 100°C 0.2 0 −50 −25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) 150 1 175 5 Figure 5. On−Resistance Variation with Temperature 10 15 20 25 30 35 40 45 50 55 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 6. Drain−To−Source Leakage Current versus Voltage http://onsemi.com 3 60 C, CAPACITANCE (pF) 1000 800 VDS = 0 V VGS = 0 V TJ = 25°C Ciss Crss Ciss 400 Coss 200 Crss 5 0 5 −VGS 10 15 20 25 ID = 12 A TJ = 25°C VDS 12.5 600 0 10 15 QT 10 60 50 40 VGS 7.5 30 QGD QGS 5 20 2.5 10 0 0 2 4 6 8 10 12 0 16 14 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1200 −VGS, GATE−TO−SOURCE VOLTAGE (V) NTD2955 QT, TOTAL GATE CHARGE (nC) −VDS GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) Figure 8. Gate−To−Source and Drain−To−Source Voltage versus Total Charge Figure 7. Capacitance Variation 15 VDD = −30 V ID = −12 A VGS = −10 V TJ = 25°C −IS, SOURCE CURRENT (AMPS) t, TIME (ns) 1000 100 tf tr td(off) td(on) 10 1 1 10 VGS = 0 V TJ = 25°C 10 5 0 100 0 0.5 0.25 RG, GATE RESISTANCE () 1 0.75 1.25 1.5 1.75 −VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure 10. Diode Forward Voltage versus Current −VDS, DRAIN−TO−SOURCE VOLTAGE (V) 100 VGS = −15 V SINGLE PULSE TC = 25°C 10 di/dt 100 s IS 1 ms 10 ms 1 trr dc ta RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 0.1 1 tb TIME 0.25 IS tp 10 100 IS −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 12. Diode Reverse Recovery Waveform Figure 11. Maximum Rated Forward Biased Safe Operating Area http://onsemi.com 4 NTD2955 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1.0 D = 0.5 0.2 0.1 P(pk) 0.1 0.05 0.02 t1 0.01 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.01 1.0E−05 1.0E−04 1.0E−03 1.0E−02 t, TIME (s) Figure 13. Thermal Response http://onsemi.com 5 1.0E−01 RJC(t) = r(t) RJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) RJC(t) 1.0E+00 1.0E+01 NTD2955 ORDERING INFORMATION Package Shipping† DPAK 75 Units / Rail DPAK (Pb−Free) 75 Units / Rail NTD2955−001 DPAK−3 75 Units / Rail NTD2955−1G DPAK−3 (Pb−Free) 75 Units / Rail DPAK 2500 / Tape & Reel DPAK (Pb−Free) 2500 / Tape & Reel Device NTD2955 NTD2955G NTD2955T4 NTD2955T4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 6 NTD2955 PACKAGE DIMENSIONS DPAK CASE 369C−01 ISSUE O −T− C B V SEATING PLANE E R 4 Z A S 1 2 DIM A B C D E F G H J K L R S U V Z 3 U K F J L H D G 2 PL 0.13 (0.005) M T INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 −−− 0.035 0.050 0.155 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT* 6.20 0.244 3.0 0.118 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 SCALE 3:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 7 MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 −−− 0.89 1.27 3.93 −−− NTD2955 PACKAGE DIMENSIONS DPAK−3 CASE 369D−01 ISSUE B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C B E R 4 DIM A B C D E F G H J K R S V Z Z A S 1 2 3 −T− SEATING PLANE K J F H D G 3 PL 0.13 (0.005) M INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN T SOLDERING FOOTPRINT* 6.20 0.244 3.0 0.118 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 SCALE 3:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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