ONSEMI BC847CDXV6T1G

BC847CDXV6T1G,
BC847CDXV6T5G,
BC848CDXV6T1G
Dual General Purpose
Transistors
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NPN Duals
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−563 which is designed for
low power surface mount applications.
(3)
(2)
(1)
Q1
Q2
Features
• These are Pb−Free Devices
(4)
(5)
(6)
BC847CDXV6T1
MAXIMUM RATINGS
Rating
Symbol
BC847
BC848
Unit
Collector − Emitter Voltage
VCEO
45
30
V
Collector − Base Voltage
VCBO
50
30
V
VEBO
6.0
5.0
V
IC
100
100
mAdc
Emitter − Base Voltage
Collector Current − Continuous
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
6
1
SOT−563
CASE 463A
MARKING DIAGRAMS
1x M G
G
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
1
Symbol
Max
Unit
1x
357
2.9
mW
mW/°C
M
G
RqJA
350
°C/W
Symbol
Max
Unit
500
4.0
mW
mW/°C
Total Device Dissipation, (Note 1)
TA = 25°C
Derate above 25°C
PD
Thermal Resistance,
Junction-to-Ambient (Note 1)
Characteristic
(Both Junctions Heated)
Total Device Dissipation, (Note 1)
TA = 25°C
Derate above 25°C
PD
Thermal Resistance,
Junction-to-Ambient (Note 1)
RqJA
250
°C/W
TJ, Tstg
−55 to +150
°C
Junction and Storage
Temperature Range
= Device Code
x = G or M
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
1. FR−4 @ Minimum Pad
© Semiconductor Components Industries, LLC, 2011
April, 2011 − Rev. 3
1
Publication Order Number:
BC847CDXV6T1/D
BC847CDXV6T1G, BC847CDXV6T5G, BC848CDXV6T1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
45
30
−
−
−
−
50
30
−
−
−
−
50
30
−
−
−
−
6.0
5.0
−
−
−
−
−
−
−
−
15
5.0
−
420
270
520
−
800
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 10 mA)
BC847CDXV6T1
BC848CDXV6T1
Collector −Emitter Breakdown Voltage
(IC = 10 mA, VEB = 0)
BC847CDXV6T1
BC848CDXV6T1
Collector −Base Breakdown Voltage
(IC = 10 mA)
BC847CDXV6T1
BC848CDXV6T1
Emitter −Base Breakdown Voltage
(IE = 1.0 mA)
BC847CDXV6T1
BC848CDXV6T1
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C)
ICBO
V
V
V
V
nA
mA
ON CHARACTERISTICS
DC Current Gain
(IC = 10 mA, VCE = 5.0 V)
(IC = 2.0 mA, VCE = 5.0 V)
hFE
−
Collector −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Collector −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
VCE(sat)
−
−
−
−
0.25
0.6
V
Base −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
VBE(sat)
−
−
0.7
0.9
−
−
V
Base −Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base −Emitter Voltage (IC = 10 mA, VCE = 5.0 V)
VBE(on)
580
−
660
−
700
770
mV
fT
100
−
−
MHz
Cobo
−
−
1.5
pF
−
−
10
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Noise Figure
(IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW,f = 1.0 kHz, BW = 200 Hz)
NF
dB
ORDERING INFORMATION
Device
Specific Marking
BC847CDXV6T1G
BC847CDXV6T5G
BC848CDXV6T1G
1G
1L
Package
Shipping†
SOT−563
(Pb−Free)
4000 Units / Tape & Reel
SOT−563
(Pb−Free)
8000 Units / Tape & Reel
SOT−563
(Pb−Free)
4000 Units / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
BC847CDXV6T1G, BC847CDXV6T5G, BC848CDXV6T1G
TYPICAL CHARACTERISTICS
1000
0.30
VCE = 1 V
150°C
800
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
900
700
600
25°C
500
400
−55°C
300
200
100
0
0.001
0.01
0.1
0.6
−55°C
0.05
0.0001
0.001
0.01
0.1
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
IC/IB = 20
−55°C
25°C
150°C
0.3
0.2
0.10
Figure 1. DC Current Gain vs. Collector
Current
0.5
0.4
25°C
IC, COLLECTOR CURRENT (A)
VBE(on), BASE−EMITTER VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
0.7
0.15
IC, COLLECTOR CURRENT (A)
0.9
0.8
150°C
0.20
0
1
1.1
1.0
IC/IB = 20
0.25
0.0001
0.001
0.01
0.1
1.2
VCE = 5 V
1.1
1.0
0.9
−55°C
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
Figure 4. Base Emitter Voltage vs. Collector
Current
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3
0.1
BC847CDXV6T1G, BC847CDXV6T5G, BC848CDXV6T1G
TYPICAL CHARACTERISTICS
1.0
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR-EMITTER VOLTAGE (V)
2.0
TA = 25°C
1.6
IC = 200 mA
1.2
IC =
IC =
10 mA 20 mA
IC = 50 mA
IC = 100 mA
0.8
0.4
0
0.02
10
0.1
1.0
IB, BASE CURRENT (mA)
-55°C to +125°C
1.2
1.6
2.0
2.4
2.8
20
10
Cib
3.0
Cob
2.0
1.0
0.4 0.6 0.8 1.0
2.0
4.0 6.0 8.0 10
VR, REVERSE VOLTAGE (VOLTS)
40
20
400
300
200
VCE = 10 V
TA = 25°C
100
80
60
40
30
20
0.5 0.7
Figure 7. Capacitances
1.0
2.0 3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (mAdc)
100 mS
10 mS
1 mS
1S
0.1
Thermal Limit
0.01
0.001
0.1
30
Figure 8. Current−Gain − Bandwidth Product
1
IC, COLLECTOR CURRENT (A)
C, CAPACITANCE (pF)
TA = 25°C
5.0
100
Figure 6. Base−Emitter Temperature Coefficient
f,
T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
Figure 5. Collector Saturation Region
7.0
10
1.0
IC, COLLECTOR CURRENT (mA)
0.2
1
10
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 9. Safe Operating Area
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4
100
50
BC847CDXV6T1G, BC847CDXV6T5G, BC848CDXV6T1G
PACKAGE DIMENSIONS
SOT−563, 6 LEAD
CASE 463A−01
ISSUE F
D
−X−
6
1
e
A
5
4
2
3
L
E
−Y−
b
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
HE
DIM
A
b
C
D
E
e
L
HE
C
5 PL
6
0.08 (0.003)
M
X Y
MILLIMETERS
MIN
NOM MAX
0.50
0.55
0.60
0.17
0.22
0.27
0.08
0.12
0.18
1.50
1.60
1.70
1.10
1.20
1.30
0.5 BSC
0.10
0.20
0.30
1.50
1.60
1.70
INCHES
NOM MAX
0.021 0.023
0.009 0.011
0.005 0.007
0.062 0.066
0.047 0.051
0.02 BSC
0.004 0.008 0.012
0.059 0.062 0.066
MIN
0.020
0.007
0.003
0.059
0.043
STYLE 1:
PIN 1. EMITTER 1
2. BASE 1
3. COLLECTOR 2
4. EMITTER 2
5. BASE 2
6. COLLECTOR 1
SOLDERING FOOTPRINT*
0.3
0.0118
0.45
0.0177
1.35
0.0531
1.0
0.0394
0.5
0.5
0.0197 0.0197
SCALE 20:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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PUBLICATION ORDERING INFORMATION
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5
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For additional information, please contact your local
Sales Representative
BC847CDXV6T1/D