1PMT5920B Series 3.2 Watt Plastic Surface Mount POWERMITE Package This complete new line of 3.2 Watt Zener Diodes are offered in highly efficient micro miniature, space saving surface mount with its unique heat sink design. The POWERMITE package has the same thermal performance as the SMA while being 50% smaller in footprint area and delivering one of the lowest height profiles (1.1 mm) in the industry. Because of its small size, it is ideal for use in cellular phones, portable devices, business machines and many other industrial/consumer applications. http://onsemi.com PLASTIC SURFACE MOUNT 3.2 WATT ZENER DIODES 6.2 − 47 VOLTS Specification Features: • • • • • • • • • • • Zener Breakdown Voltage: 6.2 − 47 Volts DC Power Dissipation: 3.2 Watts with Tab 1 (Cathode) @ 75°C Low Leakage < 5 A ESD Rating of Class 3 (> 16 kV) per Human Body Model Low Profile − Maximum Height of 1.1 mm Integral Heat Sink/Locking Tabs Full Metallic Bottom Eliminates Flux Entrapment Small Footprint − Footprint Area of 8.45 mm2 Supplied in 12 mm Tape and Reel T1 = 3,000 Units per Reel T3 = 12,000 Units per Reel POWERMITE is JEDEC Registered as DO−216AA Cathode Indicated by Polarity Band Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic FINISH: All external surfaces are corrosion resistant and leads are readily solderable MOUNTING POSITION: Any MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 1 2 1: CATHODE 2: ANODE 1 2 POWERMITE CASE 457 PLASTIC MARKING DIAGRAM 1 CATHODE xxB xx 260°C for 10 Seconds D xxB D 2 ANODE = Specific Device Code = 20 − 41 = (See Table Next Page) = Date Code ORDERING INFORMATION Device Package Shipping 1PMT59xxBT1 POWERMITE 3,000/Tape & Reel 1PMT59xxBT3 POWERMITE 12,000/Tape & Reel LEAD ORIENTATION IN TAPE: Cathode (Short) Lead to Sprocket Holes Semiconductor Components Industries, LLC, 2003 July, 2003 − Rev. 0 1 Publication Order Number: 1PMT5920B/D 1PMT5920B Series MAXIMUM RATINGS Rating Symbol Value Unit °PD° RJA 500 4.0 248 °mW mW/°C °C/W Thermal Resistance from Junction to Lead (Anode) RJanode 35 °C/W Maximum DC Power Dissipation (Note 2) Thermal Resistance from Junction to Tab (Cathode) °PD° RJcathode 3.2 23 W °C/W TJ, Tstg −55 to +150 °C DC Power Dissipation @ TA = 25°C (Note 1) Derate above 25°C Thermal Resistance from Junction to Ambient Operating and Storage Temperature Range 1. Mounted with recommended minimum pad size, PC board FR−4. 2. At Tab (Cathode) temperature, Ttab = 75°C ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted, VF = 1.5 V Max. @ IF = 200 mAdc for all types) Symbol I IF Parameter VZ Reverse Zener Voltage @ IZT IZT Reverse Current ZZT Maximum Zener Impedance @ IZT IZK Reverse Current ZZK Maximum Zener Impedance @ IZK VZ VR V IR VF IZT IR Reverse Leakage Current @ VR VR Reverse Voltage IF Forward Current VF Forward Voltage @ IF Zener Voltage Regulator ELECTRICAL CHARACTERISTICS (TL = 30°C unless otherwise noted, VF = 1.25 Volts @ 200 mA) Zener Voltage (Note 3) IZT IR @ VR VR ZZT @ IZT (Note 4) ZZK @ IZK (Note 4) IZK Max (mA) (A) (V) () () (mA) 6.2 6.51 60.5 5.0 4.0 2.0 200 1.0 6.8 7.14 55.1 5.0 5.2 2.5 200 1.0 7.12 7.5 7.88 50 5.0 6.0 3.0 400 0.5 7.79 8.2 8.61 45.7 5.0 6.5 3.5 400 0.5 24B 8.64 9.1 9.56 41.2 5.0 7.0 4.0 500 0.5 25B 9.5 10 10.5 37.5 5.0 8.0 4.5 500 0.25 27B 11.4 12 12.6 31.2 1.0 9.1 6.5 550 0.25 29B 14.25 15 15.75 25 1.0 11.4 9.0 600 0.25 1PMT5930BT1, T3 30B 15.2 16 16.8 23.4 1.0 12.2 10 600 0.25 1PMT5931BT1, T3 31B 17.1 18 18.9 20.8 1.0 13.7 12 650 0.25 1PMT5933BT1, T3 33B 20.9 22 23.1 17 1.0 16.7 17.5 650 0.25 1PMT5934BT1, T3 34B 22.8 24 25.2 15.6 1.0 18.2 19 700 0.25 1PMT5935BT1, T3 35B 25.65 27 28.35 13.9 1.0 20.6 23 700 0.25 1PMT5936BT1, T3 36B 28.5 30 31.5 12.5 1.0 22.8 28 750 0.25 1PMT5939BT1, T3 39B 37.05 39 40.95 9.6 1.0 29.7 45 900 0.25 1PMT5941BT1, T3 41B 44.65 47 49.35 8.0 1.0 35.8 67 1000 0.25 VZ @ IZT (Volts) Device Device Marking Min Nom 1PMT5920BT1, T3 20B 5.89 1PMT5921BT1, T3 21B 6.46 1PMT5922BT1, T3 22B 1PMT5923BT1, T3 23B 1PMT5924BT1, T3 1PMT5925BT1, T3 1PMT5927BT1, T3 1PMT5929BT1, T3 3. Zener voltage is measured with the device junction in thermal equilibrium with an ambient temperature of 25°C. 4. Zener Impedance Derivation ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for IZ(ac) = 0.1 IZ(dc) with the ac frequency = 60 Hz. http://onsemi.com 2 1PMT5920B Series 3.5 100 3 IZ, ZENER CURRENT (mA) P D , MAXIMUM POWER DISSIPATION (W) TYPICAL CHARACTERISTICS 2.5 2 TL 1.5 1 10 1 0.5 0 0.1 25 50 75 100 125 150 175 5 7 8 9 10 VZ, ZENER VOLTAGE (VOLTS) 6 T, TEMPERATURE (°C) Figure 2. VZ to 10 Volts IZ , ZENER CURRENT (mA) 100 50 30 20 10 5 3 2 1 0.5 0.3 0.2 0.1 0 10 20 30 40 50 60 70 80 VZ, ZENER VOLTAGE (VOLTS) 90 100 VZ, TEMPERATURE COEFFICIENT (mV/°C) Figure 1. Steady State Power Derating 10 8 VZ @ IZT 6 4 2 0 −2 −4 2 4 200 ZZ , DYNAMIC IMPEDANCE (OHMS) VZ, TEMPERATURE COEFFICIENT (mV/°C) 6 8 10 VZ, ZENER VOLTAGE (VOLTS) 12 Figure 4. Zener Voltage − To 12 Volts Figure 3. VZ = 12 thru 47 Volts VZ @ IZT 100 70 50 30 20 10 10 11 20 30 50 70 100 VZ, ZENER VOLTAGE (VOLTS) 200 IZ(dc) = 1mA 100 70 50 30 20 10 7 5 10 mA 20 mA 3 2 5 200 Figure 5. Zener Voltage − 14 To 47 Volts 7 iZ(rms) = 0.1 IZ(dc) 10 20 30 50 VZ, ZENER VOLTAGE (VOLTS) Figure 6. Effect of Zener Voltage http://onsemi.com 3 70 100 Z Z , DYNAMIC IMPEDANCE (OHMS) 1PMT5920B Series 1k TJ = 25°C iZ(rms) = 0.1 IZ(dc) 500 200 100 50 20 10 5 22 V 2 12 V 1 0.5 1 6.8 V 2 5 10 20 50 100 200 500 IZ, ZENER TEST CURRENT (mA) Figure 7. Effect of Zener Current C, CAPACITANCE (pF) 10,000 1000 MEASURED @ 0 V BIAS MEASURED @ 50% VR 100 10 1 10 VZ, REVERSE ZENER VOLTAGE (VOLTS) Figure 8. Capacitance versus Reverse Zener Voltage http://onsemi.com 4 100 1PMT5920B Series TYPICAL SOLDER HEATING PROFILE The line on the graph shows the actual temperature that might be experienced on the surface of a test board at or near a central solder joint. The two profiles are based on a high density and a low density board. The Vitronics SMD310 convection/infrared reflow soldering system was used to generate this profile. The type of solder used was 62/36/2 Tin Lead Silver with a melting point between 177−189°C. When this type of furnace is used for solder reflow work, the circuit boards and solder joints tend to heat first. The components on the board are then heated by conduction. The circuit board, because it has a large surface area, absorbs the thermal energy more efficiently, then distributes this energy to the components. Because of this effect, the main body of a component may be up to 30 degrees cooler than the adjacent solder joints. For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones and a figure for belt speed. Taken together, these control settings make up a heating “profile” for that particular circuit board. On machines controlled by a computer, the computer remembers these profiles from one operating session to the next. Figure 9 shows a typical heating profile for use when soldering a surface mount device to a printed circuit board. This profile will vary among soldering systems, but it is a good starting point. Factors that can affect the profile include the type of soldering system in use, density and types of components on the board, type of solder used, and the type of board or substrate material being used. This profile shows temperature versus time. STEP 1 PREHEAT ZONE 1 RAMP" 200°C STEP 2 STEP 3 VENT HEATING SOAK" ZONES 2 & 5 RAMP" STEP 4 HEATING ZONES 3 & 6 SOAK" STEP 5 HEATING ZONES 4 & 7 SPIKE" STEP 6 VENT 205° TO 219°C PEAK AT SOLDER JOINT 170°C DESIRED CURVE FOR HIGH MASS ASSEMBLIES 160°C 150°C 150°C 140°C 100°C 100°C SOLDER IS LIQUID FOR 40 TO 80 SECONDS (DEPENDING ON MASS OF ASSEMBLY) DESIRED CURVE FOR LOW MASS ASSEMBLIES 50°C TIME (3 TO 7 MINUTES TOTAL) TMAX Figure 9. Typical Solder Heating Profile http://onsemi.com 5 STEP 7 COOLING 1PMT5920B Series INFORMATION FOR USING THE POWERMITE SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.025 0.635 0.105 2.67 0.030 0.762 0.100 2.54 0.050 1.27 inches mm POWERMITE POWERMITE POWER DISSIPATION SOLDERING PRECAUTIONS The power dissipation of the Powermite is a function of the drain pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the Powermite package, PD can be calculated as follows: PD = The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C. • The soldering temperature and time shall not exceed 260°C for more than 10 seconds. • When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less. • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. • Mechanical stress or shock should not be applied during cooling. TJ(max) − TA RJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 504 milliwatts. PD = 150°C − 25°C = 504 milliwatts 248°C/W The 248°C/W for the Powermite package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 504 milliwatts. There are other alternatives to achieving higher power dissipation from the Powermite package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. * * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. http://onsemi.com 6 1PMT5920B Series OUTLINE DIMENSIONS 1PMT5920BT3 Series − Surface Mounted POWERMITE CASE 457−04 ISSUE D F 0.08 (0.003) C −A− J M T B S TERM. 1 −B− K TERM. 2 R L J D H −T− 0.08 (0.003) M T B S C S http://onsemi.com 7 S C S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. DIM A B C D F H J K L R S MILLIMETERS INCHES MIN MAX MIN MAX 1.75 2.05 0.069 0.081 1.75 2.18 0.069 0.086 0.85 1.15 0.033 0.045 0.40 0.69 0.016 0.027 0.70 1.00 0.028 0.039 −0.05 +0.10 −0.002 +0.004 0.10 0.25 0.004 0.010 3.60 3.90 0.142 0.154 0.50 0.80 0.020 0.031 1.20 1.50 0.047 0.059 0.50 REF 0.019 REF 1PMT5920B Series POWERMITE is a registered trademark of and used under a license from Microsemi Corporation. Thermal Clad is a trademark of the Bergquist Corporation. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] JAPAN: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. N. American Technical Support: 800−282−9855 Toll Free USA/Canada http://onsemi.com 8 1PMT5920B/D