ONSEMI T2322BG

T2322B
Sensitive Gate Triacs
Silicon Bidirectional Thyristors
Designed primarily for ac power switching. The gate sensitivity of
these triacs permits the use of economical transistorized or integrated
circuit control circuits, and it enhances their use in low-power phase
control and load-switching applications.
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TRIACS
2.5 AMPERES RMS
200 VOLTS
Features
•
•
•
•
•
Very High Gate Sensitivity
Low On-State Voltage at High Current Levels
Glass-Passivated Chip for Stability
Small, Rugged Thermopad Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
Pb−Free Package is Available*
MT2
MT1
G
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive Off-State Voltage (Note 1)
(TJ = 25 to 110°C, Gate Open)
VDRM,
VRRM
200
V
On-State RMS Current (TC = 70°C)
(Full Cycle Sine Wave 50 to 60 Hz)
IT(RMS)
2.5
A
Peak Non−Repetitive Surge Current (One
Full Cycle, Sine Wave 60 Hz, TC = 70°C)
ITSM
25
A
Circuit Fusing Consideration (t = 8.3 ms)
I2t
2.6
A2s
PGM
10
W
PG(AV)
0.5
W
Peak Gate Current
(Pulse Width = 10 ms, TC = 70°C)
IGM
0.5
A
Operating Junction Temperature Range
TJ
−40 to +110
°C
Storage Temperature Range
Tstg
−40 to +150
°C
−
8.0
in. lb.
3
Peak Gate Power
(Pulse Width ≤ 10 ms, TC = 70°C)
Average Gate Power (t = 8.3 ms, TC = 70°C)
Mounting Torque (6-32 Screw) (Note 2)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
2. Torque rating applies with use of torque washer (Shakeproof WD19523 or
equivalent). Mounting Torque in excess of 6 in. lb. does not appreciably
lower case-to-sink thermal resistance. Main terminal 2 and heat-sink
contact pad are common.
TO−225AA
(formerly TO−126)
CASE 077
STYLE 5
2 1
MARKING DIAGRAM
YWW
T
2322BG
Y
WW
T2322B
G
= Year
= Work Week
= Device Code
= Pb−Free Package
PIN ASSIGNMENT
1
Main Terminal 1
2
Main Terminal 2
3
Gate
ORDERING INFORMATION
Device
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
May, 2006 − Rev. 5
1
Package
Shipping
T2322B
TO225AA
500 Units/Box
T2322BG
TO225AA
(Pb−Free)
500 Units/Box
Publication Order Number:
T2322/D
T2322B
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
Characteristic
RqJC
3.5
°C/W
Thermal Resistance, Junction−to−Ambient
RqJA
60
°C/W
TL
260
°C
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Sec
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
Unit
−
−
−
0.2
10
0.75
mA
mA
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
TJ = 25°C
TJ = 110°C
IDRM,
IRRM
ON CHARACTERISTICS
Peak On-State Voltage (Note 3)
(ITM = "10 A)
VTM
−
1.7
2.2
V
Gate Trigger Current (Continuous dc)
(VD = 12 V, RL = 100 W)
All Quadrants
IGT
−
−
10
mA
Gate Trigger Voltage (Continuous dc)
(VD = 12 Vdc, RL = 100 W, TC = 25°C)
VGT
−
1.0
2.2
V
Gate Non−Trigger Voltage
(VD = 12 V, RL = 100 W, TC = 110°C)
VGD
0.15
−
−
V
Holding Current
(VD = 12 V, IT (Initiating Current) = "200 mA, Gate Open)
IH
−
15
30
mA
Gate Controlled Turn-On Time
(VD = Rated VDRM, ITM = 10 A pk, IG = 60 mA, tr = 0.1 msec)
tgt
−
1.8
2.5
ms
dv/dt
10
100
−
V/ms
dv/dt(c)
1.0
4.0
−
V/ms
DYNAMIC CHARACTERISTICS
Critical Rate-of-Rise of Off-State Voltage
(VD = Rated VDRM, Exponential Waveform, TC = 100°C)
Critical Rate-of-Rise of Commutation Voltage
(VD = Rated VDRM, ITM = 3.5 A pk, Commutating
di/dt = 1.26 A/ms, Gate Unenergized, TC = 90°C)
3. Pulse Test: Pulse Width ≤ 1.0 ms, Duty Cycle ≤ 2%.
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2
T2322B
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Symbol
Parameter
VDRM
Peak Repetitive Forward Off State Voltage
IDRM
Peak Forward Blocking Current
VRRM
Peak Repetitive Reverse Off State Voltage
IRRM
Peak Reverse Blocking Current
VTM
Maximum On State Voltage
IH
Holding Current
VTM
on state
IH
IRRM at VRRM
off state
IH
Quadrant 3
MainTerminal 2 −
VTM
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
Quadrant II
(+) MT2
Quadrant I
(+) IGT
GATE
(−) IGT
GATE
MT1
MT1
REF
REF
IGT −
+ IGT
(−) MT2
Quadrant III
Quadrant 1
MainTerminal 2 +
(−) MT2
Quadrant IV
(+) IGT
GATE
(−) IGT
GATE
MT1
MT1
REF
REF
−
MT2 NEGATIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in−phase signals (using standard AC lines) quadrants I and III are used.
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3
+ Voltage
IDRM at VDRM
T2322B
PACKAGE DIMENSIONS
TO−225
CASE 77−09
ISSUE Z
−B−
U
F
Q
−A−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 077−01 THRU −08 OBSOLETE, NEW STANDARD
077−09.
C
M
1 2 3
H
DIM
A
B
C
D
F
G
H
J
K
M
Q
R
S
U
V
K
J
V
G
S
R
0.25 (0.010)
A
M
M
B
M
D 2 PL
0.25 (0.010)
M
A
M
B
M
INCHES
MIN
MAX
0.425
0.435
0.295
0.305
0.095
0.105
0.020
0.026
0.115
0.130
0.094 BSC
0.050
0.095
0.015
0.025
0.575
0.655
5 _ TYP
0.148
0.158
0.045
0.065
0.025
0.035
0.145
0.155
0.040
−−−
MILLIMETERS
MIN
MAX
10.80
11.04
7.50
7.74
2.42
2.66
0.51
0.66
2.93
3.30
2.39 BSC
1.27
2.41
0.39
0.63
14.61
16.63
5 _ TYP
3.76
4.01
1.15
1.65
0.64
0.88
3.69
3.93
1.02
−−−
STYLE 5:
PIN 1. MT 1
2. MT 2
3. GATE
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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T2322/D