T2500D Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies. • Blocking Voltage 400 Volts • All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability • Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability • High Surge Current Capability 60 Amps Peak at TC = 80°C • Device Marking: Logo, Device Type, e.g., T2500D, Date Code http://onsemi.com TRIACS 6 AMPERES RMS 400 VOLTS MT2 MT1 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) G Rating Symbol Value Unit Peak Repetitive Off–State Voltage(1) (Sine Wave 50 to 60 Hz, TJ = –40 to +100°C, Gate Open) VDRM, VRRM 400 Volts On–State RMS Current (TC = +80°C) (Full Cycle Sine Wave 50 to 60 Hz) IT(RMS) 6.0 A ITSM 60 A I2t 15 A2s PGM 16 Watts Average Gate Power (TC = +80°C, t = 8.3 ms) PG(AV) 0.2 Watt Peak Gate Current (Pulse Width = 10 µsec) IGM 4.0 A TJ – 40 to +125 °C Tstg – 40 to +150 °C Peak Non–repetitive Surge Current (One Full Cycle, 60 Hz, TC = +80°C) Circuit Fusing Considerations (t = 8.3 ms) Peak Gate Power (TC = +80°C, Pulse Width = 10 µsec) Operating Junction Temperature Range Storage Temperature Range 4 1 TO–220AB CASE 221A STYLE 4 1 Main Terminal 1 2 Main Terminal 2 3 Gate 4 Main Terminal 2 ORDERING INFORMATION Device T2500D February, 2000 – Rev. 2 3 PIN ASSIGNMENT (1) VDRM, VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Semiconductor Components Industries, LLC, 1999 2 1 Package Shipping TO220AB 500/Box Publication Order Number: T2500/D T2500D THERMAL CHARACTERISTICS Characteristic Thermal Resistance — Junction to Case Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds Symbol Value Unit RθJC 2.7 °C/W TL 260 °C ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit IDRM, IRRM — — 10 2.0 µA mA Peak On-State Voltage* (ITM = 30 A Peak) VTM — — 2.0 Volts Gate Trigger Current (Continuous dc) (VD = 12 Vdc, RL = 100 Ohms) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) MT2(–), G(+) IGT Gate Trigger Voltage (Continuous dc) (All Four Quadrants) (VD = 12 Vdc, RL = 100 Ohms) Gate Non–Trigger Voltage (VD = 12 V, RL = 100 Ohms, TC = 100°C) OFF CHARACTERISTICS Peak Repetitive Blocking Current (Rated VDRM, VRRM; Gate Open) TJ = 25°C TJ = 100°C ON CHARACTERISTICS " mA — — — — 10 20 15 30 25 60 25 60 VGT — 1.25 2.5 Volts VGD 0.2 — — Volts Holding Current (Main Terminal Voltage = 12 Vdc, Gate Open, Initiating Current = 200 mA) IH — 15 30 mA Gate Controlled Turn-On Time (Rated VDRM, IT = 10 A , IGT = 160 mA, Rise Time = 0.1 µs) tgt — 1.6 — µs dv/dt(c) — 10 — V/µs dv/dt — 75 — V/µs " DYNAMIC CHARACTERISTICS Critical Rate-of-Rise of Commutation Voltage (Rated VDRM, IT(RMS) = 6 A, Commutating di/dt = 3.2 A/ms, Gate Unenergized, TC = 80°C) Critical Rate-of-Rise of Off-State Voltage (Rated VDRM, Exponential Voltage Rise, Gate Open, TC = 100°C) * Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. http://onsemi.com 2 T2500D Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Symbol Parameter VDRM IDRM Peak Forward Blocking Current VRRM IRRM VTM IH VTM Peak Repetitive Forward Off State Voltage Quadrant 1 MainTerminal 2 + on state IH IRRM at VRRM Peak Repetitive Reverse Off State Voltage Peak Reverse Blocking Current Maximum On State Voltage off state IH Holding Current Quadrant 3 VTM MainTerminal 2 – Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) + (+) MT2 Quadrant II (+) MT2 Quadrant I (+) IGT GATE (–) IGT GATE MT1 MT1 REF REF IGT – + IGT (–) MT2 (–) MT2 Quadrant III Quadrant IV (+) IGT GATE (–) IGT GATE MT1 MT1 REF REF – MT2 NEGATIVE (Negative Half Cycle) All polarities are referenced to MT1. With in–phase signals (using standard AC lines) quadrants I and III are used. http://onsemi.com 3 + Voltage IDRM at VDRM T2500D PACKAGE DIMENSIONS TO–220AB CASE 221A–07 ISSUE Z –T– B F SEATING PLANE C T S 4 Q A U 1 2 3 H K Z R L V J G D N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ––– ––– 0.080 STYLE 4: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.36 0.55 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ––– ––– 2.04 MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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