ONSEMI MAC224A4

MAC224A Series
Preferred Device
Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications such as
lighting systems, heater controls, motor controls and power supplies.
• Blocking Voltage to 800 Volts
• All Diffused and Glass-Passivated Junctions for Parameter Uniformity
and Stability
• Gate Triggering Guaranteed in Four Modes
• High Current and Surge Ratings
• Device Marking: Logo, Device Type, e.g., MAC224A4, Date Code
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TRIACS
40 AMPERES RMS
200 thru 800 VOLTS
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
MT2
Rating
Symbol
Value
Peak Repetitive Off–State Voltage(1)
(TJ = –40 to 125°C, Sine Wave 50 to
60 Hz, Gate Open)
MAC224A4
MAC224A6
MAC224A8
MAC224A10
VDRM,
VRRM
On–State RMS Current (TC = 75°C)(2)
(Full Cycle Sine Wave 50 to 60 Hz)
IT(RMS)
40
A
Peak Non–repetitive Surge Current
(One Full Cycle, 60 Hz, TJ = 125°C)
ITSM
350
A
I2t
500
A2s
Peak Gate Current
(Pulse Width
2.0 µsec; TC = 75°C)
IGM
"2.0
A
Peak Gate Voltage
(Pulse Width
2.0 µsec; TC = 75°C)
VGM
"10
Volts
Peak Gate Power
(Pulse Width
2.0 µsec; TC = 75°C)
PGM
20
Watts
PG(AV)
0.5
Watts
TJ
– 40 to 125
°C
Tstg
– 40 to 150
°C
—
8.0
in. lb.
MT1
Unit
G
Volts
200
400
600
800
4
1
Circuit Fusing Considerations
(t = 8.3 ms)
v
v
v
Average Gate Power
(TC = 75°C, t = 8.3 ms)
Operating Junction Temperature Range
Storage Temperature Range
Mounting Torque
(2) This device is rated for use in applications subject to high surge conditions.
Care must be taken to insure proper heat sinking when the device is to be
used at high sustained currents. (See Figure 1 for maximum case
temperatures.)
February, 2000 – Rev. 1
3
TO–220AB
CASE 221A
STYLE 4
PIN ASSIGNMENT
(1) VDRM, VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
 Semiconductor Components Industries, LLC, 1999
2
1
1
Main Terminal 1
2
Main Terminal 2
3
Gate
4
Main Terminal 2
ORDERING INFORMATION
Device
Package
Shipping
MAC224A4
TO220AB
500/Box
MAC224A6
TO220AB
500/Box
MAC224A8
TO220AB
500/Box
MAC224A10
TO220AB
500/Box
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MAC224A/D
MAC224A Series
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
Symbol
Value
Unit
RθJC
RθJA
1.0
60
°C/W
TL
260
°C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Symbol
Characteristic
Min
Typ
Max
Unit
—
—
—
—
10
2.0
µA
mA
—
1.4
1.85
Volts
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(Rated VDRM, VRRM; Gate Open)
TJ = 25°C
TJ = 125°C
IDRM,
IRRM
ON CHARACTERISTICS
Peak On–State Voltage
(ITM = 56 A Peak, Pulse Width
"
VTM
p 2 ms, Duty Cycle p 2%)
Gate Trigger Current (Continuous dc)
(VD = 12 V, RL = 100 Ω)
MT2(+), G(+); MT2(+), G(–); MT2(+), G(–)
MT2(–), G(+)
IGT
Gate Trigger Voltage (Continuous dc)
(VD = 12 V, RL = 100 Ω)
MT2(+), G(+); MT2(–), G(–); MT(+), G(–)
MT2(–), G(+)
VGT
Gate Non-Trigger Voltage
(VD = 12 V, TJ = 125°C, RL = 100 Ω)
All Quadrants
Holding Current
(VD = 12 Vdc, Gate Open, Initiating Current =
mA
—
—
"200 mA)
Gate Controlled Turn-On Time
(VD = Rated VDRM, ITM = 56 A Peak, IG = 200 mA)
25
40
50
75
Volts
—
—
1.1
1.3
2.0
2.5
VGD
0.2
—
—
Volts
IH
—
30
75
mA
tgt
—
1.5
—
µs
dv/dt
—
50
—
V/µs
dv/dt(c)
—
5.0
—
V/µs
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off-State Voltage
(VD = Rated VDRM, Exponential Waveform, TC = 125°C)
Critical Rate of Rise of Commutation Voltage
(VD = Rated VDRM, ITM = 56 A Peak, Commutating
di/dt = 20.2 A/ms, Gate Unenergized, TC = 75°C)
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2
MAC224A Series
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Symbol
Parameter
VDRM
IDRM
Peak Forward Blocking Current
VRRM
IRRM
VTM
IH
VTM
Peak Repetitive Forward Off State Voltage
Quadrant 1
MainTerminal 2 +
on state
IH
IRRM at VRRM
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
Maximum On State Voltage
off state
IH
Holding Current
Quadrant 3
VTM
MainTerminal 2 –
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
Quadrant II
(+) MT2
Quadrant I
(+) IGT
GATE
(–) IGT
GATE
MT1
MT1
REF
REF
IGT –
+ IGT
(–) MT2
(–) MT2
Quadrant III
Quadrant IV
(+) IGT
GATE
(–) IGT
GATE
MT1
MT1
REF
REF
–
MT2 NEGATIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in–phase signals (using standard AC lines) quadrants I and III are used.
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3
+ Voltage
IDRM at VDRM
125
PD , AVERAGE POWER DISSIPATION (WATTS)
T C, MAXIMUM ALLOWABLE CASE TEMPERATURE ( °C)
MAC224A Series
120
115
110
105
100
95
90
85
80
75
0
10
5.0
15
20
25
30
35
60
54
48
42
36
30
24
18
12
6.0
0
40
0
10
5.0
15
20
25
30
35
IT(RMS), RMS ON-STATE CURRENT (AMPS)*
IT(RMS), RMS ON-STATE CURRENT (AMPS)*
Figure 1. RMS Current Derating
Figure 2. On–State Power Dissipation
40
3.0
2.0
NORMALIZED GATE VOLTAGE
NORMALIZED GATE CURRENT
*This device is rated for use in applications subject to high surge conditions. Care must be taken to insure proper heat sinking when the device
is to be used at high sustained currents.
VD = 12 V
RL = 100 Ω
1.0
0.5
0.3
0.2
0.1
–60
–40
–20
0
20
40
60
80
100
120
140
3.0
2.0
VD = 12 V
RL = 100 Ω
1.0
0.5
0.3
0.2
0.1
–60
TJ, JUNCTION TEMPERATURE (°C)
–40
–20
0
20
40
60
80
100
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. Typical Gate Trigger Current
Figure 4. Typical Gate Trigger Voltage
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4
120 140
2.0
ITM = 200 mA
Gate Open
1.0
0.5
0.3
0.2
0.1
–60
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
I TM, INSTANTANEOUS ON-STATE CURRENT (AMPS)
NORMALIZED HOLD CURRENT
MAC224A Series
–40
–20
0
20
40
60
80
100
120
140
1000
100
TJ = 25°C
10
1.0
0
1.0
2.0
3.0
TJ, JUNCTION TEMPERATURE (°C)
VTM, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
Figure 5. Typical Holding Current
Figure 6. Typical On–State Characteristics
1
0.5
0.2
ZθJC(t) = r(t) • RθJC
0.1
0.05
0.02
0.01
0.1
0.2
0.5
1
2
5
20
50
100
t, TIME (ms)
Figure 7. Thermal Response
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5
200
500
1k
2k
5k
10 k
MAC224A Series
PACKAGE DIMENSIONS
TO–220AB
CASE 221A–07
ISSUE Z
–T–
B
F
T
SEATING
PLANE
C
S
4
Q
A
U
1 2 3
H
K
Z
R
L
V
J
G
D
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.014
0.022
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
–––
–––
0.080
STYLE 4:
PIN 1.
2.
3.
4.
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6
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.36
0.55
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
–––
–––
2.04
MAIN TERMINAL 1
MAIN TERMINAL 2
GATE
MAIN TERMINAL 2
MAC224A Series
Notes
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7
MAC224A Series
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
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MAC224A/D