Order this document by BF959/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon COLLECTOR 1 3 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 20 Vdc Collector – Base Voltage VCBO 30 Vdc Emitter – Base Voltage VEBO 3.0 Vdc Collector Current — Continuous IC 100 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Watt mW/°C TJ, Tstg – 55 to +150 °C Symbol Max Unit Operating and Storage Junction Temperature Range 1 2 3 CASE 29–04, STYLE 21 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Collector – Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO 20 — — Vdc Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO 30 — — Vdc Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 3.0 — — Vdc ICBO — — 100 nAdc 35 40 — — — — Characteristic OFF CHARACTERISTICS Collector Cutoff Current (VCB = 20 Vdc, IE = 0) ON CHARACTERISTICS DC Current Gain (IC = 5.0 mAdc, VCE = 10 Vdc) (IC = 20 mAdc, VCE = 10 Vdc) hFE — Collector – Emitter Saturation Voltage (IC = 30 mAdc, IB = 2.0 mAdc) VCE(sat) — — 1.0 Vdc Base – Emitter Saturation Voltage (IC = 30 mAdc, IB = 2.0 mAdc) VBE(sat) — — 1.0 Vdc 700 600 — — — — Cre — 0.65 — pF Nf — 3.0 — dB SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) (IC = 30 mAdc, VCE = 10 Vdc, f = 100 MHz) Common Emitter Feedback Capacitance (VCB = 10 Vdc, Pf = 0, f = 10 MHz) Noise Figure (IC = 4.0 mA, VCE = 10 V, RS = 50 Ω, f = 200 MHz) Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 fT MHz 1 BF959 500 1000 200 200 100 mV hFE , DC CURRENT GAIN 500 100 50 40 30 50 40 30 20 20 1 2 3 4 5 10 20 30 50 10 100 2 3 4 5 10 20 IC, COLLECTOR CURRENT (mA) Figure 1. hFE at 10 V Figure 2. VCE(sat) at IC/IB = 10 2.0 1.8 1.8 1.6 1.6 1.4 1.4 1.2 1 0.8 2V 0.6 0.4 1 IC, COLLECTOR CURRENT (mA) C, CAPACITANCE (pF) f T, CURRENT–GAIN — BANDWIDTH PRODUCT (GHz) 10 10 V 5V 30 50 50 100 1.2 Cib 1 0.8 Cob 0.6 Cre 0.4 0.2 1 2 3 4 5 10 20 30 40 50 100 1 2 3 4 5 10 20 30 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 3. Current–Gain — Bandwidth Product Figure 4. Capacitances 10 500 b22e 300 g11e 5 4 3 200 g22e VCE = 10 V VCE = 10 V Y22e ( µs) Y11e (ms) 2 b11e 1 0.5 0.4 0.3 2 50 40 30 20 0.2 0.1 100 10 1 2 3 4 5 10 20 30 50 100 1 2 3 4 5 10 20 30 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. Input Impedance at 30 MHz Figure 6. Output Impedance at 30 MHz 50 Motorola Small–Signal Transistors, FETs and Diodes Device Data BF959 PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K D J X X G H V C 1 SECTION X–X N N CASE 029–04 (TO–226AA) ISSUE AD Motorola Small–Signal Transistors, FETs and Diodes Device Data DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– STYLE 21: PIN 1. COLLECTOR 2. EMITTER 3. BASE 3 BF959 Motorola reserves the right to make changes without further notice to any products herein. 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