Order this document by BC559B/D SEMICONDUCTOR TECHNICAL DATA PNP Silicon COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC559x BC560C Unit Collector – Emitter Voltage VCEO –30 –45 Vdc Collector – Base Voltage VCBO –30 –50 Vdc Emitter – Base Voltage VEBO –5.0 Vdc Collector Current — Continuous IC –100 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Watt mW/°C TJ, Tstg – 55 to +150 °C Symbol Max Unit Operating and Storage Junction Temperature Range 3 CASE 29–04, STYLE 17 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit –30 –45 — — — — –30 –50 — — — — –5.0 — — Vdc — — — — –15 –5.0 nAdc µAdc — — –15 nAdc OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = –10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = –10 µAdc, IE = 0) V(BR)CEO BC559B, C BC560C Vdc V(BR)CBO BC559B, C BC560C Emitter – Base Breakdown Voltage (IE = –10 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = –30 Vdc, IE = 0) (VCB = –30 Vdc, IE = 0, TA = +125°C) ICBO Emitter Cutoff Current (VEB = –4.0 Vdc, IC = 0) IEBO Vdc replaces BC559/D Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1997 1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Symbol Characteristic Min Typ Max Unit 100 100 180 380 150 270 290 500 — — 460 800 — — — –0.075 –0.3 –0.25 –0.25 –0.6 — — –1.1 — — — –0.55 –0.52 –0.55 –0.62 — — –0.7 fT — 250 — MHz Ccbo — 2.5 — pF 240 450 330 600 500 900 — — 0.5 — 2.0 10 ON CHARACTERISTICS DC Current Gain (IC = –10 µAdc, VCE = –5.0 Vdc) (IC = –2.0 mAdc, VCE = –5.0 Vdc) hFE BC559B BC559C/560C BC559B BC559C/560C Collector – Emitter Saturation Voltage (IC = –10 mAdc, IB = –0.5 mAdc) (IC = –10 mAdc, IB = see note 1) (IC = –100 mAdc, IB = –5.0 mAdc, see note 2) VCE(sat) Base–Emitter Saturation Voltage (IC = –100 mAdc, IB = –5.0 mAdc) VBE(sat) Base–Emitter On Voltage (IC = –10 µAdc, VCE = –5.0 Vdc) (IC = –100 µAdc, VCE = –5.0 Vdc) (IC = –2.0 mAdc, VCE = –5.0 Vdc) VBE(on) — Vdc Vdc Vdc SMALL–SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = –10 mAdc, VCE = –5.0 Vdc, f = 100 MHz) Collector–Base Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz) Small–Signal Current Gain (IC = –2.0 mAdc, VCE = –5.0 V, f = 1.0 kHz) hfe BC559B BC559C/BC560C Noise Figure (IC = –200 µAdc, VCE = –5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz) (IC = –200 µAdc, VCE = –5.0 Vdc, RS = 100 kΩ, f = 1.0 kHz, ∆f = 200 kHz) — dB NF1 NF2 NOTES: 1. IB is value for which IC = –11 mA at VCE = –1.0 V. 2. Pulse test = 300 µs – Duty cycle = 2%. 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data –1.0 VCE = –10 V TA = 25°C 1.5 –0.9 1.0 0.8 0.6 0.4 VBE(sat) @ IC/IB = 10 –0.7 VBE(on) @ VCE = –10 V –0.6 –0.5 –0.4 –0.3 –0.2 0.3 VCE(sat) @ IC/IB = 10 –0.1 0.2 –0.2 –0.5 0 –0.1 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 IC, COLLECTOR CURRENT (mAdc) Figure 1. Normalized DC Current Gain –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 IC, COLLECTOR CURRENT (mAdc) –50 –100 Figure 2. “Saturation” and “On” Voltages 10 400 300 7.0 200 100 80 60 C, CAPACITANCE (pF) f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz) TA = 25°C –0.8 V, VOLTAGE (VOLTS) hFE, NORMALIZED DC CURRENT GAIN 2.0 VCE = –10 V TA = 25°C 40 30 TA = 25°C Cib 5.0 3.0 Cob 2.0 20 –0.5 –0.7 –1.0 –2.0 –5.0 –7.0 –10 –20 IC, COLLECTOR CURRENT (mAdc) –50 1.0 –0.4 –0.6 –1.0 r b, BASE SPREADING RESISTANCE (OHMS) Figure 3. Current–Gain — Bandwidth Product –2.0 –4.0 –10 VR, REVERSE VOLTAGE (VOLTS) –20 –40 Figure 4. Capacitance 170 160 150 VCE = –10 V f = 1.0 kHz TA = 25°C 140 130 120 –0.1 –0.2 –0.5 –1.0 –2.0 IC, COLLECTOR CURRENT (mAdc) –5.0 –10 Figure 5. Base Spreading Resistance Motorola Small–Signal Transistors, FETs and Diodes Device Data 3 PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K DIM A B C D F G H J K L N P R V D J X X G H V C 1 SECTION X–X N N CASE 029–04 (TO–226AA) ISSUE AD INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER Motorola reserves the right to make changes without further notice to any products herein. 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