FAIRCHILD KSC5020

KSC5020
KSC5020
High Voltage, High Quality
• High Speed Switching : tF=0.1µs
• Wide SOA
TO-220
1
1.Base
2.Collector
3.Emitter
NPN Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Parameter
Collector-Base Voltage
Value
800
Units
V
500
V
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current (DC)
3
A
A
ICP
Collector Current (Pulse)
6
IB
Base Current (DC)
1
A
PC
Collector Dissipation (TC=25°C)
40
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 55 ~ 150
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
BVCBO
Parameter
Collector-Base Breakdown Voltage
Test Condition
IC = 1mA, IE = 0
Min.
800
Typ.
Max.
BVCEO
Collector-Emitter Breakdown Voltage
IC = 5mA, IB = 0
500
V
BVEBO
Emitter-Base Breakdown Voltage
IE = 1mA, IC = 0
7
V
VCEX(sus)
Collector-Emitter Sustaining Voltage
IC = 1.5A, IB1=-IB2= 0.6A
L = 2mH, Clamped
500
V
ICBO
Collector Cut-off Current
VCB = 500V, IE = 0
10
µA
IEBO
Emitter Cut-off Current
VEB = 5V, IC = 0
10
µA
hFE1
hFE2
DC Current Gain
VCE = 5V, IC = 0.3A
VCE = 5V, IC = 1.5A
15
8
Units
V
50
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 1.5A, IB = 0.3A
1
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 1.5A, IB = 0.3A
1.5
V
Cob
Output Capacitance
VCB = 10V, f = 1MHz
50
pF
fT
Current Gain Bandwidth Product
VCE = 10V, IC = 0.3A
18
MHz
VCC = 200V
IC=5IB1 = -2.5IB2=2A
RL = 100Ω
tON
Turn On Time
tSTG
Storage Time
tF
Fall Time
0.5
µs
3
µs
0.3
µs
hFE Classification
Classification
R
O
Y
hFE1
15 ~ 30
20 ~ 40
30 ~ 50
©2002 Fairchild Semiconductor Corporation
Rev. B1, December 2002
KSC5020
Typical Characteristics
1000
4
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
5
IB = 500mA
3
IB = 400mA
IB = 300mA
IB = 200mA
2
IB = 100mA
IB = 50mA
1
100
10
IB = 20mA
IB = 0
0
0
2
4
6
8
1
0.01
10
0.1
VCE[V], COLLECTOR-EMITTER VOLTAGE
10
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
10
10
VCC= 200V
IC= 5IB1= -2.5IB2
IC = 5 IB
tON, tSTG, tF [µs], TIME
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
1
VBE(sat)
1
0.1
VCE(sat)
0.01
0.01
0.1
1
tSTG
1
tON
tF
0.1
0.01
0.1
10
1
10
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Figure 4. Turn On, Storage and Fall Time vs.
Collector Current
4
100
1
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VBE[V], BASE-EMITTER VOLTAGE
Figure 5. Base-Emitter On Voltage
©2002 Fairchild Semiconductor Corporation
1.6
50µs
ICP(max)
IC(max)
P=
C 4
0W
1
s
2
10
0µ
10
IC[A], COLLECTOR CURRENT
3
s
1m s
m
10
IC[A], COLLECTOR CURRENT
VCE = 5V
DC
0.1
0.01
1E-3
1
10
100
1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 6. Forward Bias Safe Operating Area
Rev. B1, December 2002
KSC5020
Typical Characteristics (Continued)
50
IB2 = -0.6A
L = 200µH
PC[W], POWER DISSIPATION
IC[A], COLLECTOR CURRENT
10
1
0.1
40
30
20
10
0
0.01
10
100
1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 7. Reverse Bias Safe Operating Area
©2002 Fairchild Semiconductor Corporation
0
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
Figure 8. Power Derating
Rev. B1, December 2002
KSC5020
Package Dimensions
TO-220
4.50 ±0.20
2.80 ±0.10
(3.00)
+0.10
1.30 –0.05
18.95MAX.
(3.70)
ø3.60 ±0.10
15.90 ±0.20
1.30 ±0.10
(8.70)
(1.46)
9.20 ±0.20
(1.70)
9.90 ±0.20
1.52 ±0.10
0.80 ±0.10
2.54TYP
[2.54 ±0.20]
10.08 ±0.30
(1.00)
13.08 ±0.20
)
(45°
1.27 ±0.10
+0.10
0.50 –0.05
2.40 ±0.20
2.54TYP
[2.54 ±0.20]
10.00 ±0.20
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. B1, December 2002
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
FACT™
ActiveArray™
FACT Quiet series™
Bottomless™
FAST®
FASTr™
CoolFET™
CROSSVOLT™ FRFET™
GlobalOptoisolator™
DOME™
EcoSPARK™
GTO™
E2CMOS™
HiSeC™
EnSigna™
I2C™
Across the board. Around the world.™
The Power Franchise™
Programmable Active Droop™
ImpliedDisconnect™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
SILENT SWITCHER®
SMART START™
SPM™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET®
VCX™
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. I1