FMM5701X 24GHz Low Noise Amplifier MMIC FEATURES • Low Noise Figure: NF=1.4dB (Typ.) @ f=24GHz • High Associated Gain: Gas=13.5dB (Typ.) @ f=24GHz • Wide Frequency Band: 18-28GHz DESCRIPTION The FMM5701X is a LNA MMIC designed for applications in the 18-28GHz frequency range. This product is well suited for satellite communications and radio link applications where low noise and high gain is required. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Condition Symbol Rating Unit Drain Voltage VDD 7.0 V Gate Voltage VGG -3.0 V Storage Temperature Tstg -65 to +175 °C Channel Temperature Tch +175 °C ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Conditions (2) Symbol NF Noise Figure Min. Limits Typ. Max. Unit f=24GHz - 1.5 1.8 dB f=24GHz 12.0 13.5 - dB VDD = 5V ID=12mA Gas Associated Gain Note 1: RF parameters sample size 10pcs. criteria (accept/reject = (2/3) Note 2: Tuned for Γopt NOISE FIGURE & Gas vs. FREQUENCY VDD=5V, IDD=12mA (ZS=ZL=50Ω) (Tuned for Γopt) 10 30 25 9 7 15 6 10 5 5 0 4 NF 3 -5 2 -10 1 -15 0 10 12 14 16 18 20 22 Frequency (GHz) Edition 1.2 January 2000 20 Gas 1 24 26 28 0 30 Gas (dB) Noise Figure (dB) 8 FMM5701X 24GHz Low Noise Amplifier MMIC S-PARAMETERS VDD = 5V, IDS = 12mA FREQUENCY (MHZ) S11 S21 S12 S22 MAG ANG MAG ANG MAG ANG MAG ANG 15000 .469 -131.8 8.289 130.9 .017 23.3 .350 -132.7 16000 .492 -137.9 7.642 115.7 17000 .512 -145.8 6.987 101.5 .018 16.6 .330 -138.4 .020 10.9 .311 -144.1 18000 .542 -153.9 6.487 87.3 .021 7.0 .296 -149.0 19000 .568 -162.7 5.950 73.6 .023 2.3 .287 -154.2 20000 .598 -172.5 5.456 60.1 .025 -3.6 .283 -160.2 21000 .615 178.2 5.027 47.5 .026 -7.5 .273 -165.6 22000 .640 168.3 4.634 34.5 .028 -10.9 .268 -170.8 23000 .663 158.5 4.258 22.0 .030 -15.1 .265 -176.5 24000 .683 148.6 3.919 9.9 .032 -17.9 .262 178.5 25000 .702 138.7 3.638 -2.2 .035 -21.1 .265 172.7 26000 .722 128.8 3.318 -14.3 .038 -27.0 .267 166.4 27000 .732 119.0 3.033 -25.1 .040 -28.3 .265 162.1 28000 .737 109.4 2.820 -35.8 .044 -31.7 .266 155.5 29000 .756 99.4 2.595 -47.7 .048 -37.4 .271 150.6 30000 .762 90.3 2.370 -57.4 .051 -40.3 .270 144.9 NOTE:* The data includes bonding wires. n: number of wires RF IN n=1 (0.3mm length, 25µm Dia Au wire) RF OUT n=1 (0.3mm length, 25µm Dia Au wire) GND n=6 (0.3mm length, 25µm Dia Au wire) Download S-Parameters, click here NOISE PARAMETERS VDD=5V, IDD=12mA BONDING LAYOUT RF out and VDD GND 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 GND GND Freq. (GHz) RF in and VGG 2 Γopt (MAG) (ANG) 0.793 0.670 0.582 0.526 0.492 0.475 0.468 0.464 0.458 0.441 0.408 0.352 0.266 0.212 0.202 13.4 26.9 38.5 54.4 69.1 84.7 101.6 120.1 140.4 162.9 -172.2 -144.5 -113.9 -88.5 -58.0 NFmin (dB) Rn 0.78 0.84 0.90 0.97 1.03 1.09 1.16 1.22 1.28 1.35 1.41 1.47 1.54 1.60 1.66 0.47 0.39 0.34 0.27 0.23 0.19 0.14 0.10 0.07 0.05 0.05 0.07 0.11 0.16 0.23 FMM5701X 24GHz Low Noise Amplifier MMIC NOTES 3 FMM5701X 24GHz Low Noise Amplifier MMIC CHIP OUTLINE 80 95 100 25 40 195 GND 60 RF out 10 450 195 GND 80 25 25 95 80 RF in 25 60 195 GND 40 25 100 110 80 Unit: µm 520 For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS EUROPE, GmbH Quantum Devices Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not put these products into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200 4