FUJITSU FMM5046VF

FMM5046VF
GaAs MMIC
FEATURES
•
•
•
•
High Output Power: 36dBm (typ.)
High Linear Gain: 30dB (typ.)
Low Input VSWR
Small Hermetic Metal-Ceramic Package (VF)
DESCRIPTION
The FMM5046VF is a MMIC amplifier designed for PCS/PCN
and W-CDMA applications as a driver or output stage in the
1.7 to 2.3GHz band. The output stage is partially matched
for this device.
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C)
Item
Symbol
Rating
Unit
DC Input Voltage
VDD
12
V
DC Input Voltage
VGG
-7
V
Input Power
Pin
10
dBm
Storage Temperature
Tstg
-55 to +125
°C
Operating Case Temperature
Top
-40 to +70
°C
Fujitsu recommends the following conditions for the reliable operation of GaAs modules:
1. The drain operating voltage (VDD) should not exceed 10 volts.
2. The gate operating voltage (VGG) should not exceed -5 volts.
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25°C)
Item
Frequency Range
Output Power at 1dB G.C.P.
Symbol
Test Conditions
Min.
f
GL
Input VSWR
VSWRi
VDD = 10V
VGG = -5V
f = 2.2GHz
Unit
GHz
2.2
P1dB
Linear Gain
Limit
Typ. Max.
35.0
36.0
-
dBm
29.0
30.0
-
dB
-
1.5:1
-
-
DC Input Current
IDD
-
1.1
-
A
DC Input Current
IGG
-
35
-
mA
CASE STYLE: VF
Edition 1.5
November 2001
G.C.P.: Gain Compression Point
1
FMM5046VF
GaAs MMIC
IMD vs. OUTPUT POWER
-20
-25
ACPR vs. OUTPUT POWER
VDS=10V,
VGG=-5V,
f1=2.14GHz,
∆f=10MHz,
-25
-30
-35
ACPR (dBc)
IMD (dBc)
-30
-35
-40
-45
VDS=10V,
VGG=-5V,
f1=2.14GHz,
W-CDMA,
Single Signal
-40
5MHz
-45
-50
-50
-55
-55
-60
-60
-65
10MHz
20
22
24
26
28
30
32
-70
34
18
20 22
Total Output Power (dBm)
OUTPUT POWER & IDSRF vs. INPUT POWER
VDS=10V,
VGG=-5V
38
38
36
36
6dBm
34
2dBm
32
30
-2dBm
28
26
Output Power (dBm)
10dBm
Output Power (dBm)
32 34
Output Power (dBm)
OUTPUT POWER vs. FREQUENCY
40
24 26 28 30
VDD=10V,
VGG=-5V,
f=2.2GHz
34
32
30
28
2.0
26
1.8
24
1.6
22
1.4
20
1.2
-6dBm
24
22
-10dBm
20
-10 -8
1.9
2.0
2.1
2.2
-6
-4
-2
0
2
4
Input Power (dBm)
2.3
Frequency (GHz)
2
6
8
10
IDS(RF) (A)
18
FMM5046VF
GaAs MMIC
S11
S22
+j50
+j100
+j25
0
2.1
2.2
2.5
2.3
1.9
2.0
1.7
1.8 2.5
2.6
2.1
1.7
2.7GHz
2.7GHz
2.2
10
25
2.6
2.3
2.5 2.4
+j250
100
180°
-j10
2.6
2.7GHz
2.4 2.7GHz
2.0
2.3 1.7
8
16
2.3
24
32
SCALE FOR |S21| 1.8
-j250
0.01
2.2
-j25
1.7
2.4
-j100
2.1
-j50
SCALE FOR |S12|
2.0
1.9
1.8
+j10
S21
S12
+90°
0°
1.9
2.0
0.02
-90°
S-PARAMETERS
VDD = 10V, VGG = -5V
FREQUENCY
S11
(MHZ)
MAG
ANG
1700
1800
1900
2000
2100
2200
2300
2400
2500
2600
2700
2800
2900
.391
.406
.390
.333
.224
.076
.079
.212
.326
.433
.532
.617
.693
153.3
136.9
119.5
100.1
77.6
49.7
-130.6
-151.5
-165.3
-177.1
171.4
160.0
149.0
S21
MAG
ANG
33.278
34.121
36.079
38.154
38.680
36.229
31.303
25.761
21.220
17.159
14.146
11.311
9.165
26.0
-4.1
-36.5
-70.3
-107.1
-145.1
178.7
145.9
116.8
88.5
62.3
36.1
11.7
3
S12
MAG
ANG
.003
.003
.003
.003
.003
.003
.003
.004
.004
.005
.005
.005
.005
100.8
98.4
94.1
91.1
94.1
102.5
110.4
114.8
112.8
105.8
100.0
97.0
91.2
S22
MAG
ANG
.684
.702
.714
.702
.642
.537
.431
.357
.317
.283
.248
.207
.185
144.4
140.4
134.0
125.1
114.9
107.0
104.6
107.3
111.2
114.6
118.4
127.0
143.7
FMM5046VF
GaAs MMIC
Case Style "VF"
17.78±0.15
13.46±0.15
0.5±0.3
INDEX
0.5±0.3
8.38
1.0 MIN
4-C 1.52
6.4
PIN ASSIGNMENT
6
5
4-0.5
Symbol
1.
2.
3.
4.
5.
6.
VDD
RF in
VGG
NC
RF out
VDD
6.63
Pin
4
2-0.3
1.0 MIN
2-R 1.22
8.33±0.25
3
2.44
2
6.63
1
(4-R 0.5)
0.125±0.15
Unit: mm(inches)
1.02±0.15
3.0 MAX
0.3±0.15
0.51±0.15
7.88
0.5±0.15
0.5±0.15
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU MICROELECTRONICS EUROPE, GmbH
Quantum Devices Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
CAUTION
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
• Do not put these products into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 2000 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0200M200
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