MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR08AS LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE CR08AS OUTLINE DRAWING Dimensions in mm 4.4±0.1 1.6±0.2 3 2.5±0.1 2 3.9±0.3 0.8 MIN 1 1.5±0.1 0.5±0.07 0.4 +0.03 –0.05 0.4±0.07 1.5±0.1 1.5±0.1 (Back side) 2 1 T1 TERMINAL 2 T2 TERMINAL 3 GATE TERMINAL 3 1 • IT (AV) ........................................................................ 0.8A • VDRM ..............................................................400V/600V • IGT ......................................................................... 100µA SOT-89 APPLICATION Solid state relay, strobe flasher, ignitor, hybrid IC MAXIMUM RATINGS Symbol Voltage class Parameter 8 (marked “AD”) 12 (marked “AF”) Unit VRRM Repetitive peak reverse voltage 400 600 V VRSM Non-repetitive peak reverse voltage 500 720 V VR (DC) DC reverse voltage 320 480 V VDRM Repetitive peak off-state voltage ✽1 400 600 V VD (DC) DC off-state voltage ✽1 320 480 V Symbol Conditions Parameter IT (RMS) RMS on-state current IT (AV) Average on-state current Commercial frequency, sine half wave, 180° conduction, Ta=51°C✽2 ITSM Surge on-state current 60Hz sine half wave 1 full cycle, peak value, non-repetitive I 2t I2t Value corresponding to 1 cycle of half wave 60Hz, surge on-state current PGM PG (AV) VFGM Ratings Unit 1.26 A 0.8 A 10 A 0.42 A2s Peak gate power dissipation 0.5 W Average gate power dissipation 0.1 W Peak gate forward voltage 6 V VRGM Peak gate reverse voltage 6 V IFGM Peak gate forward current 0.3 Tj Junction temperature for fusing –40 ~ +125 –40 ~ +125 Storage temperature Tstg — Weight Typical value 48 A °C °C mg ✽1. With Gate-to-cathode resistance RGK =1kΩ Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR08AS LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol Parameter Limits Test conditions Min. Typ. Max. Unit IRRM Repetitive peak reverse current Tj=125°C, V RRM applied, RGK=1kΩ — — 0.5 mA IDRM Repetitive peak off-state current Tj=125°C, V DRM applied, RGK=1kΩ — — 0.5 mA VTM On-state voltage Ta=25°C, I TM=2.5A, instantaneous value — — 1.5 V VGT Gate trigger voltage Ta=25°C, V D =6V, IT =0.1A ✽4 — — 0.8 V VGD Gate non-trigger voltage Tj=125°C, VD=1/2VDRM, RGK=1kΩ 0.2 — — IGT Gate trigger current Tj=25°C, VD =6V, IT=0.1A ✽4 1 — IH Holding current Tj=25°C, VD=12V, RGK=1kΩ — 1.5 3 mA R th (j-a) Thermal resistance Junction to ambient ✽2 — — 65 °C/W 100 ✽3 V µA ✽2. Soldering with ceramic plate (25mm × 25mm × t0.7). ✽3. If special values of I GT are required, choose at least two items from those listed in the table below. (Example: AB, BC) Item A B C IGT (µA) 1 ~ 30 20 ~ 50 40 ~ 100 The above values do not include the current flowing through the 1kΩ resistance between the gate and cathode. ✽4. IGT, VGT measurement circuit. A1 3V DC IGS IGT A3 A2 60Ω TUT 6V DC V1 RGK 1 2 VGT 1kΩ SWITCH SWITCH 1 : IGT measurement SWITCH 2 : VGT measurement (Inner resistance of voltage meter is about 1kΩ) MAXIMUM ON-STATE CHARACTERISTICS 102 7 Ta = 25°C 5 3 2 101 7 5 3 2 100 7 5 3 2 10–1 0 1 2 3 4 ON-STATE VOLTAGE (V) 5 RATED SURGE ON-STATE CURRENT 10 SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) PERFORMANCE CURVES 9 8 7 6 5 4 3 2 1 0 100 2 3 4 5 7 101 2 3 4 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR08AS LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 102 GATE VOLTAGE (V) 7 5 3 2 VFGM = 6V 101 7 5 3 2 PGM = 0.5W PG(AV) = 0.1W VGT = 0.8V 100 7 5 3 2 IGT = 100µA (Tj = 25°C) 10–1 7 5 3 2 VGD = 0.2V IFGM = 0.3A 10–2 10–2 2 3 5710–12 3 57100 2 3 57101 2 3 57102 2 3 GATE TRIGGER CURRENT (Tj = t°C) GATE TRIGGER CURRENT (Tj = 25°C) 100 (%) GATE CHARACTERISTICS 103 7 TYPICAL EXAMPLE 5 3 2 102 7 5 3 2 101 7 5 3 2 100 –40 –20 0 20 40 60 80 100 120 140 160 GATE CURRENT (mA) JUNCTION TEMPERATURE (°C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO AMBIENT) ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, 0.9 DISTRIBUTION 0.8 TYPICAL EXAMPLE 0.7 0.6 0.5 0.4 0.3 0.2 0.1 AVERAGE POWER DISSIPATION (W) 0 –40 –20 0 20 40 60 80 100 120 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 103 7 25 25 t0.7 5 ALUMINUM BOARD 3 WITH SOLDERING 2 102 7 5 3 2 101 7 5 3 2 100 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 JUNCTION TEMPERATURE (°C) TIME (s) MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE HALF WAVE) 1.6 θ = 30° 60° 90° 120° 1.4 180° ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 160 25 25 t0.7 140 ALUMINUM BOARD θ WITH SOLDERING 360° 120 1.2 1.0 0.8 0.6 0.4 θ 0.2 360° 0 0 RESISTIVE, INDUCTIVE LOADS 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 AVERAGE ON-STATE CURRENT (A) AMBIENT TEMPERATURE (°C) GATE TRIGGER VOLTAGE (V) 1.0 TRANSIENT THERMAL IMPEDANCE (°C/W) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE RESISTIVE, INDUCTIVE LOADS NATURAL CONVECTION 100 80 60 θ = 30° 40 60° 120° 20 0 90° 180° 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 AVERAGE ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR08AS LOW POWER USE 100 80 65°C/W 60 90°C/W 40 20 Rth(j – a) = 200°C/W 0 AMBIENT TEMPERATURE (°C) 360° NATURAL CONVECTION θ = 180° 120 0 AVERAGE POWER DISSIPATION (W) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 160 RESISTIVE, INDUCTIVE 140 θ LOADS 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE FULL WAVE) 1.6 θ = 30° 60° 90° 120° 1.4 180° 1.2 1.0 0.8 0.6 0.4 θ 0.2 360° 0 RESISTIVE LOADS 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 AVERAGE ON-STATE CURRENT (A) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) 160 25 25 t0.7 140 ALUMINUM BOARD θ θ WITH SOLDERING 360° 120 MAXIMUM AVERAGE POWER DISSIPATION (RECTANGULAR WAVE) 1.6 90° 180° θ = 30° 60° 120° 270° 1.4 DC RESISTIVE LOADS NATURAL CONVECTION 100 80 60 40 60° 120° θ = 30° 90° 180° 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.2 1.0 0.8 0.6 0 θ = 30° 60° 120° 270° 20 0 90° 0 180° DC 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 AVERAGE ON-STATE CURRENT (A) 0 RESISTIVE, INDUCTIVE LOADS 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 AVERAGE ON-STATE CURRENT (A) BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE 100 (%) 40 360° 0.2 160 BREAKOVER VOLTAGE (T j = t°C) BREAKOVER VOLTAGE (T j = 25°C) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) 160 25 25 t0.7 140 ALUMINUM BOARD θ WITH SOLDERING 360° 120 RESISTIVE, 100 INDUCTIVE LOADS 80 NATURAL CONVECTION 60 θ 0.4 AVERAGE ON-STATE CURRENT (A) AMBIENT TEMPERATURE (°C) 0 θ AVERAGE ON-STATE CURRENT (A) AVERAGE POWER DISSIPATION (W) AMBIENT TEMPERATURE (°C) NON-INSULATED TYPE, GLASS PASSIVATION TYPE 120 TYPICAL EXAMPLE 140 100 RGK = 1kΩ 80 60 40 20 0 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR08AS LOW POWER USE TYPICAL EXAMPLE 80 60 40 20 Tj = 125°C 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 120 100 80 60 40 20 0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) HOLDING CURRENT VS. JUNCTION TEMPERATURE HOLDING CURRENT VS. GATE TO CATHODE RESISTANCE 101 7 DISTRIBUTION TYPICAL EXAMPLE 5 IGT (25°C) = 35µA 3 2 100 7 5 3 2 10–1 7 5 3 2 ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, RGK = 1kΩ 10–2 –60 –40 –20 0 20 40 60 80 100 120 140 4.0 Tj = 25°C 3.5 TURN-ON TIME (µs) 3.0 2.5 2.0 1.5 1.0 0.5 101 GATE TRIGGER CURRENT (µA) TYPICAL EXAMPLE IGT (25°C) IH (1kΩ) # 1 25µA 0.9mA 300 200 #1 100 Tj = 25°C 0 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 GATE TO CATHODE RESISTANCE (kΩ) HOLDING CURRENT VS. GATE TRIGGER CURRENT 0 100 500 400 JUNCTION TEMPERATURE (°C) HOLDING CURRENT (mA) BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 160 TYPICAL EXAMPLE Tj = 125°C RGK = 1kΩ 140 GATE TO CATHODE RESISTANCE (kΩ) 100 (%) HOLDING CURRENT (mA) BREAKOVER VOLTAGE (RGK = rkΩ) BREAKOVER VOLTAGE (RGK = 1kΩ) 100 BREAKOVER VOLTAGE (dv/dt = vV/µs ) BREAKOVER VOLTAGE (dv/dt = 1V/µs ) 120 HOLDING CURRENT (RGK = rkΩ) HOLDING CURRENT (RGK = 1kΩ) 100 (%) BREAKOVER VOLTAGE VS. GATE TO CATHODE RESISTANCE 100 (%) NON-INSULATED TYPE, GLASS PASSIVATION TYPE 102 TURN-ON TIME VS. GATE CURRENT 102 VD = 100V 7 TYPICAL EXAMPLE 5 RL = 47Ω 3 RGK = 1kΩ 2 Ta = 25°C 101 7 5 3 2 100 7 5 3 2 10–1 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 GATE CURRENT (mA) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR08AS LOW POWER USE 40 TURN-OFF TIME (µs) VD = 50V, VR = 50V 35 IT = 2A, RGK = 1kΩ 30 TYPICAL EXAMPLE ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, 25 DISTRIBUTION 20 15 10 5 0 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) REPETITIVE PEAK REVERSE VOLTAGE (Tj = t°C) REPETITIVE PEAK REVERSE VOLTAGE (Tj = 25°C) TURN-OFF TIME VS. JUNCTION TEMPERATURE 100 (%) NON-INSULATED TYPE, GLASS PASSIVATION TYPE REPETITIVE PEAK REVERSE VOLTAGE VS. JUNCTION TEMPERATURE 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) 104 7 5 3 2 Tj = 25°C TYPICAL EXAMPLE IGT (DC) # 1 10µA #1 # 2 65µA #2 103 7 5 3 2 102 7 5 3 2 101 100 2 3 4 5 7 101 2 3 4 5 7 102 GATE CURRENT PULSE WIDTH (µs) THERMAL IMPEDANCE VS. BOARD DIMENSIONS 320 THERMAL IMPEDANCE (°C/W) GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) 100 (%) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 280 240 200 WITHOUT EPOXY PLATE 160 120 80 t0.7 40 10×10 EPOXY PLATE ALUMINUM WITH COPPER FOIL BOARD 0 0 10 20 30 40 50 60 70 80 BOARD DIMENSIONS (mm) REGULAR SQUARE ONE SIDE Feb.1999