To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR05AS LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE CR05AS OUTLINE DRAWING Dimensions in mm 4.4±0.1 1.6±0.2 ➂ 2.5±0.1 ➁ 3.9±0.3 0.8 MIN ➀ 1.5±0.1 0.5±0.07 0.4 +0.03 –0.05 0.4±0.07 1.5±0.1 1.5±0.1 (Back side) ➁ ➀ • IT (AV) ........................................................................ 0.5A • VDRM ..............................................................200V/400V • IGT ......................................................................... 100µA ➀ CATHODE ➁ ANODE ➂ GATE ➂ SOT-89 APPLICATION Solid state relay, strobe flasher, ignitor, hybrid IC MAXIMUM RATINGS Symbol Voltage class Parameter 4 (marked “CB”) 8 (marked “CD”) Unit VRRM Repetitive peak reverse voltage 200 400 V VRSM Non-repetitive peak reverse voltage 300 500 V VR (DC) DC reverse voltage 160 320 V VDRM Repetitive peak off-state voltage ✽1 200 400 V VD (DC) DC off-state voltage ✽1 160 320 V Symbol Conditions Parameter IT (RMS) RMS on-state current IT (AV) Average on-state current Commercial frequency, sine half wave, 180° conduction, Ta=57°C ✽2 ITSM Surge on-state current 60Hz sine half wave 1 full cycle, peak value, non-repetitive I2t I2t Value corresponding to 1 cycle of half wave 60Hz, surge on-state current PGM Peak gate power dissipation PG (AV) Average gate power dissipation VFGM for fusing Ratings Unit 0.79 A 0.5 A 10 A 0.4 A2s 0.1 W 0.01 W Peak gate forward voltage 6 V VRGM Peak gate reverse voltage 6 V IFGM Peak gate forward current 0.1 Tj Junction temperature –40 ~ +125 –40 ~ +125 Storage temperature Tstg — Weight Typical value 48 A °C °C mg ✽1. With Gate-to-cathode resistance RGK =1kΩ Jan.2000 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR05AS LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol Parameter Limits Test conditions Min. Typ. Max. Unit IRRM Repetitive peak reverse current Tj=125°C, V RRM applied — — 0.1 mA IDRM Repetitive peak off-state current Tj=125°C, V DRM applied, RGK=1kΩ — — 0.1 mA VTM On-state voltage Ta=25°C, I TM=1.5A, instantaneous value — — 1.9 V VGT Gate trigger voltage Ta=25°C, V D =6V, IT =0.1A ✽4 — — 0.8 V VGD Gate non-trigger voltage Tj=125°C, VD=1/2VDRM, RGK=1kΩ 0.2 — — IGT Gate trigger current Tj=25°C, VD =6V, IT=0.1A ✽4 1 — IH Holding current Tj=25°C, VD=12V, RGK=1kΩ — — 3 mA R th (j-a) Thermal resistance Junction to ambient ✽2 — — 70 °C/W 100 ✽3 V µA ✽2. Soldering with ceramic plate (25mm × 25mm × t0.7). ✽3. If special values of I GT are required, choose at least two items from those listed in the table below. (Example: AB, BC) Item A B C IGT (µA) 1 ~ 30 20 ~ 50 40 ~ 100 The above values do not include the current flowing through the 1kΩ resistance between the gate and cathode. ✽4. IGT, VGT measurement circuit. A1 3V DC IGS IGT A3 A2 60Ω TUT 6V DC V1 RGK 1 2 VGT 1kΩ SWITCH SWITCH 1 : IGT measurement SWITCH 2 : VGT measurement (Inner resistance of voltage meter is about 1kΩ) MAXIMUM ON-STATE CHARACTERISTICS 102 7 Ta = 25°C 5 3 2 101 7 5 3 2 100 7 5 3 2 10–1 0 1 2 3 4 ON-STATE VOLTAGE (V) 5 RATED SURGE ON-STATE CURRENT 10 SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) PERFORMANCE CURVES 9 8 7 6 5 4 3 2 1 0 100 2 3 4 5 7 101 2 3 4 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) Jan.2000 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR05AS LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 102 VFGM = 6V 101 7 5 3 2 PGM = 0.1W PG(AV) = 0.01W VGT = 0.8V 100 7 5 3 2 IGT = 100µA (Tj = 25°C) 10–1 7 5 3 2 VGD = 0.2V IFGM = 0.1A GATE CURRENT (Tj = t°C) GATE CURRENT (Tj = 25°C) 100 (%) 10–2 10–2 2 3 5 710–12 3 5 7 100 2 3 5 7 101 2 3 5 7 102 101 7 5 3 2 100 –60 –40 –20 0 20 40 60 80 100 120 140 GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE TYPICAL EXAMPLE IGT (25°C) # 1 32µA # 2 9µA #1 #2 120 100 80 60 40 See ∗3 20 1.0 0.9 ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, DISTRIBUTION 0.8 0.7 TYPICAL EXAMPLE 0.6 0.5 0.4 0.3 0.2 0.1 0 –40 –20 0 20 40 60 80 100 120 140 160 0 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) JUNCTION TEMPERATURE (°C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO AMBIENT) 100 103 23 5 7 101 23 5 7 102 23 5 7 103 7 25 25 t0.7 5 ALUMINUM BOARD 3 WITH SOLDERING 2 102 7 5 3 2 101 7 5 3 2 100 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 TIME (s) AVERAGE POWER DISSIPATION (W) TRANSIENT THERMAL IMPEDANCE (°C/W) 102 7 5 3 2 GATE CURRENT VS. JUNCTION TEMPERATURE 180 140 TYPICAL EXAMPLE JUNCTION TEMPERATURE (°C) 200 160 103 7 5 3 2 GATE CURRENT (mA) GATE TRIGGER VOLTAGE (V) GATE VOLTAGE (V) 7 5 3 2 GATE TRIGGER CURRENT (Tj = t°C) GATE TRIGGER CURRENT (Tj = 25°C) 100 (%) GATE CHARACTERISTICS MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE HALF WAVE) 1.5 θ = 30° 60° 90° 120° 180° 1.0 0.5 θ 360° 0 0 RESISTIVE, INDUCTIVE LOADS 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 AVERAGE ON-STATE CURRENT (A) Jan.2000 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR05AS LOW POWER USE ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 160 25 25 t0.7 140 ALUMINUM BOARD θ WITH SOLDERING 360° 120 RESISTIVE, 100 INDUCTIVE LOADS 80 NATURAL CONVECTION 60 θ = 30° 90° 180° 40 60° 120° 20 0 0 0.2 0.4 MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE FULL WAVE) AVERAGE POWER DISSIPATION (W) AMBIENT TEMPERATURE (°C) NON-INSULATED TYPE, PLANAR PASSIVATION TYPE 0.8 0.6 1.5 180° 1.0 0.5 θ 0 100 80 60 40 60° θ = 30° 20 0 0 0.2 120° 90° 0.4 180° 0.6 DC 1.0 360° 0 θ = 30° 60° 20 0 120° 270° 90° 180° 0 0.2 0.4 0.6 0.8 AVERAGE ON-STATE CURRENT (A) 0 RESISTIVE, INDUCTIVE LOADS 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 AVERAGE ON-STATE CURRENT (A) BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE 100 (%) 40 θ 0.5 160 BREAKOVER VOLTAGE (T j = t°C) BREAKOVER VOLTAGE (T j = 25°C ) AMBIENT TEMPERATURE (°C) DC 90° 180° θ = 30° 60° 120° 270° 1.5 AVERAGE ON-STATE CURRENT (A) 60 RESISTIVE LOADS 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 MAXIMUM AVERAGE POWER DISSIPATION (RECTANGULAR WAVE) 0.8 ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) 160 25 25 ± t0.7 140 ALUMINUM BOARD θ WITH SOLDERING 360° 120 NATURAL CONVECTION RESISTIVE, 100 INDUCTIVE LOADS 80 0 AVERAGE ON-STATE CURRENT (A) AVERAGE POWER DISSIPATION (W) AMBIENT TEMPERATURE (°C) RESISTIVE LOADS NATURAL CONVECTION θ 360° AVERAGE ON-STATE CURRENT (A) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) 160 25 25 t0.7 140 ALUMINUM BOARD θ θ WITH SOLDERING 360° 120 90° θ = 30° 60° 120° 120 TYPICAL EXAMPLE 140 100 RGK = 1kΩ 80 60 40 20 0 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) Jan.2000 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR05AS LOW POWER USE 80 60 40 20 0 10–1 2 3 5 7100 2 3 5 7101 2 3 5 7 102 80 60 #2 40 TYPICAL EXAMPLE # 1 IGT (25°C)= 10µA 20 # 2 IGT (25°C)= 66µA Tj = 125°C, RGK = 1kΩ #1 0 100 2 3 5 7101 2 3 5 7 102 2 3 5 7 103 HOLDING CURRENT VS. JUNCTION TEMPERATURE HOLDING CURRENT VS. GATE TO CATHODE RESISTANCE 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 Tj = 25°C IH (25°C) = 1mA IGT (25°C) = 25µA DISTRIBUTION TYPICAL EXAMPLE ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, 500 TYPICAL EXAMPLE IGT (25°C) IH (1kΩ) # 1 13µA 1.6mA # 2 59µA 1.8mA 400 #1 300 #2 200 100 Tj = 25°C 0 10–1 2 3 5 7 100 2 3 5 7101 2 3 5 7102 GATE TO CATHODE RESISTANCE (kΩ) REPETITIVE PEAK REVERSE VOLTAGE VS. JUNCTION TEMPERATURE 160 TYPICAL EXAMPLE 140 GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 120 100 (%) JUNCTION TEMPERATURE (°C) GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) 100 (%) 100 RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) 10–1 –60 –40 –20 0 20 40 60 80 100 120 140 REPETITIVE PEAK REVERSE VOLTAGE (Tj = t°C) REPETITIVE PEAK REVERSE VOLTAGE (Tj = 25°C) BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 120 GATE TO CATHODE RESISTANCE (kΩ) 100 (%) HOLDING CURRENT (mA) BREAKOVER VOLTAGE (RGK = rk Ω) BREAKOVER VOLTAGE (RGK = 1kΩ) 100 TYPICAL EXAMPLE Tj = 125°C BREAKOVER VOLTAGE (dv/dt = vV/µs ) BREAKOVER VOLTAGE (dv/dt = 1V/µs ) 120 HOLDING CURRENT (RGK = rk Ω) HOLDING CURRENT (RGK = 1kΩ) 100 (%) BREAKOVER VOLTAGE VS. GATE TO CATHODE RESISTANCE 100 (%) NON-INSULATED TYPE, PLANAR PASSIVATION TYPE 100 80 60 40 20 0 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) 103 7 5 4 3 2 TYPICAL EXAMPLE IGT (25°C) # 1 10µA #2 # 2 66µA #1 102 7 5 4 3 2 Tj = 25°C 101 100 2 3 4 5 7 101 2 3 4 5 7 102 GATE CURRENT PULSE WIDTH (µs) Jan.2000