MITSUBISHI M2V64S20DTP

MITSUBISHI LSIs
SDRAM (Rev.3.2)
Feb.'00
M2V64S20DTP-6,-6L,-7,-7L,-8,-8L
M2V64S30DTP-6,-6L,-7,-7L,-8,-8L
M2V64S40DTP-6,-6L,-7,-7L,-8,-8L
(4-BANK x 4,194,304-WORD x
4-BIT)
(4-BANK x 2,097,152-WORD x
8-BIT)
(4-BANK x 1,048,576-WORD x 16-BIT)
64M Synchronous DRAM
PRELIMINARY
Some of contents are described for general products and are
subject to change w ithout notice.
DESCRIPTION
M 2V64S20DTP is a 4-bank x 4,194,304-word x 4-bit,
M 2V64S30DTP is a 4-bank x 2,097,152-word x 8-bit,
M 2V64S40DTP is a 4-bank x 1,048,576-word x 16-bit,
synchronous DRAM , with LVTTL interface. All inputs and outputs are referenced to the rising edge
of CLK. M 2V64S20DTP, M 2V64S30DTP and M 2V64S40DTP achieve very high speed data rate up
to 133MHz for -6, and are suitable for main memory or graphic memory in computer systems.
FEATURES
M2V64S20/30/40DTP
ITEM
-6
-7
-8
tCLK
Clock Cycle T ime
(Min.)
7.5ns
10ns
tRAS
(Min.)
(Min.)
45ns
50ns
10ns
50ns
tRCD
Active to Precharge Command Period
Row to Column Delay
20ns
20ns
20ns
tAC
Access Time from CLK
(Max.) (CL=3)
Ref /Active Command Period
(Min.)
6ns
70ns
6ns
tRC
5.4ns
67.5ns
70ns
Icc1
Icc6
Operation Current
Self Refresh Current
(Max.)
(Single Bank)
V64S20D
75mA
70mA
70mA
V64S30D
75mA
70mA
70mA
V64S40D
85mA
80mA
80mA
1mA
1mA
1mA
(Max.)
- Single 3.3v±0.3V power supply
- Max. Clock frequency -6:133MHz<3-3-3>, -7:100MHz<2-2-2>, -8:100MHz<3-2-2>
- Fully Synchronous operation referenced to clock rising edge
- 4 bank operation controlled by BA0 & BA1 (Bank Address)
- /CAS latency- 2 and 3 (programmable)
- Burst length- 1, 2, 4, 8 and full page (programmable)
- Burst type- sequential and interleave (programmable)
- Byte Control- DQM L and DQMU for M2V64S40DTP
- Random column access
- Auto p recharge and All bank precharge controlled by A10
- Auto refresh and Self refresh
- 4096 refresh cycles every 64ms
- LVTTL Interface
- 400-mil, 54-pin Thin Small Outline Package (TSOP II) with 0.8mm lead pitch
MITSUBISHI ELECTRIC
1
MITSUBISHI LSIs
SDRAM (Rev.3.2)
Feb.'00
M2V64S20DTP-6,-6L,-7,-7L,-8,-8L
M2V64S30DTP-6,-6L,-7,-7L,-8,-8L
M2V64S40DTP-6,-6L,-7,-7L,-8,-8L
(4-BANK x 4,194,304-WORD x
4-BIT)
(4-BANK x 2,097,152-WORD x
8-BIT)
(4-BANK x 1,048,576-WORD x 16-BIT)
64M Synchronous DRAM
PIN CONFIGURATION (TOP VIEW)
M2V64S20DTP
M2V64S30DTP
M2V64S40DTP
PIN CONFIGURATION
(TOP VIEW)
Vdd
NC
VddQ
NC
DQ0
VssQ
NC
NC
VddQ
NC
DQ1
VssQ
NC
Vdd
NC
/WE
/CAS
/RAS
/CS
BA0(A13)
BA1(A12)
A10(AP)
A0
A1
A2
A3
Vdd
Vdd
DQ0
VddQ
NC
DQ1
VssQ
NC
DQ2
VddQ
NC
DQ3
VssQ
NC
Vdd
NC
/WE
/CAS
/RAS
/CS
BA0(A13)
BA1(A12)
A10(AP)
A0
A1
A2
A3
Vdd
Vdd
DQ0
VddQ
DQ1
DQ2
VssQ
DQ3
DQ4
VddQ
DQ5
DQ6
VssQ
DQ7
Vdd
DQML
/WE
/CAS
/RAS
/CS
BA0(A13)
BA1(A12)
A10(AP)
A0
A1
A2
A3
Vdd
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
Vss
DQ15
VssQ
DQ14
DQ13
VddQ
DQ12
DQ11
VssQ
DQ10
DQ9
VddQ
DQ8
Vss
NC
DQMU
CLK
CKE
NC
A11
A9
A8
A7
A6
A5
A4
Vss
Vss
DQ7
VssQ
NC
DQ6
VddQ
NC
DQ5
VssQ
NC
DQ4
VddQ
NC
Vss
NC
DQM
CLK
CKE
NC
A11
A9
A8
A7
A6
A5
A4
Vss
Vss
NC
VssQ
NC
DQ3
VddQ
NC
NC
VssQ
NC
DQ2
VddQ
NC
Vss
NC
DQM
CLK
CKE
NC
A11
A9
A8
A7
A6
A5
A4
Vss
CLK
: Master Clock
DQM
: Output Disable/ Write Mask
CKE
: Clock Enable
A0-11
: Address Input
/CS
: Chip Select
/RAS
: Row Address Strobe
BA0,1
: Bank Address
/CAS
: Column Address Strobe
Vdd
: Power Supply
/WE
: Write Enable
VddQ
: Power Supply for Output
DQ0-15
: Data I/O
Vss
: Ground
VssQ
: Ground for Output
MITSUBISHI ELECTRIC
2
MITSUBISHI LSIs
SDRAM (Rev.3.2)
Feb.'00
M2V64S20DTP-6,-6L,-7,-7L,-8,-8L
M2V64S30DTP-6,-6L,-7,-7L,-8,-8L
M2V64S40DTP-6,-6L,-7,-7L,-8,-8L
(4-BANK x 4,194,304-WORD x
4-BIT)
(4-BANK x 2,097,152-WORD x
8-BIT)
(4-BANK x 1,048,576-WORD x 16-BIT)
64M Synchronous DRAM
BLOCK DIAGRAM
DQ0-7
I/O Buffer
Memory Array
Memory Array
Memory Array
Memory Array
4096 x512 x8
Cell Array
4096 x512 x8
Cell Array
4096 x512 x8
Cell Array
4096 x512 x8
Cell Array
Bank #0
Bank #1
Bank #2
Bank #3
Mode
Register
Control Circuitry
Address Buffer
Control Signal Buffer
Clock Buffer
A0-11
CLK
BA0,1
/CS
CKE
/RAS
/CAS
/WE
DQM
Note : This figure shows the M2V64S30DTP.
The M2V64S20DTP configration is 4096x1024x4 of cell array and DQ 0-3.
The M2V64S40DTP configration is 4096x256x16 of cell array and DQ 0-15.
Type Designation Code
These rules are only applied to the Synchronous DRAM family.
M2 V 64 S 3 0 D TP -8
Access Item
-6 : 7.5ns (PC133 3-3-3),
-7 : 10ns (PC100 2-2-2),
-8 : 10ns (PC100 3-2-2)
P ackage T ype
T P : T S O P (II)
P rocess Generation
D : 5th gen.
Function
R eserved for Future Use
Organization
2 : x4, 3 : x8, 4 : x16
Synchronous DRAM
Density
64 : 64Mbit
Interface
V
: LVT T L
Mitsubishi DRAM
MITSUBISHI ELECTRIC
3
M2V64S20DTP-6,-6L,-7,-7L,-8,-8L
M2V64S30DTP-6,-6L,-7,-7L,-8,-8L
M2V64S40DTP-6,-6L,-7,-7L,-8,-8L
MITSUBISHI LSIs
SDRAM (Rev.3.2)
Feb.'00
(4-BANK x 4,194,304-WORD x
4-BIT)
(4-BANK x 2,097,152-WORD x
8-BIT)
(4-BANK x 1,048,576-WORD x 16-BIT)
64M Synchronous DRAM
PIN FUNCTION
Input
Master Clock:
All other inputs are referenced to the rising edge of CLK.
CKE
Input
Clock Enable:
CKE controls internal clock. When CKE is low, internal clock for the
following cycle is ceased. CKE is also used to select auto /
selfrefresh. After self refresh mode is started, CKE becomes
asynchronous input. Self refresh is maintained as long as CKE is low.
/CS
Input
Chip Select:
When /CS is high, any command means No Operation.
/RAS, /CAS, /WE
Input
Combination of /RAS, /CAS, /WE defines basic commands.
Input
A0-11 specify the Row / Column Address in conjunction with BA0,1.
The Row Address is specified by A0-11. The Column Address is
specified by A0-9 (x4) / A0-8 (x8) / A0-7 (x16).
A10 is also used to indicate precharge option. When A10 is high at a
read / write command, an auto precharge is performed. When A10 is
high at a precharge command, all banks are precharged.
Input
Bank Address:
BA0,1 specifies one of four banks to which a command is applied.
BA0,1 must be set with ACT, PRE, READ, WRITE commands.
CLK
A0-11
BA0,1
DQ0-3(x4),
DQ0-7(x8),
DQ0-15(x16)
Data In and Data out are referenced to the rising edge of CLK.
Input / Output
Din Mask and Output Disable:
When DQM(U, L) is high in burst write, Din for the current cycle is
masked. When DQM(U, L) is high in burst read, Dout is disabled at
the next but one cycle.
DQM(x4,x8),
DQM(U, L)(x16)
Input
Vdd, Vss
Power Supply
Power Supply for the memory array and peripheral circuitry.
VddQ, VssQ
Power Supply
VddQ and VssQ are supplied to the Output Buffers only.
MITSUBISHI ELECTRIC
4
MITSUBISHI LSIs
SDRAM (Rev.3.2)
Feb.'00
M2V64S20DTP-6,-6L,-7,-7L,-8,-8L
M2V64S30DTP-6,-6L,-7,-7L,-8,-8L
M2V64S40DTP-6,-6L,-7,-7L,-8,-8L
(4-BANK x 4,194,304-WORD x
4-BIT)
(4-BANK x 2,097,152-WORD x
8-BIT)
(4-BANK x 1,048,576-WORD x 16-BIT)
64M Synchronous DRAM
BASIC FUNCTIONS
The M 2V64S20, 30 and 40DTP provides basic functions, bank (row) activate, burst read and write, bank
(row) precharge, and auto and self refresh. Each command is defined by control signals of /RAS, /CAS and
/WE at CLK rising edge. In addition to 3 signals, /CS ,CKE and A10 are used as chip select, refresh option,
and precharge option, respectively. To know the detailed definition of commands, please see the command
truth table.
CLK
/CS
Chip Select : L=select, H=deselect
/RAS
Command
/CAS
Command
/WE
Command
CKE
Ref resh Option @ref resh command
A10
Precharge Option @precharge or read/write command
def ine basic commands
Activate (ACT) [/RAS =L, /CAS =/WE =H]
ACT command activates a row in an idle bank indicated by BA.
Read (READ) [/RAS =H, /CAS =L, /WE =H]
READ command starts burst read from the active bank indicated by BA. First output data appears after
/CAS latency. When A10 =H at this command, the bank is deactivated after the burst read (autoprecharge,READA)
Write (WRITE) [/RAS =H, /CAS =/WE =L]
WRITE command starts burst write to the active bank indicated by BA. Total data length to be written
is set by burst length. When A10 =H at this command, the bank is deactivated after the burst write
(auto-p recharge, WRITEA).
Precharge (PRE) [/RAS =L, /CAS =H, /WE =L]
PRE command deactivates the active bank indicated by BA. This command also terminates burst read
/write operation. When A10 =H at this command, all banks are deactivated (precharge all, PREA).
Auto-Refresh (REFA) [/RAS =/CAS =L, /WE =CKE =H]
REFA command starts auto-refresh cycle. Refresh address are generated internally. After this
command, the banks are precharged automatically.
MITSUBISHI ELECTRIC
5
MITSUBISHI LSIs
SDRAM (Rev.3.2)
Feb.'00
M2V64S20DTP-6,-6L,-7,-7L,-8,-8L
M2V64S30DTP-6,-6L,-7,-7L,-8,-8L
M2V64S40DTP-6,-6L,-7,-7L,-8,-8L
(4-BANK x 4,194,304-WORD x
4-BIT)
(4-BANK x 2,097,152-WORD x
8-BIT)
(4-BANK x 1,048,576-WORD x 16-BIT)
64M Synchronous DRAM
COMMAND TRUTH TABLE
CKE CKE
n-1
n
COMMAND
MNEMONIC
Deselect
DESEL
H
X
H
X
X
X
X
X
X
X
No Operation
NOP
H
X
L
H
H
H
X
X
X
X
Row Address Entry &
Bank Activate
ACT
H
X
L
L
H
H
V
V
V
V
Single Bank Precharge
PRE
H
X
L
L
H
L
V
X
L
X
Precharge All Banks
PREA
H
X
L
L
H
L
X
X
H
X
WRITE
H
X
L
H
L
L
V
V
L
V
WRITEA
H
X
L
H
L
L
V
V
H
V
Column Address Entry
& Read
READ
H
X
L
H
L
H
V
V
L
V
Column Address Entry &
Read with Auto-Precharge
READA
H
X
L
H
L
H
V
V
H
V
Auto-Refresh
REFA
H
H
L
L
L
H
X
X
X
X
Self-Refresh Entry
REFS
H
L
L
L
L
H
X
X
X
X
L
H
H
X
X
X
X
X
X
X
L
H
L
H
H
H
X
X
X
X
Column Address Entry
& Write
Column Address Entry &
Write with Auto-Precharge
Self-Refresh Exit
/CS /RAS /CAS /WE BA0,1 A11
A10 A0-9
REFSX
Burst Terminate
TBST
H
X
L
H
H
L
X
X
X
X
Mode Register Set
MRS
H
X
L
L
L
L
L
L
L
V*1
H=High Level, L=Low Level, V=Valid, X=Don't Care, n=CLK cycle number
NOTE:
1. A7-A9 =0, A0-A6 =Mode Address
MITSUBISHI ELECTRIC
6
MITSUBISHI LSIs
SDRAM (Rev.3.2)
Feb.'00
M2V64S20DTP-6,-6L,-7,-7L,-8,-8L
M2V64S30DTP-6,-6L,-7,-7L,-8,-8L
M2V64S40DTP-6,-6L,-7,-7L,-8,-8L
(4-BANK x 4,194,304-WORD x
4-BIT)
(4-BANK x 2,097,152-WORD x
8-BIT)
(4-BANK x 1,048,576-WORD x 16-BIT)
64M Synchronous DRAM
FUNCTION TRUTH TABLE
Current State
/CS
IDLE
H
X
X
X
X
DESEL
NOP
L
H
H
H
X
NOP
NOP
L
H
H
L
X
TBST
ILLEGAL*2
L
H
L
X
BA, CA, A10
READ &
WRITE
ILLEGAL*2
L
L
H
H
BA, RA
ACT
L
L
H
L
BA, A10
PRE &
PREA
L
L
L
H
X
REFA
Auto-Refresh*5
L
L
L
L
Op-Code,
Mode-Add
MRS
Mode Register Set*5
H
X
X
X
X
DESEL
NOP
L
H
H
H
X
NOP
NOP
L
H
H
L
X
TBST
NOP
L
H
L
H
BA, CA, A10
L
H
L
L
L
L
H
L
L
L
L
ROW ACT IVE
/RAS /CAS /WE Address
Command Action
Bank Active, Latch RA
NOP*4
READ &
READA
WRITE &
BA, CA, A10
WRITEA
Begin Read, Latch CA, Determine
Auto-Precharge
H
BA, RA
ACT
Bank Active / ILLEGAL*2
H
L
BA, A10
PRE &
PREA
Precharge / Precharge All
L
L
H
X
REFA
ILLEGAL
L
L
L
Op-Code,
Mode-Add
MRS
ILLEGAL
Begin Write, Latch CA, Determine
Auto-Precharge
MITSUBISHI ELECTRIC
7
MITSUBISHI LSIs
SDRAM (Rev.3.2)
Feb.'00
M2V64S20DTP-6,-6L,-7,-7L,-8,-8L
M2V64S30DTP-6,-6L,-7,-7L,-8,-8L
M2V64S40DTP-6,-6L,-7,-7L,-8,-8L
(4-BANK x 4,194,304-WORD x
4-BIT)
(4-BANK x 2,097,152-WORD x
8-BIT)
(4-BANK x 1,048,576-WORD x 16-BIT)
64M Synchronous DRAM
FUNCTION TRUTH TABLE (continued)
Current State
/CS
READ
H
X
X
X
X
DESEL
NOP (Continue Burst to END)
L
H
H
H
X
NOP
NOP (Continue Burst to END)
L
H
H
L
X
TBST
L
H
L
H
BA, CA, A10
READ
/READA
L
H
L
L
BA, CA, A10
WRITE & Terminate Burst, Latch CA, Begin
WRITEA Write, Determine Auto-Precharge*3
L
L
H
H
BA, RA
ACT
L
L
H
L
BA, A10
PRE &
PREA
Terminate Burst, Precharge
L
L
L
H
X
REFA
ILLEGAL
L
L
L
L
Op-Code,
Mode-Add
MRS
ILLEGAL
H
X
X
X
X
DESEL
NOP (Continue Burst to END)
L
H
H
H
X
NOP
NOP (Continue Burst to END)
L
H
H
L
X
TBST
L
H
L
H
BA, CA, A10
L
H
L
L
BA, CA, A10
L
L
H
H
BA, RA
ACT
L
L
H
L
BA, A10
PRE &
PREA
Terminate Burst, Precharge
L
L
L
H
X
REFA
ILLEGAL
L
L
L
L
Op-Code,
Mode-Add
MRS
ILLEGAL
WRITE
/RAS /CAS /WE Address
Command Action
READ &
READA
WRITE &
WRITEA
Terminate Burst
Terminate Burst, Latch CA, Begin New
Read, Determine Auto-Precharge*3
Bank Active / ILLEGAL*2
Terminate Burst
Terminate Burst, Latch CA, Begin
Read, Determine Auto-Precharge*3
Terminate Burst, Latch CA,Begin
Write, Determine Auto-Precharge*3
Bank Active / ILLEGAL*2
MITSUBISHI ELECTRIC
8
MITSUBISHI LSIs
SDRAM (Rev.3.2)
Feb.'00
M2V64S20DTP-6,-6L,-7,-7L,-8,-8L
M2V64S30DTP-6,-6L,-7,-7L,-8,-8L
M2V64S40DTP-6,-6L,-7,-7L,-8,-8L
(4-BANK x 4,194,304-WORD x
4-BIT)
(4-BANK x 2,097,152-WORD x
8-BIT)
(4-BANK x 1,048,576-WORD x 16-BIT)
64M Synchronous DRAM
FUNCTION TRUTH TABLE (continued)
Current State
/CS
READ with
AUTO
PRECHARGE
H
X
X
X
X
DESEL
NOP (Continue Burst to END)
L
H
H
H
X
NOP
NOP (Continue Burst to END)
L
H
H
L
X
TBST
ILLEGAL
L
H
L
H
BA, CA, A10
READ &
READA
ILLEGAL
L
H
L
L
BA, CA, A10
WRITE &
WRITEA
ILLEGAL
L
L
H
H
BA, RA
ACT
L
L
H
L
BA, A10
PRE &
PREA
ILLEGAL*2
L
L
L
H
X
REFA
ILLEGAL
L
L
L
L
Op-Code,
Mode-Add
MRS
ILLEGAL
H
X
X
X
X
DESEL
NOP (Continue Burst to END)
L
H
H
H
X
NOP
NOP (Continue Burst to END)
L
H
H
L
X
TBST
L
H
L
H
BA, CA, A10
L
H
L
L
BA, CA, A10
L
L
H
H
BA, RA
ACT
L
L
H
L
BA, A10
PRE &
PREA
ILLEGAL*2
L
L
L
H
X
REFA
ILLEGAL
L
L
L
L
Op-Code,
Mode-Add
MRS
ILLEGAL
WRITE with
AUTO
PRECHARGE
/RAS /CAS /WE Address
Command Action
READ &
READA
WRITE &
WRITEA
Bank Active / ILLEGAL*2
ILLEGAL
ILLEGAL
ILLEGAL
Bank Active / ILLEGAL*2
MITSUBISHI ELECTRIC
9
MITSUBISHI LSIs
SDRAM (Rev.3.2)
Feb.'00
M2V64S20DTP-6,-6L,-7,-7L,-8,-8L
M2V64S30DTP-6,-6L,-7,-7L,-8,-8L
M2V64S40DTP-6,-6L,-7,-7L,-8,-8L
(4-BANK x 4,194,304-WORD x
4-BIT)
(4-BANK x 2,097,152-WORD x
8-BIT)
(4-BANK x 1,048,576-WORD x 16-BIT)
64M Synchronous DRAM
FUNCTION TRUTH TABLE (continued)
Current State
/CS
PRE CHARGING
H
X
X
X
X
DESEL
NOP (Idle after tRP)
L
H
H
H
X
NOP
NOP (Idle after tRP)
L
H
H
L
X
TBST
ILLEGAL*2
L
H
L
X
BA, CA, A10
READ &
WRITE
ILLEGAL*2
L
L
H
H
BA, RA
ACT
ILLEGAL*2
L
L
H
L
BA, A10
PRE &
PREA
NOP*4 (Idle after tRP)
L
L
L
H
X
REFA
ILLEGAL
L
L
L
L
Op-Code,
Mode-Add
MRS
ILLEGAL
H
X
X
X
X
DESEL
NOP (Row Active after tRCD)
L
H
H
H
X
NOP
NOP (Row Active after tRCD)
L
H
H
L
X
TBST
L
H
L
X
BA, CA, A10
READ &
ILLEGAL*2
WRITE
L
L
H
H
BA, RA
ACT
ILLEGAL*2
L
L
H
L
BA, A10
PRE &
PREA
ILLEGAL*2
L
L
L
H
X
REFA
ILLEGAL
L
L
L
L
Op-Code,
Mode-Add
MRS
ILLEGAL
ROW
ACTIVATING
/RAS /CAS /WE Address
Command Action
ILLEGAL*2
MITSUBISHI ELECTRIC
10
MITSUBISHI LSIs
SDRAM (Rev.3.2)
Feb.'00
M2V64S20DTP-6,-6L,-7,-7L,-8,-8L
M2V64S30DTP-6,-6L,-7,-7L,-8,-8L
M2V64S40DTP-6,-6L,-7,-7L,-8,-8L
(4-BANK x 4,194,304-WORD x
4-BIT)
(4-BANK x 2,097,152-WORD x
8-BIT)
(4-BANK x 1,048,576-WORD x 16-BIT)
64M Synchronous DRAM
FUNCTION TRUTH TABLE (continued)
Current State
/CS
WRITE
RECOVERING
H
X
X
X
X
DESEL
NOP
L
H
H
H
X
NOP
NOP
L
H
H
L
X
TBST
ILLEGAL*2
L
H
L
X
BA, CA, A10
READ &
WRITE
ILLEGAL*2
L
L
H
H
BA, RA
ACT
ILLEGAL*2
L
L
H
L
BA, A10
PRE &
PREA
ILLEGAL*2
L
L
L
H
X
REFA
ILLEGAL
L
L
L
L
Op-Code,
Mode-Add
MRS
ILLEGAL
H
X
X
X
X
DESEL
NOP (Idle after tRC)
L
H
H
H
X
NOP
NOP (Idle after tRC)
L
H
H
L
X
TBST
ILLEGAL
L
H
L
X
BA, CA, A10
READ &
WRITE
ILLEGAL
L
L
H
H
BA, RA
ACT
ILLEGAL
L
L
H
L
BA, A10
PRE &
PREA
ILLEGAL
L
L
L
H
X
REFA
ILLEGAL
L
L
L
L
Op-Code,
Mode-Add
MRS
ILLEGAL
REFRESHING
/RAS /CAS /WE Address
Command Action
MITSUBISHI ELECTRIC
11
MITSUBISHI LSIs
SDRAM (Rev.3.2)
Feb.'00
M2V64S20DTP-6,-6L,-7,-7L,-8,-8L
M2V64S30DTP-6,-6L,-7,-7L,-8,-8L
M2V64S40DTP-6,-6L,-7,-7L,-8,-8L
(4-BANK x 4,194,304-WORD x
4-BIT)
(4-BANK x 2,097,152-WORD x
8-BIT)
(4-BANK x 1,048,576-WORD x 16-BIT)
64M Synchronous DRAM
FUNCTION TRUTH TABLE (continued)
Current State
/CS
/RAS /CAS /WE Address
Command Action
MODE
REGISTER
SETTING
H
X
X
X
X
DESEL
NOP (Idle after tRSC)
L
H
H
H
X
NOP
NOP (Idle after tRSC)
L
H
H
L
X
TBST
ILLEGAL
L
H
L
X
BA, CA, A10
READ &
WRITE
ILLEGAL
L
L
H
H
BA, RA
ACT
ILLEGAL
L
L
H
L
BA, A10
PRE &
PREA
ILLEGAL
L
L
L
H
X
REFA
ILLEGAL
L
L
L
L
Op-Code,
Mode-Add
MRS
ILLEGAL
ABBREVIATIONS:
H=High Level, L=Low Level, X=Don't Care
BA=Bank Address, RA=Row Address, CA=Column Address, NOP=No OPeration
NOTES:
1. All entries assume that CKE was High during the preceding clock cycle and the current clock cycle.
2. ILLEGAL to bank in specified state; function may be legal in the bank indicated by BA, depending on
the state of that bank.
3. Must satisfy bus contention, bus turn around, write recovery requirements.
4. NOP to bank precharging or in idle state. May precharge bank indicated by BA.
5. ILLEGAL if any bank is not idle.
ILLEGAL = Device operation and/or data-integrity are not guaranteed.
MITSUBISHI ELECTRIC
12
M2V64S20DTP-6,-6L,-7,-7L,-8,-8L
M2V64S30DTP-6,-6L,-7,-7L,-8,-8L
M2V64S40DTP-6,-6L,-7,-7L,-8,-8L
MITSUBISHI LSIs
SDRAM (Rev.3.2)
Feb.'00
(4-BANK x 4,194,304-WORD x
4-BIT)
(4-BANK x 2,097,152-WORD x
8-BIT)
(4-BANK x 1,048,576-WORD x 16-BIT)
64M Synchronous DRAM
FUNCTION TRUTH TABLE for CKE
Current State
SELFREFRESH*1
POWER
DOWN
ALL BANKS
IDLE*2
ANY STATE
other than
listed above
CKE
n-1
CKE
n
/CS
H
X
X
X
X
X
X
INVALID
L
H
H
X
X
X
X
Exit Self-Refresh (Idle after tRC)
L
H
L
H
H
H
X
Exit Self-Refresh (Idle after tRC)
L
H
L
H
H
L
X
ILLEGAL
L
H
L
H
L
X
X
ILLEGAL
L
H
L
L
X
X
X
ILLEGAL
L
L
X
X
X
X
X
NOP (Maintain Self-Refresh)
H
X
X
X
X
X
X
INVALID
L
H
X
X
X
X
X
Exit Power Down to Idle
L
L
X
X
X
X
X
NOP (Maintain Power Down)
H
H
X
X
X
X
X
Refer to Function Truth Table
H
L
L
L
L
H
X
Enter Self-Refresh
H
L
H
X
X
X
X
Enter Power Down
H
L
L
H
H
H
X
Enter Power Down
H
L
L
H
H
L
X
ILLEGAL
H
L
L
H
L
X
X
ILLEGAL
H
L
L
L
X
X
X
ILLEGAL
L
X
X
X
X
X
X
Refer to Current State =Power Down
H
H
X
X
X
X
X
Refer to Function Truth Table
H
L
X
X
X
X
X
Begin CLK Suspend at Next Cycle*3
L
H
X
X
X
X
X
Exit CLK Suspend at Next Cycle*3
L
L
X
X
X
X
X
Maintain CLK Suspend
/RAS /CAS
/WE
Add Action
ABBREVIATIONS:
H=High Level, L=Low Level, X=Don't Care
NOTES:
1. CKE Low to High transition will re-enable CLK and other inputs asynchronously. A minimum
setup time must be satisfied before any command other than EXIT.
2. Power-Down and Self-Refresh can be entered only from the All Banks Idle State.
3. Must be legal command.
MITSUBISHI ELECTRIC
13
MITSUBISHI LSIs
SDRAM (Rev.3.2)
Feb.'00
M2V64S20DTP-6,-6L,-7,-7L,-8,-8L
M2V64S30DTP-6,-6L,-7,-7L,-8,-8L
M2V64S40DTP-6,-6L,-7,-7L,-8,-8L
(4-BANK x 4,194,304-WORD x
4-BIT)
(4-BANK x 2,097,152-WORD x
8-BIT)
(4-BANK x 1,048,576-WORD x 16-BIT)
64M Synchronous DRAM
SIMPLIFIED STATE DIAGRAM
SELF
REFRESH
REFS
REFSX
MODE
REGISTER
SET
MRS
REFA
IDLE
AUTO
REFRESH
CKEL
CLK
SUSPEND
CKEH
ACT
POWER
DOWN
CKEL
CKEH
ROW
ACTIVE
TERM
TERM
WRITE
WRITE
SUSPEND
READ
WRITEA
CKEL
READA
READ
WRITE
WRITE
CKEH
CKEL
READ
CKEH
READA
WRITEA
WRITEA
WRITEA
SUSPEND
POWER
APPLIED
READ
SUSPEND
READA
CKEL
CKEL
WRITEA
PRE
CKEH
CKEH
POWER
ON
READA
PRE
PRE
READA
SUSPEND
PRE
PRE
CHARGE
Automatic Sequence
Command Sequence
MITSUBISHI ELECTRIC
14
M2V64S20DTP-6,-6L,-7,-7L,-8,-8L
M2V64S30DTP-6,-6L,-7,-7L,-8,-8L
M2V64S40DTP-6,-6L,-7,-7L,-8,-8L
MITSUBISHI LSIs
SDRAM (Rev.3.2)
Feb.'00
(4-BANK x 4,194,304-WORD x
4-BIT)
(4-BANK x 2,097,152-WORD x
8-BIT)
(4-BANK x 1,048,576-WORD x 16-BIT)
64M Synchronous DRAM
POWER ON SEQUENCE
Before starting normal operation, the following power on sequence is necessary to prevent a
SDRAM from damaged or malfunctioning.
1. Apply power and start clock. Attempt to maintain CKE high, DQM high and NOP condition at the
inputs.
2. M aintain stable power, stable clock, and NOP input conditions for a minimum of 200µs.
3. Issue precharge commands for all banks. (PRE or PREA)
4. After all banks become idle state (after tRP), issue 8 or more auto-refresh commands.
5. Issue a mode register set command to initialize the mode register.
After these sequence, the SDRAM is idle state and ready for normal operation.
MODE REGISTER
CLK
Burst Length, Burst Type, /CAS Latency and Write M ode can be
programmed by setting the mode register (MRS). The mode register
stores these data until the next MRS command, which may be issued
when both banks are in idle state. After tRSC from a MRS command, the
SDRAM is ready for new command.
/CS
/RAS
/CAS
/WE
BA0,1 A11-A0
BA0 BA1 A11 A10 A9
0
0
0
0
Write
Mode
LATENCY
MODE
CL
000
001
010
011
100
101
110
111
WM
0
1
A8
A7
0
0
A6
A5
A4
LTMODE
A3
A2
BT
A1
A0
BL
Burst Write
Single Write
/CAS LATENCY
R
R
2
3
R
R
R
R
BL
BURST
LENGTH
BURST
TYPE
V
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
0
1
BT=0
1
2
4
8
R
R
R
Full Page
BT=1
1
2
4
8
R
R
R
R
SEQUENTIAL
INTERLEAVED
R: Reserved for Future Use
MITSUBISHI ELECTRIC
15
MITSUBISHI LSIs
SDRAM (Rev.3.2)
Feb.'00
M2V64S20DTP-6,-6L,-7,-7L,-8,-8L
M2V64S30DTP-6,-6L,-7,-7L,-8,-8L
M2V64S40DTP-6,-6L,-7,-7L,-8,-8L
(4-BANK x 4,194,304-WORD x
4-BIT)
(4-BANK x 2,097,152-WORD x
8-BIT)
(4-BANK x 1,048,576-WORD x 16-BIT)
64M Synchronous DRAM
CLK
Command
Read
Write
Y
Y
Address
Q0
DQ
Q1
Q2
Q3
D0
D1
D2
D3
/CAS Latency
CL= 3
BL= 4
Burst Length
Burst Length
Burst Type
Initial Address BL
Column Addressing
A2
A1
A0
Sequential
Interleaved
0
0
0
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
0
0
1
1
2
3
4
5
6
7
0
1
0
3
2
5
4
7
6
0
1
0
2
3
4
5
6
7
0
1
2
3
0
1
6
7
4
5
0
1
1
3
4
5
6
7
0
1
2
3
2
1
0
7
6
5
4
8
1
0
0
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
1
0
1
5
6
7
0
1
2
3
4
5
4
7
6
1
0
3
2
1
1
0
6
7
0
1
2
3
4
5
6
7
4
5
2
3
0
1
1
1
1
7
0
1
2
3
4
5
6
7
6
5
4
3
2
1
0
-
0
0
0
1
2
3
0
1
2
3
-
0
1
1
2
3
0
1
0
3
2
4
-
1
0
2
3
0
1
2
3
0
1
-
1
1
3
0
1
2
3
2
1
0
-
-
0
0
1
0
1
1
0
1
0
-
-
1
2
MITSUBISHI ELECTRIC
16
MITSUBISHI LSIs
SDRAM (Rev.3.2)
Feb.'00
M2V64S20DTP-6,-6L,-7,-7L,-8,-8L
M2V64S30DTP-6,-6L,-7,-7L,-8,-8L
M2V64S40DTP-6,-6L,-7,-7L,-8,-8L
(4-BANK x 4,194,304-WORD x
4-BIT)
(4-BANK x 2,097,152-WORD x
8-BIT)
(4-BANK x 1,048,576-WORD x 16-BIT)
64M Synchronous DRAM
OPERATIONAL DESCRIPTION
BANK ACTIVATE
One of four banks is activated by an ACT command.
An bank is selected by BA0-1. A row is selected by A0-11.
M ultiple banks can be active state concurrently by issuing multiple ACT commands.
M inimum activation interval between one bank and another bank is tRRD.
PRECHARGE
An open bank is deactivated by a PRE command.
A bank to be deactivated is designated by BA0-1.
When multiple banks are active, a precharge all command (PREA, PRE + A10=H) deactivates all of
open banks at the same time. BA0-1 are "Don't Care" in this case.
M inimum delay of an ACT command after a PRE command to the same bank is tRP.
Bank Activation and Precharge All (BL=4, CL=2)
CLK
Command
ACT
ACT
tRRD
READ
tRCD
ACT
tRP
A0-9,11
Xa
Xb
Yb
A10
Xa
Xb
0
BA0-1
00
01
01
DQ
PRE
Xa
Xa
1
00
Qb0
Qb1
Qb2
Qb3
Precharge All
READ
A READ command can be issued to any active bank. The start address is specified by A0-9(x4), A0-8
(x8), A0-7 (x16). 1st output data is available after the /CAS Latency from the READ. The consecutive
data length is defined by the Burst Length. The address sequence of the burst data is defined by the Burst
Type. M inimum delay of a READ command after an ACT command to the same bank is tRCD.
When A10 is high at a READ command, auto-precharge (READA) is performed. Any command (READ,
WRITE, PRE, ACT,TBST) to the same bank is inhibited till the internal precharge is complete. The
internal precharge starts at the BL after READA. The next ACT command can be issued after (BL +
tRP) from the previous READA. In any case, tRCD+BL > tRASmin must be met.
=
MITSUBISHI ELECTRIC
17
MITSUBISHI LSIs
SDRAM (Rev.3.2)
Feb.'00
M2V64S20DTP-6,-6L,-7,-7L,-8,-8L
M2V64S30DTP-6,-6L,-7,-7L,-8,-8L
M2V64S40DTP-6,-6L,-7,-7L,-8,-8L
(4-BANK x 4,194,304-WORD x
4-BIT)
(4-BANK x 2,097,152-WORD x
8-BIT)
(4-BANK x 1,048,576-WORD x 16-BIT)
64M Synchronous DRAM
Multi Bank Interleaving Read (CL=2, BL=4)
CLK
Command
ACT
READ
ACT
tRCD
READ PRE
ACT
tRCD
tRP
A0-9,11
Xa
Ya
Xb
Yb
A10
Xa
0
Xb
0
0
Xa
BA0-1
00
00
01
01
00
00
Qa2
Qa3
DQ
Qa0
Qa1
Xa
Qb0
Qb1
Qb2
Qb3
Read with Auto-Precharge (CL=2, BL=4)
CLK
Command
ACT
READ
tRCD
ACT
BL
tRP
A0-9,11
Xa
Ya
Xa
A10
Xa
1
Xa
BA0-1
00
00
00
DQ
Qa0
Qa1
Qa2
Qa3
internal precharge starts
Auto-Precharge Timing (READ, BL=4)
CLK
Command
ACT
READ
tRCD
DQ
CL=2
DQ
CL=3
ACT
BL
Qa0
Qa1
Qa2
Qa3
Qa0
Qa1
Qa2
Qa3
internal precharge starts
MITSUBISHI ELECTRIC
18
MITSUBISHI LSIs
SDRAM (Rev.3.2)
Feb.'00
M2V64S20DTP-6,-6L,-7,-7L,-8,-8L
M2V64S30DTP-6,-6L,-7,-7L,-8,-8L
M2V64S40DTP-6,-6L,-7,-7L,-8,-8L
(4-BANK x 4,194,304-WORD x
4-BIT)
(4-BANK x 2,097,152-WORD x
8-BIT)
(4-BANK x 1,048,576-WORD x 16-BIT)
64M Synchronous DRAM
WRITE
A WRITE command can be issued to any active bank.The start address is specified by A0-9(x4),
A0-8 (x8), A0-7 (x16). 1st input data is set at the same cycle as the WRITE. The consecutive data length
to be written is defined by the Burst Length. The address sequence of burst data is defined by the Burst
Type. M inimum delay of a WRITE command after an ACT command to the same bank is tRCD. From
the last input data to the PRE command, the write recovery time (tWR) is required. When A10 is high at
a WRITE command, auto-precharge (WRITEA) is performed. Any command (READ, WRITE, PRE,
ACT, TBST) to the same bank is inhibited till the internal precharge is complete. The internal precharge
starts at tWR after the last input data cycle. The next ACT command can be issued after (BL + tWR -1
+tRP) from the p revious WRITEA. In any case, tRCD + BL + tWR -1 > tRASmin must be met.
=
Write (BL=4)
CLK
Command
ACT
Write
PRE
BL
tRCD
ACT
tRP
A0-9,11
Xa
Ya
A10
Xa
0
0
Xa
BA0-1
00
00
00
00
Xa
tWR
DQ
Da0
Da1
Da2
Da3
Write with Auto-Precharge (BL=4)
CLK
Command
ACT
Write
ACT
tRCD
BL
tRP
A0-9,11
Xa
Ya
Xa
A10
Xa
1
Xa
BA0-1
00
00
00
tWR
DQ
Da0
Da1
Da2
Da3
internal precharge starts
MITSUBISHI ELECTRIC
19
MITSUBISHI LSIs
SDRAM (Rev.3.2)
Feb.'00
M2V64S20DTP-6,-6L,-7,-7L,-8,-8L
M2V64S30DTP-6,-6L,-7,-7L,-8,-8L
M2V64S40DTP-6,-6L,-7,-7L,-8,-8L
(4-BANK x 4,194,304-WORD x
4-BIT)
(4-BANK x 2,097,152-WORD x
8-BIT)
(4-BANK x 1,048,576-WORD x 16-BIT)
64M Synchronous DRAM
BURST INTERRUPTION
[ Read Interrupted by Read ]
Burst read op eration can be interrupted by new read of any active bank. Random column access is
allowed. READ to READ interval is minimum 1 CLK.
Read interrupted by Read (CL=2, BL=4)
CLK
READ
Command
A0-9,11
A10
BA0-1
READ READ
Ya
Yb
Yc
0
0
0
00
00
10
Qa1
Qa2
Qa0
DQ
Qb0
Qc0
Qc1
Qc2
Qc3
[ Read Interrupted by Write ]
Burst read op eration can be interrupted by write of any active bank. Random column access is allowed.
In this case, the DQ should be controlled adequately by using the DQM to prevent the bus contention.
The output is disabled automatically 1 cycle after WRITE assertion.
Read interrupted by Write (CL=2, BL=4)
CLK
Command
ACT
READ
Write
A0-9,11
Xa
Ya
Ya
A10
Xa
0
0
BA0-1
00
00
00
DQM
DQ
Qa0
Da0
Da1
Output disable by DQM
Da2
Da3
by WRITE
MITSUBISHI ELECTRIC
20
MITSUBISHI LSIs
SDRAM (Rev.3.2)
Feb.'00
M2V64S20DTP-6,-6L,-7,-7L,-8,-8L
M2V64S30DTP-6,-6L,-7,-7L,-8,-8L
M2V64S40DTP-6,-6L,-7,-7L,-8,-8L
(4-BANK x 4,194,304-WORD x
4-BIT)
(4-BANK x 2,097,152-WORD x
8-BIT)
(4-BANK x 1,048,576-WORD x 16-BIT)
64M Synchronous DRAM
[ Read Interrupted by Precharge ]
A burst read operation can be interrupted by a precharge of the same bank . READ to PRE interval is
minimum 1 CLK.
A PRE command to output disable latency is equivalent to the /CAS Latency.
Read interrupted by Precharge (BL=4)
CLK
Command
READ
Q0
DQ
Command
PRE
READ
Q1
Q2
PRE
CL=2
DQ
Command
Q0
READ PRE
DQ
Command
Q0
READ
PRE
DQ
Command
Q1
READ
Q0
Q1
Q0
Q1
Q2
PRE
CL=3
DQ
Command
DQ
READ PRE
Q0
MITSUBISHI ELECTRIC
21
MITSUBISHI LSIs
SDRAM (Rev.3.2)
Feb.'00
M2V64S20DTP-6,-6L,-7,-7L,-8,-8L
M2V64S30DTP-6,-6L,-7,-7L,-8,-8L
M2V64S40DTP-6,-6L,-7,-7L,-8,-8L
(4-BANK x 4,194,304-WORD x
4-BIT)
(4-BANK x 2,097,152-WORD x
8-BIT)
(4-BANK x 1,048,576-WORD x 16-BIT)
64M Synchronous DRAM
[ Read Interrupted by Burst Terminate ]
Similarly to the precharge, a burst terminate command can interrupt the burst read operation and
disable the data output. The terminated bank remains active. READ to TBST interval is minimum 1
CLK. A TBST command to output disable latency is equivalent to the /CAS Latency.
Read interrupted by Terminate (BL=4)
CLK
Command
READ
Q0
DQ
Command
TBST
READ
Q1
Q2
TBST
CL=2
DQ
Command
Q0
READ TBST
DQ
Command
Q0
READ
TBST
DQ
Command
Q1
READ
Q0
Q1
Q0
Q1
Q2
TBST
CL=3
DQ
Command
DQ
READ TBST
Q0
MITSUBISHI ELECTRIC
22
MITSUBISHI LSIs
SDRAM (Rev.3.2)
Feb.'00
M2V64S20DTP-6,-6L,-7,-7L,-8,-8L
M2V64S30DTP-6,-6L,-7,-7L,-8,-8L
M2V64S40DTP-6,-6L,-7,-7L,-8,-8L
(4-BANK x 4,194,304-WORD x
4-BIT)
(4-BANK x 2,097,152-WORD x
8-BIT)
(4-BANK x 1,048,576-WORD x 16-BIT)
64M Synchronous DRAM
[ Write Interrupted by Write ]
Burst write operation can be interrupted by new write of any active bank. Random column access is
allowed. WRITE to WRITE interval is minimum 1 CLK.
Write interrupted by Write (BL=4)
CLK
Command
Write
Write
Write
A0-9,11
Ya
Yb
Yc
0
0
0
BA0-1
00
00
10
DQ
Da0
Db0
Dc0
A10
Da1
Da2
Dc1
Dc2
Dc3
[ Write Interrupted by Read ]
Burst write operation can be interrupted by read of any active bank. Random column access is allowed.
WRITE to READ interval is minimum 1 CLK. The input data on DQ at the interrupting READ cycle is
"Don't Care".
Write interrupted by Read (CL=2, BL=4)
CLK
Command
ACT
Write
A0-9,11
Xa
Ya
Yb
A10
Xa
0
0
BA0-1
00
00
00
DQ
Da0
READ
Da1
Qb0
Qb1
Qb2
Qb3
don't care
MITSUBISHI ELECTRIC
23
MITSUBISHI LSIs
SDRAM (Rev.3.2)
Feb.'00
M2V64S20DTP-6,-6L,-7,-7L,-8,-8L
M2V64S30DTP-6,-6L,-7,-7L,-8,-8L
M2V64S40DTP-6,-6L,-7,-7L,-8,-8L
(4-BANK x 4,194,304-WORD x
4-BIT)
(4-BANK x 2,097,152-WORD x
8-BIT)
(4-BANK x 1,048,576-WORD x 16-BIT)
64M Synchronous DRAM
[ Write Interrupted by Precharge ]
Burst write operation can be interrupted by precharge of the same bank. Write recovery time (tWR) is
required from the last data to PRE command. During write recovery, data inputs must be masked by
DQM .
Write interrupted by Precharge (BL=4)
CLK
Command
ACT
Write
PRE
ACT
tRP
A0-9,11
A10
BA0-1
Xa
Ya
Xa
0
0
0
0
00
00
00
00
DQM
tWR
Da0
DQ
Da1
[ Write Interrupted by Burst Terminate ]
Burst terminate command can terminate burst write operation. In this case, the write recovery time is
not required and the bank remains active. WRITE to TBST interval is minimum 1 CLK.
Write interrupted by Terminate (BL=4)
CLK
Command
ACT
Write
A0-9,11
Xa
Ya
Yb
0
0
0
00
00
00
A10
BA0-1
DQ
Da0
TBST
Write
Da1
Db0
Db1
Db2
Db3
MITSUBISHI ELECTRIC
24
MITSUBISHI LSIs
SDRAM (Rev.3.2)
Feb.'00
M2V64S20DTP-6,-6L,-7,-7L,-8,-8L
M2V64S30DTP-6,-6L,-7,-7L,-8,-8L
M2V64S40DTP-6,-6L,-7,-7L,-8,-8L
(4-BANK x 4,194,304-WORD x
4-BIT)
(4-BANK x 2,097,152-WORD x
8-BIT)
(4-BANK x 1,048,576-WORD x 16-BIT)
64M Synchronous DRAM
[ Write with Auto-Precharge Interrupted by Write or Read to another Bank ]
Burst write with auto-precharge can be interrupted by write or read to another bank. Next ACT
comand can be issued after (BL+tWR-1+tRP) from the WRITEA. Auto-precharge interruption by a
command to the same bank is inhibited.
WRITEA interrupted by WRITE to another bank (BL=4)
CLK
Command
Write
ACT
Write
BL
A0-9,11
Ya
tRP
Xa
Yb
tWR
1
0
Xa
BA0-1
00
10
00
DQ
Da0
A10
Da1
Db0
Db1
Db2
Db3
auto-precharge interrupted
activate
WRITEA interrupted by READ to another bank (CL=2, BL=4)
CLK
Command
Write
ACT
Read
BL
A0-9,11
Ya
tRP
Xa
Yb
tWR
1
0
Xa
BA0-1
00
10
00
DQ
Da0
A10
Da1
Qb0
Qb1
Qb2
auto-precharge interrupted
Qb3
activate
MITSUBISHI ELECTRIC
25
M2V64S20DTP-6,-6L,-7,-7L,-8,-8L
M2V64S30DTP-6,-6L,-7,-7L,-8,-8L
M2V64S40DTP-6,-6L,-7,-7L,-8,-8L
MITSUBISHI LSIs
SDRAM (Rev.3.2)
Feb.'00
(4-BANK x 4,194,304-WORD x
4-BIT)
(4-BANK x 2,097,152-WORD x
8-BIT)
(4-BANK x 1,048,576-WORD x 16-BIT)
64M Synchronous DRAM
[ Read with Auto-Precharge Interrupted by Read to another Bank ]
Burst read with auto-precharge can be interrupted by read to another bank. Next ACT comand can
be issued after (BL+tRP) from the READA. Auto-precharge interruption by a command to the same
bank is inhibited.
READA interrupted by READ to another bank (CL=2, BL=4)
CLK
Command
Read
Read
ACT
BL
A0-9,11-12
A10
BA0-1
DQ
tRP
Ya
Yb
Xa
1
0
Xa
00
10
00
Qa0
Qa1
auto-precharge interrupted
Qb0
Qb1
Qb2
Qb3
activate
Full Page Burst
Full page burst length is available for only the sequential burst type. Full page burst read or write
is repeated untill a Precharge or a Burst Terminate command is issued. In case of the full page
burst, a read or write with auto-precharge command is illegal.
Single Write
When sigle write mode is set, burst length for write is always one, independently of Burst Length
defined by (A2-0).
MITSUBISHI ELECTRIC
26
MITSUBISHI LSIs
SDRAM (Rev.3.2)
Feb.'00
M2V64S20DTP-6,-6L,-7,-7L,-8,-8L
M2V64S30DTP-6,-6L,-7,-7L,-8,-8L
M2V64S40DTP-6,-6L,-7,-7L,-8,-8L
(4-BANK x 4,194,304-WORD x
4-BIT)
(4-BANK x 2,097,152-WORD x
8-BIT)
(4-BANK x 1,048,576-WORD x 16-BIT)
64M Synchronous DRAM
AUTO REFRESH
Single cycle of auto-refresh is initiated with a REFA (/CS= /RAS= /CAS= L, /WE= /CKE= H)
command. The refresh address is generated internally. 4096 REFA cycles within 64ms refresh 64M bit
memory cells. The auto-refresh is performed on 4 banks concurrently. Before performing an autorefresh, all banks must be in idle state. Auto-refresh to auto-refresh interval is minimum tRFC. Any
command must not be issued before tRFC from the REFA command.
Auto-Refresh
CLK
/CS
NOP or DESELECT
/RAS
/CAS
/WE
CKE
minimum tRFC
A0-11
BA0-1
Auto Refresh on All Banks
Auto Refresh on All Banks
MITSUBISHI ELECTRIC
27
MITSUBISHI LSIs
SDRAM (Rev.3.2)
Feb.'00
M2V64S20DTP-6,-6L,-7,-7L,-8,-8L
M2V64S30DTP-6,-6L,-7,-7L,-8,-8L
M2V64S40DTP-6,-6L,-7,-7L,-8,-8L
(4-BANK x 4,194,304-WORD x
4-BIT)
(4-BANK x 2,097,152-WORD x
8-BIT)
(4-BANK x 1,048,576-WORD x 16-BIT)
64M Synchronous DRAM
SELF REFRESH
Self-refresh mode is entered by issuing a REFS command (/CS= /RAS= /CAS= L, /WE= H, CKE= L).
Once the self-refresh is initiated, it is maintained as long as CKE is kept low. During the self-refresh mode,
CKE is asynchronous and the only enabled input. All other inputs including CLK are disabled and
ignored, so that power consumption due to synchronous inputs is saved. To exit the self-refresh,
supplying stable CLK inputs, asserting DESEL or NOP command and then asserting CKE=H. After
tRFC from the 1st CLK edge following CKE=H, all banks are in idle state and a new command can be
issued, but DESEL or NOP commands must be asserted till then.
Self-Refresh
CLK
Stable CLK
NOP
/CS
/RAS
/CAS
/WE
CKE
new command
A0-11
X
BA0-1
00
Self Refresh Entry
Self Refresh Exit
minimum tRFC
for recovery
MITSUBISHI ELECTRIC
28
MITSUBISHI LSIs
SDRAM (Rev.3.2)
Feb.'00
M2V64S20DTP-6,-6L,-7,-7L,-8,-8L
M2V64S30DTP-6,-6L,-7,-7L,-8,-8L
M2V64S40DTP-6,-6L,-7,-7L,-8,-8L
(4-BANK x 4,194,304-WORD x
4-BIT)
(4-BANK x 2,097,152-WORD x
8-BIT)
(4-BANK x 1,048,576-WORD x 16-BIT)
64M Synchronous DRAM
CLK SUSPEND and POWER DOWN
CKE controls the internal CLK at the following cycle. Figure below shows how CKE works. By
negating CKE, the next internal CLK is suspended. The purpose of CLK suspend is power down, output
suspend or input suspend. CKE is a synchronous input except during the self-refresh mode. CLK
suspend can be performed either when the banks are active or idle. A command at the suspended cycle is
ignored.
ext.CLK
tIH
tIS
tIH
tIS
CKE
int.CLK
Power Down by CKE
CLK
Standby Power Down
CKE
Command
PRE
NOP NOP NOP
Activ e Power Down
CKE
Command
ACT
NOP NOP NOP
DQ Suspend by CKE
CLK
CKE
Command
DQ
Write
D0
Read
D1
D2
D3
Q0
Q1
Q2
Q3
MITSUBISHI ELECTRIC
29
MITSUBISHI LSIs
SDRAM (Rev.3.2)
Feb.'00
M2V64S20DTP-6,-6L,-7,-7L,-8,-8L
M2V64S30DTP-6,-6L,-7,-7L,-8,-8L
M2V64S40DTP-6,-6L,-7,-7L,-8,-8L
(4-BANK x 4,194,304-WORD x
4-BIT)
(4-BANK x 2,097,152-WORD x
8-BIT)
(4-BANK x 1,048,576-WORD x 16-BIT)
64M Synchronous DRAM
DQM CONTROL
DQM (U, L) is a dual functional signal defined as the data mask for writes and the output disable for
reads. During writes, DQM (U, L) masks input data word by word. DQM (U, L) to Data In latency is
0. During reads, DQM (U, L) forces output to Hi-Z word by word. DQM (U, L) to output Hi-Z
latency is 2.
DQM Function
CLK
Command
Write
Read
DQM(U, L)
DQ
D0
D2
D3
masked by DQM(U, L)=H
Q0
Q1
Q3
disabled by DQM(U, L)=H
MITSUBISHI ELECTRIC
30
MITSUBISHI LSIs
SDRAM (Rev.3.2)
Feb.'00
M2V64S20DTP-6,-6L,-7,-7L,-8,-8L
M2V64S30DTP-6,-6L,-7,-7L,-8,-8L
M2V64S40DTP-6,-6L,-7,-7L,-8,-8L
(4-BANK x 4,194,304-WORD x
4-BIT)
(4-BANK x 2,097,152-WORD x
8-BIT)
(4-BANK x 1,048,576-WORD x 16-BIT)
64M Synchronous DRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Conditions
Ratings
Unit
Vdd
Supply Voltage
with respect to Vss
-0.5 ~ 4.6
V
-0.5 ~ 4.6
V
VddQ
Supply Voltage for Output with respect to VssQ
VI
Input Voltage
with respect to Vss
-0.5 ~ Vdd+0.5
V
VO
Output Voltage
with respect to VssQ
-0.5 ~ VddQ+0.5
V
IO
Output Current
50
mA
Pd
Power Dissipation
1000
mW
Ta = 25'C
Topr
Operating Temperature
0 ~ 70
'C
Tstg
Storage Temperature
-65 ~ 150
'C
RECOM M ENDED OPERATING CONDITIONS
(Ta=0 ~ 70'C, unless otherwise noted)
Limits
Symbol
Parameter
Vdd
Unit
Min.
Typ.
Max.
Supply Voltage
3.0
3.3
3.6
V
Vss
Supply Voltage
0
0
0
V
VddQ
Supply Voltage for Output
3.0
3.3
3.6
V
VssQ
Supply Voltage for Output
0
0
0
V
VIH *1
High-Level Input Voltage all inputs
2.0
Vdd+0.3
V
VIL *2
Low-Level Input Voltage all inputs
-0.3
0.8
V
NOTES)
1. VIH(max)=5.5V AC f or pulse width less than 10ns.
2. VIL(min)=-1.0V AC f or pulse width less than 10ns.
CAPACITANCE
(Ta=0 ~ 70'C, Vdd = VddQ = 3.3 ± 0.3V, Vss = VssQ = 0V, unless otherwise noted)
Limits
Symbol
CI(A)
Parameter
Test Condition
Input Capacitance, address pin
CI(C)
Input Capacitance, control pin
CI(K)
Input Capacitance, CLK pin
CI/O
Input Capacitance, I/O pin
VI=1.4v
f=1MHz
VI=200mVrms
Unit
Min.
Max.
2.5
3.8
pF
2.5
3.8
pF
2.5
3.5
pF
4.0
6.5
pF
MITSUBISHI ELECTRIC
31
MITSUBISHI LSIs
SDRAM (Rev.3.2)
Feb.'00
M2V64S20DTP-6,-6L,-7,-7L,-8,-8L
M2V64S30DTP-6,-6L,-7,-7L,-8,-8L
M2V64S40DTP-6,-6L,-7,-7L,-8,-8L
(4-BANK x 4,194,304-WORD x
4-BIT)
(4-BANK x 2,097,152-WORD x
8-BIT)
(4-BANK x 1,048,576-WORD x 16-BIT)
64M Synchronous DRAM
AVERAGE SUPPLY CURRENT from Vdd
(Ta=0 ~ 70'C, Vdd = VddQ = 3.3 ± 0.3V, Vss = VssQ = 0V, Output Open, unless otherwise noted)
ITEM
Symbol
Organization
Icc1
-7
-8
x4
75
70
70
x8
75
70
70
x16
85
80
80
Icc2N
x4/x8/x16
20
20
20
mA
Icc2NS
x4/x8/x16
15
15
15
mA
tCLK = 15ns
CKE = L
Icc2P
x4/x8/x16
2
2
2
mA
CLK = L
CKE = L
Icc2PS
x4/x8/x16
1
1
1
mA
CKE = H, tCLK=15ns
Icc3N
x4/x8/x16
30
30
30
CKE = H, CLK=L
Icc3NS
x4/x8/x16
25
25
25
x4
90
70
70
x8
90
70
70
x16
100
80
80
x4/x8/x16
130
110
110
mA
1
1
1
mA
0.5
0.5
0.5
mA
single bank operation
precharge standby
current in Non Power
down mode
/CS > Vcc -0.2V
tCLK = 15ns
CKE = H
VIH > Vcc - 0.2V
VIL < 0.2V
CLK = L & CKE = H
VIH > Vcc - 0.2V
VIL < 0.2V
all input signals are fixed.
precharge standby
current in Power down
mode
/CS > Vcc -0.2V
active standby current
burst current
Unit
-6
operating current
tRC=min, tCLK =min,
BL=1 , CL=3
Limits (max.)
mA
mA
All Bank Active
tCLK = min
BL=4, CL=3
Icc4
auto-refresh current
tRC=min, tCLK=min
Icc5
self-refresh current
CKE < 0.2V
Icc6
x4 6,7,8
/x8
/x16 6L,7L,8L
mA
NOTE)
1. Icc(max) is specif ied at the output open condition.
2. Input signals are changed one time during 30ns.
AC OPERATING CONDITIONS AND CHARACTERISTICS
(Ta=0 ~ 70'C, Vdd = VddQ = 3.3 ± 0.3V, Vss = VssQ = 0V, unless otherwise noted)
Symbol
Parameter
Limits
Test Conditions
Min.
VOH(DC)
High-Level Output Voltage (DC)
IOH=-2mA
VOL(DC)
Low-Level Output Voltage (DC)
IOL= 2mA
IOZ
Off-state Output Current
Q floating Vo=0 ~ VddQ
II
Input Current
VIH=0 ~ VddQ+0.3V
Unit
Max.
2.4
V
0.4
V
-5
5
µA
-5
5
µA
MITSUBISHI ELECTRIC
32
MITSUBISHI LSIs
SDRAM (Rev.3.2)
Feb.'00
M2V64S20DTP-6,-6L,-7,-7L,-8,-8L
M2V64S30DTP-6,-6L,-7,-7L,-8,-8L
M2V64S40DTP-6,-6L,-7,-7L,-8,-8L
(4-BANK x 4,194,304-WORD x
4-BIT)
(4-BANK x 2,097,152-WORD x
8-BIT)
(4-BANK x 1,048,576-WORD x 16-BIT)
64M Synchronous DRAM
AC TIM ING REQUIREMENTS
(Ta=0 ~ 70'C, Vdd = VddQ = 3.3 ± 0.3V, Vss = VssQ = 0V, unless otherwise noted)
Input Pulse Levels:
0.8V to 2.0V
Input Timing Measurement Level:
1.4V
Limits
-6
Parameter
Symbol
Min.
tCLK
CLK cycle time
-7
Max.
Min.
Unit
-8
Max.
Min.
Max.
CL=2
10
10
13
ns
CL=3
7.5
10
10
ns
tCH
CLK High pulse width
2.5
3
3
ns
tCL
CLK Low pulse width
2.5
3
3
ns
Transition time of CLK
1
tT
10
10
1
1
10
ns
tIS
Input Setup time
(all inputs)
1.5
2
2
ns
tIH
Input Hold time
(all inputs)
0.8
1
1
ns
tRC
Row Cycle time
67.5
70
70
ns
tRFC
Refresh Cycle time
75
80
80
ns
tRCD
Row to Column Delay
20
20
20
ns
tRAS
Row Active time
45
tRP
Row Precharge time
20
20
20
ns
tWR
Write Recovery time
12
12
12
ns
tRRD
Act to Act delay
15
20
20
ns
tRSC
Mode Register Set Cycle time
10
10
10
ns
tREF
Refresh Interval time
CLK
Signal
100K
100K
50
64
64
50
100K
64
ns
ms
1.4V
1.4V
AC timing is referenced to the
input signal crossing through
1.4V.
MITSUBISHI ELECTRIC
33
MITSUBISHI LSIs
SDRAM (Rev.3.2)
Feb.'00
M2V64S20DTP-6,-6L,-7,-7L,-8,-8L
M2V64S30DTP-6,-6L,-7,-7L,-8,-8L
M2V64S40DTP-6,-6L,-7,-7L,-8,-8L
(4-BANK x 4,194,304-WORD x
4-BIT)
(4-BANK x 2,097,152-WORD x
8-BIT)
(4-BANK x 1,048,576-WORD x 16-BIT)
64M Synchronous DRAM
SWITCHING CHARACTERISTICS
(Ta=0 ~ 70'C, Vdd = VddQ = 3.3 ± 0.3V, Vss = VssQ = 0V, unless otherwise noted)
SWITCHING CHARACTERISTICS
(Ta=0 – 70'C, Vdd= VddQ= 3.3 ± 0.3V, Vss= VssQ= 0V, unless otherwise noted )
Limits
Symbol
Parameter
-6
Min.
tAC
tOH
Access time f rom CLK
Output Hold time
f rom CLK
-8
-7
Max.
Max.
Min.
Min.
Unit Note
Max.
CL=2
6
6
7
ns
CL=3
5.4
6
6
ns
CL=2
CL=3
3
3
3
ns
2.7
3
3
ns
0
0
ns
tOLZ
Delay , output lowimpedance f rom CLK
0
tOHZ
Delay , output highimpedance f rom CLK
2.7
5.4
3
6
3
6
*1
ns
NOTE)
1. If clock rising time is longer than 1ns, (tr /2–0.5ns) should be added to the parameter.
Output Load Condition
CLK
VOUT
1.4V
50pF
1.4V
DQ
Output Timing Measurement
Reference Point
CLK
1.4V
tOLZ
DQ
1.4V
tAC
tOH
tOHZ
MITSUBISHI ELECTRIC
34
M2V64S20DTP-6,-6L,-7,-7L,-8,-8L
M2V64S30DTP-6,-6L,-7,-7L,-8,-8L
M2V64S40DTP-6,-6L,-7,-7L,-8,-8L
MITSUBISHI LSIs
SDRAM (Rev.3.2)
Feb.'00
(4-BANK x 4,194,304-WORD x
4-BIT)
(4-BANK x 2,097,152-WORD x
8-BIT)
(4-BANK x 1,048,576-WORD x 16-BIT)
64M Synchronous DRAM
Burst Write (Single Bank) [BL=4]
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
CLK
tRC
/CS
tRAS
tRP
/RAS
tRCD
tRCD
/CAS
tWR
tWR
/WE
CKE
DQM
A0-8
X
A10
X
X
A9,11
X
X
BA0,1
0
DQ
Y
0
D0
ACT#0
X
0
D0
WRITE#0
D0
0
D0
Y
0
D0
PRE#0
ACT #0
0
D0
WRITE#0
D0
D0
PRE#0
Italic paramater shows minimum case
MITSUBISHI ELECTRIC
35
M2V64S20DTP-6,-6L,-7,-7L,-8,-8L
M2V64S30DTP-6,-6L,-7,-7L,-8,-8L
M2V64S40DTP-6,-6L,-7,-7L,-8,-8L
MITSUBISHI LSIs
SDRAM (Rev.3.2)
Feb.'00
(4-BANK x 4,194,304-WORD x
4-BIT)
(4-BANK x 2,097,152-WORD x
8-BIT)
(4-BANK x 1,048,576-WORD x 16-BIT)
64M Synchronous DRAM
Burst Write (Multi Bank) [BL=4]
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
CLK
tRC
tRC
/CS
tRAS
tRP
tRRD
/RAS
tRCD
tRCD
tRCD
/CAS
tWR
tWR
/WE
CKE
DQM
A0-8
X
A10
X
X
X
X
A9,11
X
X
X
X
BA0,1
0
DQ
Y
X
0
1
D0
D0
Y
D0
ACT#0 WRITE#0
ACT#1
D0
X
1
0
D1
D1
PRE#0
D1
Y
0
0
D1
D0
ACT #0
WRITEA#1
(Auto-Precharge)
X
1
D0
D0
0
D0
WRITE#0
PRE#0
ACT#1
Italic paramater shows minimum case
MITSUBISHI ELECTRIC
36
M2V64S20DTP-6,-6L,-7,-7L,-8,-8L
M2V64S30DTP-6,-6L,-7,-7L,-8,-8L
M2V64S40DTP-6,-6L,-7,-7L,-8,-8L
MITSUBISHI LSIs
SDRAM (Rev.3.2)
Feb.'00
(4-BANK x 4,194,304-WORD x
4-BIT)
(4-BANK x 2,097,152-WORD x
8-BIT)
(4-BANK x 1,048,576-WORD x 16-BIT)
64M Synchronous DRAM
Burst Read (Single Bank) [CL=2, BL=4]
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
CLK
tRC
/CS
tRAS
tRP
tRAS
/RAS
tRCD
tRCD
/CAS
/WE
CKE
DQM
A0-8
X
A10
X
X
A9,11
X
X
BA0,1
0
Y
X
0
DQ
0
Q0
ACT#0
READ#0
Q0
Q0
PRE#0
Y
0
0
Q0
0
Q0
ACT #0
READ#0
Q0
Q0
Q0
PRE#0
Italic paramater shows minimum case
MITSUBISHI ELECTRIC
37
M2V64S20DTP-6,-6L,-7,-7L,-8,-8L
M2V64S30DTP-6,-6L,-7,-7L,-8,-8L
M2V64S40DTP-6,-6L,-7,-7L,-8,-8L
MITSUBISHI LSIs
SDRAM (Rev.3.2)
Feb.'00
(4-BANK x 4,194,304-WORD x
4-BIT)
(4-BANK x 2,097,152-WORD x
8-BIT)
(4-BANK x 1,048,576-WORD x 16-BIT)
64M Synchronous DRAM
Burst Read (Multi Bank) [CL=2, BL=4]
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
CLK
tRC
tRC
/CS
tRRD
tRAS
/RAS
tRCD
tRCD
tRCD
/CAS
/WE
CKE
DQM
A0-8
X
A10
X
X
X
X
A9,11
X
X
X
X
BA0,1
0
Y
X
0
Y
1
DQ
X
1
Q0
Q0
Q0
0
Q0
ACT#0 READA#0
ACT#1
Y
X
0
Q1
Q1
ACT #0
Q1
1
Q1
Q0
READ#0
0
Q0
Q0
Q0
PRE#0
ACT #1
READA#1
Italic paramater shows minimum case
MITSUBISHI ELECTRIC
38
M2V64S20DTP-6,-6L,-7,-7L,-8,-8L
M2V64S30DTP-6,-6L,-7,-7L,-8,-8L
M2V64S40DTP-6,-6L,-7,-7L,-8,-8L
MITSUBISHI LSIs
SDRAM (Rev.3.2)
Feb.'00
(4-BANK x 4,194,304-WORD x
4-BIT)
(4-BANK x 2,097,152-WORD x
8-BIT)
(4-BANK x 1,048,576-WORD x 16-BIT)
64M Synchronous DRAM
Write Interrupted by Write [BL=4]
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
CLK
/CS
tRRD
/RAS
tRCD
/CAS
tWR
/WE
CKE
DQM
A0-8
X
A10
X
X
X
A9,11
X
X
X
BA0,1
0
DQ
Y
X
0
1
D0
D0
ACT#0 WRITE#0
ACT#1
Y
Y
0
D0
D0
Y
1
D0
D1
X
0
D1
WRITE#0 WRITEA#1
interrupt
interrupt
same
other
bank
bank
D1
D0
0
D0
WRITE#0
interrupt
other
bank
D0
1
D0
PRE#0
ACT #1
Italic paramater shows minimum case
MITSUBISHI ELECTRIC
39
M2V64S20DTP-6,-6L,-7,-7L,-8,-8L
M2V64S30DTP-6,-6L,-7,-7L,-8,-8L
M2V64S40DTP-6,-6L,-7,-7L,-8,-8L
MITSUBISHI LSIs
SDRAM (Rev.3.2)
Feb.'00
(4-BANK x 4,194,304-WORD x
4-BIT)
(4-BANK x 2,097,152-WORD x
8-BIT)
(4-BANK x 1,048,576-WORD x 16-BIT)
64M Synchronous DRAM
Read Interrupted by Read [CL=2, BL=4]
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
CLK
/CS
tRRD
/RAS
tRCD
tRCD
/CAS
/WE
CKE
DQM
A0-8
X
A10
X
X
X
A9,11
X
X
X
BA0,1
0
Y
0
X
Y
1
DQ
1
Q0
ACT#0 READ#0
ACT#1
Y
Q0
READ#1
interrupt
other
bank
Y
1
Q0
Q1
X
0
Q1
Q1
Q1
READA#1
READ#0
interrupt
interrupt
same bank other
bank
1
Q1
Q0
Q0
Q0
Q0
ACT #1
Italic paramater shows minimum case
MITSUBISHI ELECTRIC
40
M2V64S20DTP-6,-6L,-7,-7L,-8,-8L
M2V64S30DTP-6,-6L,-7,-7L,-8,-8L
M2V64S40DTP-6,-6L,-7,-7L,-8,-8L
MITSUBISHI LSIs
SDRAM (Rev.3.2)
Feb.'00
(4-BANK x 4,194,304-WORD x
4-BIT)
(4-BANK x 2,097,152-WORD x
8-BIT)
(4-BANK x 1,048,576-WORD x 16-BIT)
64M Synchronous DRAM
Write Interrupted by Read, Read Interrupted by Write [CL=2, BL=4]
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
CLK
/CS
tRRD
/RAS
tRCD
tRCD
/CAS
tWR
/WE
CKE
DQM
A0-8
X
X
A10
X
X
A9,11
X
X
BA0,1
0
1
DQ
Y
Y
Y
0
1
1
D0
ACT#0
D0
WRITE#0 READ#1
Q1
Q1
D1
1
D1
WRITE#1
D1
D1
PRE#1
ACT#1
Italic paramater shows minimum case
MITSUBISHI ELECTRIC
41
M2V64S20DTP-6,-6L,-7,-7L,-8,-8L
M2V64S30DTP-6,-6L,-7,-7L,-8,-8L
M2V64S40DTP-6,-6L,-7,-7L,-8,-8L
MITSUBISHI LSIs
SDRAM (Rev.3.2)
Feb.'00
(4-BANK x 4,194,304-WORD x
4-BIT)
(4-BANK x 2,097,152-WORD x
8-BIT)
(4-BANK x 1,048,576-WORD x 16-BIT)
64M Synchronous DRAM
Write / Read Terminated by Precharge [CL=2, BL=4]
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
CLK
tRC
/CS
tRP
tRAS
tRP
/RAS
tRCD
tRCD
/CAS
tWR
/WE
CKE
DQM
A0-8
X
A10
X
X
X
A9,11
X
X
X
BA0,1
0
DQ
Y
0
D0
ACT#0
X
0
Y
0
0
D0
WRITE#0
X
0
Q0
PRE#0 ACT#0
Terminate
READ#0
0
Q0
PRE#0
ACT#0
Terminate
Italic paramater shows minimum case
MITSUBISHI ELECTRIC
42
M2V64S20DTP-6,-6L,-7,-7L,-8,-8L
M2V64S30DTP-6,-6L,-7,-7L,-8,-8L
M2V64S40DTP-6,-6L,-7,-7L,-8,-8L
MITSUBISHI LSIs
SDRAM (Rev.3.2)
Feb.'00
(4-BANK x 4,194,304-WORD x
4-BIT)
(4-BANK x 2,097,152-WORD x
8-BIT)
(4-BANK x 1,048,576-WORD x 16-BIT)
64M Synchronous DRAM
Write / Read Terminated by Burst Terminate [CL=2, BL=4]
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
CLK
/CS
/RAS
tRCD
/CAS
tWR
/WE
CKE
DQM
A0-8
X
A10
X
A9,11
X
BA0,1
0
DQ
Y
Y
Y
0
0
0
D0
ACT#0
D0
Q0
Q0
WRITE#0 TERM READ#0 TERM
D0
0
D0
WRITE#0
D0
D0
PRE#0
Italic paramater shows minimum case
MITSUBISHI ELECTRIC
43
M2V64S20DTP-6,-6L,-7,-7L,-8,-8L
M2V64S30DTP-6,-6L,-7,-7L,-8,-8L
M2V64S40DTP-6,-6L,-7,-7L,-8,-8L
MITSUBISHI LSIs
SDRAM (Rev.3.2)
Feb.'00
(4-BANK x 4,194,304-WORD x
4-BIT)
(4-BANK x 2,097,152-WORD x
8-BIT)
(4-BANK x 1,048,576-WORD x 16-BIT)
64M Synchronous DRAM
Single Write Burst Read [CL=2, BL=4]
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
CLK
/CS
/RAS
tRCD
/CAS
/WE
CKE
DQM
A0-8
X
A10
X
A9,11
X
BA0,1
0
DQ
Y
Y
0
0
D0
Q0
Q0
Q0
Q0
ACT#0 WRITE#0 READ#0
Italic paramater shows minimum case
MITSUBISHI ELECTRIC
44
M2V64S20DTP-6,-6L,-7,-7L,-8,-8L
M2V64S30DTP-6,-6L,-7,-7L,-8,-8L
M2V64S40DTP-6,-6L,-7,-7L,-8,-8L
MITSUBISHI LSIs
SDRAM (Rev.3.2)
Feb.'00
(4-BANK x 4,194,304-WORD x
4-BIT)
(4-BANK x 2,097,152-WORD x
8-BIT)
(4-BANK x 1,048,576-WORD x 16-BIT)
64M Synchronous DRAM
Power-Up Sequence and Intialize
CLK
200µs
/CS
tRP
tRFC
tRFC
tRSC
/RAS
/CAS
/WE
CKE
DQM
A0-8
MA
X
A10
0
X
A9,11
0
X
BA0,1
0
0
DQ
NOP
Power On
PRE ALL
REFA
REFA
REFA
MRS
ACT #0
Minimum 8 REFA cycles
Italic paramater shows minimum case
MITSUBISHI ELECTRIC
45
MITSUBISHI LSIs
SDRAM (Rev.3.2)
Feb.'00
M2V64S20DTP-6,-6L,-7,-7L,-8,-8L
M2V64S30DTP-6,-6L,-7,-7L,-8,-8L
M2V64S40DTP-6,-6L,-7,-7L,-8,-8L
(4-BANK x 4,194,304-WORD x
4-BIT)
(4-BANK x 2,097,152-WORD x
8-BIT)
(4-BANK x 1,048,576-WORD x 16-BIT)
64M Synchronous DRAM
Auto Refresh
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
CLK
tRFC
/CS
tRP
/RAS
tRCD
/CAS
/WE
CKE
DQM
A0-8
X
A10
X
A9,11
X
BA0,1
0
DQ
Y
0
D0
PRE ALL
REFA
ACT#0
D0
D0
D0
WRITE#0
All banks must be idle before REFA is issued.
Italic paramater shows minimum case
MITSUBISHI ELECTRIC
46
MITSUBISHI LSIs
SDRAM (Rev.3.2)
Feb.'00
M2V64S20DTP-6,-6L,-7,-7L,-8,-8L
M2V64S30DTP-6,-6L,-7,-7L,-8,-8L
M2V64S40DTP-6,-6L,-7,-7L,-8,-8L
(4-BANK x 4,194,304-WORD x
4-BIT)
(4-BANK x 2,097,152-WORD x
8-BIT)
(4-BANK x 1,048,576-WORD x 16-BIT)
64M Synchronous DRAM
Self Refresh
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
CLK
tRFC
/CS
tRP
/RAS
/CAS
/WE
CKE
DQM
A0-8,
X
A10
X
A9,11
X
BA0,1
0
DQ
PRE ALL Self Refresh Entry
Self Refresh Exit
ACT#0
All banks must be idle before REFS is issued.
Italic paramater shows minimum case
MITSUBISHI ELECTRIC
47
M2V64S20DTP-6,-6L,-7,-7L,-8,-8L
M2V64S30DTP-6,-6L,-7,-7L,-8,-8L
M2V64S40DTP-6,-6L,-7,-7L,-8,-8L
MITSUBISHI LSIs
SDRAM (Rev.3.2)
Feb.'00
(4-BANK x 4,194,304-WORD x
4-BIT)
(4-BANK x 2,097,152-WORD x
8-BIT)
(4-BANK x 1,048,576-WORD x 16-BIT)
64M Synchronous DRAM
CLK Suspension [CL=2, BL=4]
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
CLK
/CS
/RAS
tRCD
/CAS
/WE
CKE
DQM
A0-8
X
A10
X
A9,11
X
BA0,1
0
DQ
Y
Y
0
0
D0
D0
D0
ACT#0 WRITE#0 internal
CLK
suspended
D0
Q0
READ#0
Q0
Q0
Q0
internal
CLK
suspended
Italic paramater shows minimum case
MITSUBISHI ELECTRIC
48
MITSUBISHI LSIs
SDRAM (Rev.3.2)
Feb.'00
M2V64S20DTP-6,-6L,-7,-7L,-8,-8L
M2V64S30DTP-6,-6L,-7,-7L,-8,-8L
M2V64S40DTP-6,-6L,-7,-7L,-8,-8L
(4-BANK x 4,194,304-WORD x
4-BIT)
(4-BANK x 2,097,152-WORD x
8-BIT)
(4-BANK x 1,048,576-WORD x 16-BIT)
64M Synchronous DRAM
Power Down
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
CLK
/CS
/RAS
/CAS
/WE
Standby Power Down
Active Power Down
CKE
DQM
A0-8
X
A10
X
A9,11
X
BA0,1
0
DQ
PRE ALL
ACT #0
Italic paramater shows minimum case
MITSUBISHI ELECTRIC
49
MITSUBISHI LSIs
SDRAM (Rev.3.2)
Feb.'00
M2V64S20DTP-6,-6L,-7,-7L,-8,-8L
M2V64S30DTP-6,-6L,-7,-7L,-8,-8L
M2V64S40DTP-6,-6L,-7,-7L,-8,-8L
(4-BANK x 4,194,304-WORD x
4-BIT)
(4-BANK x 2,097,152-WORD x
8-BIT)
(4-BANK x 1,048,576-WORD x 16-BIT)
64M Synchronous DRAM
Revison History
Description
Rev.
Date
1.0
Jun '99
-1st edition
2.0
July '99
-single write mode is added
-Icc5 for -6 is changed form 110mA to 130mA
-tRFC is added
-tRSC is changed
3.0
Oct. '99
-tSRX and tPDE are removed
3.1
Oct. '99
-tWR is changed to 12ns
MITSUBISHI ELECTRIC
50
MITSUBISHI LSIs
SDRAM (Rev.3.2)
Feb.'00
M2V64S20DTP-6,-6L,-7,-7L,-8,-8L
M2V64S30DTP-6,-6L,-7,-7L,-8,-8L
M2V64S40DTP-6,-6L,-7,-7L,-8,-8L
(4-BANK x 4,194,304-WORD x
4-BIT)
(4-BANK x 2,097,152-WORD x
8-BIT)
(4-BANK x 1,048,576-WORD x 16-BIT)
64M Synchronous DRAM
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum ef f ort into making semiconductor products better
and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
semiconductors may lead to personal injury , f ire or property damage. Remember to giv e due
consideration to saf ety when making y our circuit designs, with appropriate measures such as (i)
placement of substitutiv e, auxiliary circuits, (ii) use of non-f lammable material or (iii) prev ention
against any m alf unction or mishap.
Notes regarding these materials
1.These materials are intended as a ref erence to assist our customers in the selection of the Mitsubishi
semiconductor product best suited to the customer's application; they do not conv ey any license under
any intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third
party .
2.Mitsubishi Electric Corporation assumes no responsibility f or any damage, or inf ringement of any thirdparty 's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit
application examples contained in these materials.
3.All inf ormation contained in these materials, including product data, diagrams, charts, programs and
algorithms represents inf ormation on products at the time of publication of t hese materials, and are
subject to change by Mitsubishi Electric Corporation without notice due to product improv ements or other
reasons. It is theref ore recommended that customers contact Mitsubishi Electric Corporation or an
authorized Mitsubishi Semiconductor product distributor f or the latest product inf ormation bef ore
purchasing a product listed herein.
The inf ormation described here may c ontain technical inaccuracies or ty pographical errors. Mitsubishi
Electric Corporation assumes no responsibility f or any damage, liability , or other loss rising f rom these
inaccuracies or errors.
Please also pay attention to inf ormation published by Mitsubishi Electric Corporation by v arious means,
including the Mitsubishi Semiconductor home page (http://www.mitsubishichips.com).
4.When using any or all of the inf ormation contained in these materials, including product data, diagrams,
charts, programs, and algorithms, please be sure to ev aluate all inf ormation as a total sy s t em bef ore
making a f inal decision on the applicability of the inf ormation and products. Mitsubishi Electric Corporation
assumes no responsibility f or any damage, liability or other loss resulting f rom the inf ormation contained
herein.
5.Mitsubishi Electric Corporation semiconductors are not designed or manuf actured f or use in a dev ice or
system that is used under circumstances in which human lif e is potentially at stake. Please contact
Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when
considering the use of a product contained herein f or any specif ic purposes, such as apparatus or
systems for transportation, v ehicular, medical, aerospace, nuclear, or undersea repeater use.
6.The prior written approv al of Mitsubishi Electric Corporation is necessary t o reprint or reproduce in whole
or in part these materials.
7.If these products or technologies are subject to the Japanese export control restrictions, they must be
exported under a license f rom the Japanese gov ernment and cannot be imported into a country other than
the approv ed destination.
Any div ersion or reexport contrary t o the export control laws and regulations of Japan and/or the country
of destination is prohibited.
8.Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product
distributor f or f urther details on these materials or the products contained therein.
MITSUBISHI ELECTRIC
51