FAIRCHILD FGA25N120ANTDTU

FGA25N120ANTD/FGA25N120ANTD_F109
1200 V, 25 A NPT Trench IGBT
Features
• NPT Trench Technology, Positive Temperature Coefficient
Description
• Low Saturation Voltage: VCE(sat), typ = 2.0 V 
@ IC = 25 A and TC = 25C
Using Fairchild®'s proprietary trench design and advanced NPT
technology, the 1200V NPT IGBT offers superior conduction
and switching performances, high avalanche ruggedness and
easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating,
microwave oven.
• Low Switching Loss: Eoff, typ = 0.96 mJ 
@ IC = 25 A and TC = 25C
• Extremely Enhanced Avalanche Capability
Applications
• Induction Heating, Microwave Oven
C
G
TO-3P
G C E
E
Absolute Maximum Ratings
Symbol
Description
VCES
Collector-Emitter Voltage
VGES
Gate-Emitter Voltage
IC
Collector Current
@ TC = 25C
Collector Current
@ TC = 100C
ICM (1)
Pulsed Collector Current
IF
Diode Continuous Forward Current
IFM
Diode Maximum Forward Current
PD
Maximum Power Dissipation
Maximum Power Dissipation
FGA25N120ANTD
Unit
1200
V
 20
V
50
A
@ TC = 100C
25
A
90
A
25
A
150
A
@ TC = 25C
312
W
@ TC = 100C
125
W
TJ
Operating Junction Temperature
-55 to +150
C
Tstg
Storage Temperature Range
-55 to +150
C
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
300
C
Notes:
(1) Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
Unit
RJC(IGBT)
Thermal Resistance, Junction-to-Case
--
0.4
C/W
RJC(DIODE)
Thermal Resistance, Junction-to-Case
--
2.0
C/W
RJA
Thermal Resistance, Junction-to-Ambient
--
40
C/W
©2006 Fairchild Semiconductor Corporation
FGA25N120ANTD/FGA25N120ANTD_F109 Rev. C0
1
www.fairchildsemi.com
FGA25N120ANTD/FGA25N120ANTD_F109 1200 V, 25 A NPT Trench IGBT
April 2013
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FGA25N120ANTD
FGA25N120ANTD
TO-3P
-
-
30
Electrical Characteristics of the IGBT
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Unit

Off Characteristics
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0V
--
--
3
mA
IGES
G-E Leakage Current
VGE = VGES, VCE = 0V
--
--
± 250
nA

On Characteristics
VGE(th)
G-E Threshold Voltage
IC = 25mA, VCE = VGE
VCE(sat)
Collector to Emitter
Saturation Voltage
IC = 25A,
3.5
5.5
7.5
V
VGE = 15V
--
2.0
--
V
IC = 25A, VGE = 15V,
TC = 125C
--
2.15
--
V
IC = 50A,
--
2.65
--
V
--
3700
--
pF
--
130
--
pF
--
80
--
pF
VGE = 15V

Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz

Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Eon
Turn-On Switching Loss
Eoff
Turn-Off Switching Loss
Ets
Total Switching Loss
td(on)
Turn-On Delay Time
VCC = 600 V, IC = 25A,
RG = 10, VGE = 15V,
Inductive Load, TC = 25C
VCC = 600 V, IC = 25A,
RG = 10, VGE = 15V,
Inductive Load, TC = 125C
--
50
--
ns
--
60
--
ns
--
190
--
ns
--
100
--
ns
--
4.1
--
mJ
--
0.96
--
mJ
--
5.06
--
mJ
--
50
--
ns
--
60
--
ns
--
200
--
ns
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
--
154
--
ns
Eon
Turn-On Switching Loss
--
4.3
--
mJ
Eoff
Turn-Off Switching Loss
--
1.5
--
mJ
Ets
Total Switching Loss
--
5.8
--
mJ
Qg
Total Gate Charge
Qge
Gate-Emitter Charge
Qgc
Gate-Collector Charge
©2006 Fairchild Semiconductor Corporation
FGA25N120ANTD/FGA25N120ANTD_F109 Rev. C0
VCE = 600 V, IC = 25A,
VGE = 15V
2
--
200
--
nC
--
15
--
nC
--
100
--
nC
www.fairchildsemi.com
FGA25N120ANTD/FGA25N120ANTD_F109 1200 V, 25 A NPT Trench IGBT
Package Marking and Ordering Information
C
Symbol
VFM
trr
Irr
Qrr
= 25°C unless otherwise noted
Parameter
Diode Forward Voltage
Diode Reverse Recovery Time
Test Conditions
IF = 25A
IF = 25A
dI/dt = 200 A/s
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
©2006 Fairchild Semiconductor Corporation
FGA25N120ANTD/FGA25N120ANTD_F109 Rev. C0
3
Min.
Typ.
Max.
Unit
TC = 25C
--
2.0
3.0
V
TC = 125C
--
2.1
--
TC = 25C
--
235
350
TC = 125C
--
300
--
TC = 25C
--
27
40
TC = 125C
--
31
--
TC = 25C
--
3130
4700
TC = 125C
--
4650
--
ns
A
nC
www.fairchildsemi.com
FGA25N120ANTD/FGA25N120ANTD_F109 1200 V, 25 A NPT Trench IGBT
Electrical Characteristics of DIODE T
Figure 1. Typical Output Characteristics
180
20V
TC = 25C
120
15V 12V
17V
160
Figure 2. Typical Saturation Voltage
Characteristics
10V
Common Emitter
VGE = 15V
100
TC = 25C
Collector Current, IC [A]
Collector Current, IC [A]
140
120
9V
100
80
8V
60
40
60
40
20
7V
20
TC = 125C
80
VGE = 6V
0
0
0
2
4
6
8
10
0
Collector-Emitter Voltage, VCE [V]
20
Common Emitter
VGE = 15V
2.5
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
3
40A
IC = 25A
2.0
4
5
Figure 4. Saturation Voltage vs. VGE
1.5
Common Emitter
TC = -40C
16
12
8
4
40A
25A
IC = 12.5A
0
25
50
75
100
125
0
4
Case Temperature, TC [C]
20
12
16
20
Figure 6. Saturation Voltage vs. VGE
20
Common Emitter
TC = 25C
Collector-Emitter Voltage, VCE [V]
16
12
8
40A
25A
4
8
Gate-Emitter Voltage, VGE [V]
Figure 5. Saturation Voltage vs. VGE
Collector-Emitter Voltage, VCE [V]
2
Collector-Emitter Voltage, VCE [V]
Figure 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
3.0
1
IC = 12.5A
0
Common Emitter
TC = 125C
16
12
8
40A
25A
4
IC = 12.5A
0
0
4
8
12
16
20
0
Gate-Emitter Voltage, VGE [V]
©2006 Fairchild Semiconductor Corporation
FGA25N120ANTD/FGA25N120ANTD_F109 Rev. C0
4
8
12
16
20
Gate-Emitter Voltage, VGE [V]
4
www.fairchildsemi.com
FGA25N120ANTD/FGA25N120ANTD_F109 1200 V, 25 A NPT Trench IGBT
Typical Performance Characteristics
(Continued)
Figure 7. Capacitance Characteristics
5000
4500
Figure 8. Turn-On Characteristics vs. Gate
Resistance
Common Emitter
VGE = 0V, f = 1MHz
Ciss
TC = 25C
4000
100
Switching Time [ns]
Capacitance [pF]
3500
3000
2500
2000
1500
tr
td(on)
Common Emitter
VCC = 600V, VGE = 15V
1000
IC = 25A
Coss
TC = 25C
500
TC = 125C
Crss
0
10
1
10
0
10
20
Collector-Emitter Voltage, VCE [V]
30
40
50
60
70
Gate Resistance, RG [ ]
Figure 9. Turn-Off Characteristics vs.
Gate Resistance
Figure 10. Switching Loss vs. Gate Resistance
1000
Common Emitter
VCC = 600V, VGE = 15V
IC = 25A
TC = 25C
10
TC = 125C
Switching Loss [mJ]
Switching Time [ns]
td(off)
100
tf
Common Emitter
VCC = 600V, VGE = 15V
IC = 25A
Eon
Eoff
1
TC = 25C
TC = 125C
10
0
10
20
30
40
50
60
70
0
10
Gate Resistance, RG [ ]
20
30
40
50
60
70
Gate Resistance, RG [ ]
Figure 11. Turn-On Characteristics vs.
Collector Current
Figure 12. Turn-Off Characteristics vs.
Collector Current
Common Emitter
VGE = 15V, RG = 10
TC = 25C
td(off)
tr
Switching Time [ns]
Switching Time [ns]
TC = 125C
100
td(on)
100
tf
Common Emitter
VGE = 15V, RG = 10
TC = 25C
TC = 125C
10
20
30
40
50
10
Collector Current, IC [A]
©2006 Fairchild Semiconductor Corporation
FGA25N120ANTD/FGA25N120ANTD_F109 Rev. C0
20
30
40
50
Collector Current, IC [A]
5
www.fairchildsemi.com
FGA25N120ANTD/FGA25N120ANTD_F109 1200 V, 25 A NPT Trench IGBT
Typical Performance Characteristics
(Continued)
Figure 13. Switching Loss vs. Collector Current
Figure 14. Gate Charge Characteristics
16
Common Emitter
VGE = 15V, RG = 10
Gate-Emitter Voltage, VGE [V]
10
TC = 125C
Switching Loss [mJ]
Common Emitter
RL = 24
14
Eon
TC = 25C
Eoff
1
0.1
TC = 25C
12
600V
Vcc = 200V
400V
10
8
6
4
2
0
10
20
30
40
50
0
20
40
Collector Current, IC [A]
60
80
100
120
140
160
180
200
Gate Charge, Qg [nC]
Figure 15. SOA Characteristics
Figure 16. Turn-Off SOA
100
Ic MAX (Pulsed)
100
50s
Ic MAX (Continuous)
Collector Current, IC [A]
Collector Current, Ic [A]
100s
10
1ms
DC Operation
1
Single Nonrepetitive
Pulse TC = 25C
0.1
10
Curves must be derated
linearly with increase
in temperature
0.01
Safe Operating Area
VGE = 15V, TC = 125C
1
0.1
1
10
100
1000
1
Collector - Emitter Voltage, VCE [V]
10
100
1000
Collector-Emitter Voltage, VCE [V]
Figure 17. Transient Thermal Impedance of IGBT
0
1
1
1
]
c
j
h
t
Z
[
e
s
n
o
p
s
e
R
l
a
m
r
e
h
T
0.5
.
0
0.2
0.1
Pdm
0.05
1
0
.
0
t1
0.02
t2
0.01
single pulse
0
1
1
1
.
0
1
0
.
0
3
E
1
4
E
1
5
E
31
E
1
Duty factor D = t1 / t2
Peak Tj = Pdm  Zthjc + TC
]
c
e
s
[
n
o
i
t
a
r
u
D
e
s
l
u
P
r
a
l
u
g
n
a
t
c
e
R
©2006 Fairchild Semiconductor Corporation
FGA25N120ANTD/FGA25N120ANTD_F109 Rev. C0
6
www.fairchildsemi.com
FGA25N120ANTD/FGA25N120ANTD_F109 1200 V, 25 A NPT Trench IGBT
Typical Performance Characteristics
(Continued)
Figure 18. Forward Characteristics
Figure 19. Reverse Recovery Current
30
Reverse Recovery Currnet , Irr [A]
Forward Current , IF [A]
50
10
TJ = 125C
1
TJ = 25C
TC = 125C
TC = 25C
0.1
0.0
0.4
0.8
1.2
1.6
25
di/dt = 200A/s
20
15
di/dt = 100A/s
10
5
0
5
2.0
Figure 20. Stored Charge
15
20
25
Figure 21. Reverse Recovery Time
4000
300
Reverse Recovery Time , trr [ns]
Stored Recovery Charge , Qrr [nC]
10
Forward Current , IF [A]
Forward Voltage , VF [V]
3000
di/dt = 200A/s
2000
di/dt = 100A/s
1000
di/dt = 100A/s
200
di/dt = 200A/s
100
0
0
5
10
15
20
5
25
Forward Current , IF [A]
©2006 Fairchild Semiconductor Corporation
FGA25N120ANTD/FGA25N120ANTD_F109 Rev. C0
10
15
20
25
Forward Current , IF [A]
7
www.fairchildsemi.com
FGA25N120ANTD/FGA25N120ANTD_F109 1200 V, 25 A NPT Trench IGBT
Typical Performance Characteristics
FGA25N120ANTD/FGA25N120ANTD_F109 1200 V, 25 A NPT Trench IGBT
Mechanical Dimensions
TO-3PN
Dimensions in Millimeters
©2006 Fairchild Semiconductor Corporation
FGA25N120ANTD/FGA25N120ANTD_F109 Rev. C0
8
www.fairchildsemi.com
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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As used here in:
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2.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I64
©2006 Fairchild Semiconductor Corporation
FGA25N120ANTD/FGA25N120ANTD_F109 Rev. C0
9
www.fairchildsemi.com
FGA25N120ANTD/FGA25N120ANTD_F109 1200 V, 25 A NPT Trench IGBT
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