TRANSISTOR MODULE SQD400AA100 UL;E76102 （M） SQD400AA100 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from Semiconductor elements for simple heatsink construction. 113max. 3-M4 4-φ6.5 C BX B ● Low EX ● IC=400A, 90.0max. 70±0.2 10 10 12 VCEX=1000V saturation voltage High DC current gain ● Isolated monuting base 93±0.2 E （Applications） Motor Control（VVVF） , AC/DC Servo, UPS, Switching Power Supply, Ultrasonic Application BX E 21.5 C 23.0 29.0 29.5 37.0max. 30.0max. EX 2-M8 B Unit：A ■Maximum Ratings Symbol （Tj＝25℃ unless otherwise specified） Item Conditions VCBO Collector-Base Voltage VCEX Collector-Emitter Voltage IC −IC Unit 1000 V VBE＝−2V 1200 V IC＝−80A，IB＝−18A 1000 V 10 V Collector Current 400 A Reverse Collector Current 400 A 20 A VCEX（SUS） Collector-Emitter Sustaning Voltage VEBO Ratings SQD400AA100 Emitterr-Base Voltage IB Base Current PT Total power dissipation Tj Junction Temperature Tstg Storage Temperature VISO Isolation Voltage Mounting Torque TC＝25℃ 3120 W −40 to ＋150 ℃ −40 to ＋125 ℃ 2500 V A.C. 1minute Mouting（M6） Recommended Value 2.5-3.9（25-40） 4.7（48） Terminal（M8） Recommended Value 8.8-10 （90-105） 11（115） Terminal（M4） Recommended Value 1.0-1.4（10-14） 1.5（15） Mass Typical Value N･m (㎏f･B) 670 g ■Electrical Characteristics Symbol Item Conditions ICBO Collector Cut-off Current VCB＝1000V IEBO Emitter Cut-off Current VEB＝10V hFE DC Current Gain Ic＝300A，VCE＝2.8V Ic＝400A，VCE＝5V Ratings Min. Max. Unit 3.0 mA 1000 mA 75 100 VCE（sat） Collector-Emitter Sturation Voltage Ic＝400A，IB＝8A 2.5 V VBE（sat） Base-Emitter Saturation Voltage Ic＝400A，IB＝8A 3.5 V ton ts On Time Switching Time tf VECO Rth（j-c） Storage Time Fall Time 3.0 Vcc＝600V，Ic＝400A IB1＝8A，IB2＝−8A 16.0 Ic＝−400A Collector-Emitter Reverse Voltage 1.8 Thermal Impedance (junction to case) Transistor part 0.04 Diode part 0.16 SanRex μs 3.0 V ℃/W ® 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: [email protected] SQD400AA100 D.C. Current Gain Collector-Emitter Voltage VＣＥ （V） Base-Emitter Voltage VBE（V） ２ DC Current Gain hFE １０3 ５ Tj＝125℃ ２ Tj＝25℃ ２ １０ VCE＝5V ５ VCE＝2.8V Typical ２ ０ １０ ２ ５ １０１ ２ ５ １０２ ２ ５ １０１ Saturation Characteristics Tj＝25℃ Tj＝125℃ IB＝8.0A Typical ５ ２ VBE （sat） VCE （sat） １００ ５ ０ １０ １０３ ２ ５ Forward Bias Safe Operating Area ５ Pulse Wide ２ １０２ ５ Tc＝25℃ Non-Repetitive ２ １０２ ２ IB2＝−16A ４００ ３００ ２００ Tj＝125℃ ０ ０ １０３ ５ Collector Reverse Current -Ic（A） Derating Factor（%） Non-Repetitive ５０ １００ １５０ ５ Transient Thermal Impedance θj-c（℃/W） Switching Time ton tf ts（μs） ６００ ８００ １０００ Typical １０２ ５ ２ １０１ ５ Tj＝25℃ Tj＝125℃ ２ １００ ０ １ ２ Emitter-Collector Voltage VECO（V） Collector Current Vs Switching Time １０-１ Typical １０１ ４００ Forward Voltage of Free Wheeling Diode ２ Case Temperature（℃） ２ ２００ Collector-Emitter Voltage VCE（V） IS/B Limited ０ ０ ５ ５００ Collector Current Derating Factor ５０ ２ IB2＝−8A ６００ Collector-Emitter Voltage VCE（V） １００ １０２ ５ ７００ １００ １ １０ ２ Reverse Bias Safe Operating Area ８００ 50 10 μs 0μ s 20 0μ s Collector Current Ic（A） Collector Current Ic（A） １０3 １０１ Collector Current Ic（A） Collector Current Ic（A） ts ５ ２ Maximum Transient Thermal Impedance Characteristics Junction to case Transistor Part Max. ５ 100msec∼10sec ２ 1msec∼100msec １０-２ ０ １０ tf IB1＝8.0A IB2＝−8.0A VCC＝600V Tj＝25℃ ５ ton ２ ０ ５０ １００ １５０ ２００ ２５０ ３００ Collector Current Ic（A） ３５０ ４００ ５ １０-３ １０-１ ２ ２ ５ ５ １０-２ １００ ２ ２ ５ １０-１ Time t（sec） SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: [email protected]