MOTOROLA MJD32-1

Order this document
by MJD31/D
SEMICONDUCTOR TECHNICAL DATA
DPAK For Surface Mount Applications
*Motorola Preferred Device
Designed for general purpose amplifier and low speed switching applications.
•
•
•
•
Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
Straight Lead Version in Plastic Sleeves (“–1” Suffix)
Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
Electrically Similar to Popular TIP31 and TIP32 Series
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SILICON
POWER TRANSISTORS
3 AMPERES
40 AND 100 VOLTS
15 WATTS
MAXIMUM RATINGS
MJD31C
MJD32C
Unit
VCEO
40
100
Vdc
Collector–Base Voltage
VCB
40
100
Vdc
Emitter–Base Voltage
VEB
5
Vdc
Collector Current — Continuous
Peak
IC
3
5
Adc
Base Current
IB
1
Adc
Total Power Dissipation @ TC = 25_C
Derate above 25_C
PD
15
0.12
Watts
W/_C
Total Power Dissipation* @ TA = 25_C
Derate above 25_C
PD
1.56
0.012
Watts
W/_C
TJ, Tstg
– 65 to + 150
_C
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
8.3
_C/W
Thermal Resistance, Junction to Ambient*
RθJA
80
_C/W
Lead Temperature for Soldering Purposes
TL
260
_C
Collector–Emitter Voltage
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
CASE 369A–13
CASE 369–07
MINIMUM PAD SIZES
RECOMMENDED FOR
SURFACE MOUNTED
APPLICATIONS
0.165
4.191
MJD31
MJD32
0.190
4.826
Symbol
Rating
0.243
6.172
0.063
1.6
0.118
3.0
0.07
1.8
* These ratings are applicable when surface mounted on the minimum pad size recommended.
inches
mm
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
 Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
1
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v
v
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
40
100
—
—
ICEO
—
50
µAdc
Collector Cutoff Current
(VCE = Rated VCEO, VEB = 0)
ICES
—
20
µAdc
Emitter Cutoff Current
(VBE = 5 Vdc, IC = 0)
IEBO
—
1
mAdc
25
10
—
50
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(IC = 30 mAdc, IB = 0)
Collector Cutoff Current
(VCE = 40 Vdc, IB = 0)
(VCE = 60 Vdc, IB = 0)
VCEO(sus)
MJD31, MJD32
MJD31C, MJD32C
Vdc
MJD31, MJD32
MJD31C, MJD32C
ON CHARACTERISTICS (1)
hFE
DC Current Gain
(IC = 1 Adc, VCE = 4 Vdc)
(IC = 3 Adc, VCE = 4 Vdc)
—
Collector–Emitter Saturation Voltage
(IC = 3 Adc, IB = 375 mAdc)
VCE(sat)
—
1.2
Vdc
Base–Emitter On Voltage
(IC = 3 Adc, VCE = 4 Vdc)
VBE(on)
—
1.8
Vdc
Current Gain — Bandwidth Product (2)
(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1 MHz)
fT
3
—
MHz
Small–Signal Current Gain
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 kHz)
hfe
20
—
—
DYNAMIC CHARACTERISTICS
(1) Pulse Test: Pulse Width
(2) fT = hfe• ftest.
2
300 µs, Duty Cycle
2%.
Motorola Bipolar Power Transistor Device Data
TYPICAL CHARACTERISTICS
VCC
+ 30 V
PD, POWER DISSIPATION (WATTS)
TA TC
2.5 25
+11 V
1.5 15
TA (SURFACE MOUNT)
0.5
5
0
0
tr, tf ≤ 10 ns
DUTY CYCLE = 1%
TC
1 10
25
50
75
100
T, TEMPERATURE (°C)
125
TJ = 150°C
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
REVERSE ALL POLARITIES FOR PNP.
150
Figure 2. Switching Time Test Circuit
VCE = 2 V
1
25°C
70
50
– 55°C
t, TIME ( µs)
0.7
0.5
100
30
0.3
IC/IB = 10
TJ = 25°C
tr @ VCC = 30 V
tr @ VCC = 10 V
0.1
10
7
5
0.03
0.07
0.05
0.05 0.07 0.1
0.3
0.5
0.7
0.03
0.02
0.03
3
1
td @ VBE(off) = 2 V
0.05 0.07 0.1
0.3
1
3
Figure 4. Turn–On Time
Figure 3. DC Current Gain
3
2
1.4
TJ = 25°C
1
t, TIME ( µs)
1
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE @ VCE = 2 V
0.4
IB1 = IB2
IC/IB = 10
ts′ = ts – 1/8 tf
TJ = 25°C
ts′
tf @ VCC = 30 V
0.7
0.5
0.3
0.2
tf @ VCC = 10 V
0.1
0.07
0.05
VCE(sat) @ IC/IB = 10
0
0.003 0.005 0.01 0.02 0.03 0.05
0.5 0.7
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
0.2
–4 V
2
300
1.2
D1
51
–9 V
500
hFE, DC CURRENT GAIN
SCOPE
RB
0
Figure 1. Power Derating
V, VOLTAGE (VOLTS)
RC
25 µs
2 20
0.1
0.2 0.3 0.5
1
2 3
0.03
0.03
0.05 0.07 0.1
0.2
0.3
0.5 0.7
1
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 5. “On” Voltages
Figure 6. Turn–Off Time
Motorola Bipolar Power Transistor Device Data
3
2
3
300
2
TJ = + 25°C
TJ = 25°C
200
1.6
IC = 0.3 A
1.2
1A
CAPACITANCE (pF)
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
3A
0.8
Ceb
70
50
0.4
0
100
1
2
5
10
20
50 100
IB, BASE CURRENT (mA)
200
500
30
0.1
1000
Ccb
0.5
1
10
2 3
5
VR, REVERSE VOLTAGE (VOLTS)
0.2 0.3
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
Figure 7. Collector Saturation Region
1
0.7
0.5
20 30 40
Figure 8. Capacitance
D = 0.5
0.3
0.2
0.2
RθJC(t) = r(t) RθJC
RθJC = 8.33°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) θJC(t)
0.1
0.1
0.05
0.07
0.05
0.01
0.03
SINGLE PULSE
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.02
0.01
0.01
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1
2 3
5
t, TIME (ms)
10
20
30
50
100
200 300
500
1k
Figure 9. Thermal Response
IC, COLLECTOR CURRENT (AMPS)
10
5
3
2
1 ms
1
0.5
0.3
0.2
0.1
0.05
0.03
0.02
100 µs
500 µs
dc
WIRE BOND LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
CURVES APPLY BELOW RATED VCEO
TC = 25°C SINGLE PULSE
TJ = 150°C
MJD31, MJD32
MJD31C, MJD32C
0.01
1.5 2
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 10 is based on T J(pk) = 150_C; T C is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T J(pk)
150_C. T J(pk) may be calculated from the data in Figure 9. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
v
3
5 7 10
20 30
50 70 100 150
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 10. Active Region Safe Operating Area
4
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
–T–
E
R
4
Z
A
S
1
2
DIM
A
B
C
D
E
F
G
H
J
K
L
R
S
U
V
Z
3
U
K
F
J
L
H
D
G
2 PL
0.13 (0.005)
M
T
INCHES
MIN
MAX
0.235
0.250
0.250
0.265
0.086
0.094
0.027
0.035
0.033
0.040
0.037
0.047
0.180 BSC
0.034
0.040
0.018
0.023
0.102
0.114
0.090 BSC
0.175
0.215
0.020
0.050
0.020
–––
0.030
0.050
0.138
–––
STYLE 1:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.84
1.01
0.94
1.19
4.58 BSC
0.87
1.01
0.46
0.58
2.60
2.89
2.29 BSC
4.45
5.46
0.51
1.27
0.51
–––
0.77
1.27
3.51
–––
BASE
COLLECTOR
EMITTER
COLLECTOR
CASE 369A–13
ISSUE W
C
B
V
E
R
4
A
1
2
3
S
–T–
K
SEATING
PLANE
J
F
H
D
G
3 PL
0.13 (0.005)
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
INCHES
MIN
MAX
0.235
0.250
0.250
0.265
0.086
0.094
0.027
0.035
0.033
0.040
0.037
0.047
0.090 BSC
0.034
0.040
0.018
0.023
0.350
0.380
0.175
0.215
0.050
0.090
0.030
0.050
STYLE 1:
PIN 1.
2.
3.
4.
T
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.84
1.01
0.94
1.19
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.46
1.27
2.28
0.77
1.27
BASE
COLLECTOR
EMITTER
COLLECTOR
CASE 369–07
ISSUE K
Motorola Bipolar Power Transistor Device Data
5
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
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6
◊
Motorola Bipolar Power Transistor Device Data
*MJD31/D*
MJD31/D