Order this document by MJD122/D SEMICONDUCTOR TECHNICAL DATA DPAK For Surface Mount Applications *Motorola Preferred Device Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATTS • • • • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Straight Lead Version in Plastic Sleeves (“–1” Suffix) Lead Formed Version Available in 16 mm Tape and Reel (“T4” Suffix) Surface Mount Replacements for 2N6040–2N6045 Series, TIP120–TIP122 Series, and TIP125–TIP127 Series • Monolithic Construction With Built–in Base–Emitter Shunt Resistors • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Complementary Pairs Simplifies Designs ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS Unit VCEO 100 Vdc Collector–Base Voltage VCB 100 Vdc Emitter–Base Voltage VEB 5 Vdc Collector Current — Continuous Peak IC 8 16 Adc Base Current IB 120 mAdc Total Power Dissipation @ TC = 25_C Derate above 25_C PD 20 0.16 Watts W/_C Total Power Dissipation* @ TA = 25_C Derate above 25_C PD 1.75 0.014 Watts W/_C TJ, Tstg – 65 to + 150 _C Symbol Max Unit Thermal Resistance, Junction to Case RθJC 6.25 _C/W Thermal Resistance, Junction to Ambient* RθJA 71.4 _C/W Collector–Emitter Voltage Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic CASE 369A–13 CASE 369–07 MINIMUM PAD SIZES RECOMMENDED FOR SURFACE MOUNTED APPLICATIONS 0.165 4.191 MJD122 MJD127 0.190 4.826 Symbol Rating Characteristic Symbol Min Max Unit VCEO(sus) 100 — Vdc ICEO — 10 µAdc 0.07 1.8 ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) * These ratings are applicable when surface mounted on the minimum pad sizes recommended. (continued) 0.063 1.6 Collector Cutoff Current (VCE = 50 Vdc, IB = 0) 0.243 6.172 Collector–Emitter Sustaining Voltage (IC = 30 mAdc, IB = 0) 0.118 3.0 OFF CHARACTERISTICS inches mm Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ v v ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS — continued (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max — — 10 500 Unit OFF CHARACTERISTICS — continued µAdc Collector Cutoff Current (VCE = 100 Vdc, VBE(off) = 1.5 Vdc) (VCE = 100 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C) ICEX Collector Cutoff Current (VCB = 100 Vdc, IE = 0) ICBO — 10 µAdc Emitter Cutoff Current (VBE = 5 Vdc, IC = 0) IEBO — 2 mAdc 1000 100 12,000 — — — 2 4 ON CHARACTERISTICS DC Current Gain (IC = 4 Adc, VCE = 4 Vdc) (IC = 8 Adc, VCE = 4 Vdc) hFE — Collector–Emitter Saturation Voltage (IC = 4 Adc, IB = 16 mAdc) (IC = 8 Adc, IB = 80 mAdc) VCE(sat) Vdc Base–Emitter Saturation Voltage (1) (IC = 8 Adc, IB = 80 mAdc) VBE(sat) — 4.5 Vdc Base–Emitter On Voltage (IC = 4 Adc, VCE = 4 Vdc) VBE(on) — 2.8 Vdc |hfe| 4 — MHz — — 300 200 300 — DYNAMIC CHARACTERISTICS Current–Gain–Bandwidth Product (IC = 3 Adc, VCE = 4 Vdc, f = 1 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) Cob Small–Signal Current Gain (IC = 3 Adc, VCE = 4 Vdc, f = 1 kHz) (1) Pulse Test: Pulse Width pF MJD127 MJD122 hfe 300 µs, Duty Cycle — 2%. PD, POWER DISSIPATION (WATTS) TA TC 2.5 25 2 20 TC 1.5 15 TA SURFACE MOUNT 1 10 0.5 5 0 0 25 50 75 100 T, TEMPERATURE (°C) 125 150 Figure 1. Power Derating 2 Motorola Bipolar Power Transistor Device Data TYPICAL ELECTRICAL CHARACTERISTICS PNP MJD127 NPN MJD122 20,000 20,000 VCE = 4 V VCE = 4 V 10,000 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 10,000 7000 5000 TJ = 150°C 3000 2000 25°C 1000 700 500 300 200 0.1 – 55°C 0.2 5000 TJ = 150°C 3000 2000 25°C 1000 – 55°C 500 0.3 0.5 0.7 1 2 3 5 7 300 200 0.1 10 0.2 0.5 0.7 0.3 IC, COLLECTOR CURRENT (AMP) 1 2 3 5 7 10 IC, COLLECTOR CURRENT (AMP) 3 VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 2. DC Current Gain TJ = 25°C 2.6 IC = 2 A 4A 6A 2.2 1.8 1.4 1 0.3 0.5 0.7 2 1 3 5 10 7 20 30 3 TJ = 25°C 2.6 IC = 2 A 4A 6A 2.2 1.8 1.4 1 0.3 0.5 0.7 1 2 3 5 7 10 20 30 IB, BASE CURRENT (mA) IB, BASE CURRENT (mA) Figure 3. Collector Saturation Region 3 3 TJ = 25°C TJ = 25°C 2.5 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 2.5 2 1.5 1 VBE @ VCE = 4 V VBE(sat) @ IC/IB = 250 2 1.5 VBE @ VCE = 4 V 1 VCE(sat) @ IC/IB = 250 VCE(sat) @ IC/IB = 250 0.5 0.1 0.2 0.3 0.5 0.7 VBE(sat) @ IC/IB = 250 1 2 3 5 7 10 0.5 0.1 IC, COLLECTOR CURRENT (AMP) 0.2 0.3 0.5 0.7 1 2 3 5 7 10 IC, COLLECTOR CURRENT (AMP) Figure 4. “On” Voltages Motorola Bipolar Power Transistor Device Data 3 TYPICAL ELECTRICAL CHARACTERISTICS NPN MJD122 +5 θV, TEMPERATURE COEFFICIENTS (mV/°C) θV, TEMPERATURE COEFFICIENTS (mV/°C) PNP MJD127 *IC/IB ≤ hFE/3 +4 +3 +2 +1 0 25°C to 150°C θVC for VCE(sat) –1 –2 –3 – 55°C to 25°C 25°C to 150°C θVB for VBE – 55°C to 25°C –4 –5 0.1 0.2 0.3 1 2 3 0.5 IC, COLLECTOR CURRENT (AMP) 5 7 +5 *IC/IB ≤ hFE/3 +4 +3 25°C to 150°C +2 – 55°C to 25°C +1 0 *θVC for VCE(sat) –1 –2 –3 –4 –5 0.1 10 25°C to 150°C θVB for VBE – 55°C to 25°C 0.2 0.3 0.5 0.7 1 2 3 IC, COLLECTOR CURRENT (AMP) 5 7 10 Figure 5. Temperature Coefficients 105 105 REVERSE FORWARD IC, COLLECTOR CURRENT ( µ A) IC, COLLECTOR CURRENT ( µ A) REVERSE 104 VCE = 30 V 103 102 TJ = 150°C 101 100°C 100 25°C 10–1 0 – 0.2 – 0.4 – 0.6 – 0.8 – 1 + 0.6 + 0.4 + 0.2 VBE, BASE–EMITTER VOLTAGE (VOLTS) FORWARD 104 VCE = 30 V 103 102 TJ = 150°C 101 100 100°C 25°C 10–1 – 0.6 – 0.4 – 0.2 0 + 0.2 + 0.4 + 0.6 + 0.8 + 1 VBE, BASE–EMITTER VOLTAGE (VOLTS) – 1.2 – 1.4 + 1.2 + 1.4 Figure 6. Collector Cut–Off Region 300 5000 3000 2000 200 TJ = 25°C C, CAPACITANCE (pF) hfe , SMALL–SIGNAL CURRENT GAIN 10,000 1000 500 300 200 TC = 25°C VCE = 4 Vdc IC = 3 Adc 100 50 30 20 10 2 5 10 20 50 100 f, FREQUENCY (kHz) 200 Figure 7. Small–Signal Current Gain 4 100 70 Cib 50 PNP NPN 1 Cob 500 1000 PNP NPN 30 0.1 0.2 0.5 1 2 5 10 20 50 VR, REVERSE VOLTAGE (VOLTS) Figure 8. Capacitance Motorola Bipolar Power Transistor Device Data 100 5 RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1, MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA VCC – 30 V RC SCOPE RB 51 ≈ 8 k ≈ 120 D1 +4V 25 µs FOR td AND tr, D1 IS DISCONNECTED AND V2 = 0 FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES. tr, tf ≤ 10 ns DUTY CYCLE = 1% PNP NPN ts tf 1 t, TIME ( µs) TUT V2 APPROX +8 V 0 V1 APPROX –12 V 3 2 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.1 0.2 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 9. Switching Times Test Circuit 1 0.7 0.5 tr VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25°C td @ VBE(off) = 0 V 0.3 0.5 0.7 1 3 2 IC, COLLECTOR CURRENT (AMP) 5 7 10 Figure 10. Switching Times D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 0.05 0.03 SINGLE PULSE RθJC(t) = r(t) RθJC RθJC = 6.25°C/W D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) θJC(t) 0.01 0.02 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 t, TIME OR PULSE WIDTH (ms) 20 30 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 50 100 200 300 500 1000 IC, COLLECTOR CURRENT (AMP) Figure 11. Thermal Response 20 15 10 500 µs There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 12 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) < 150_C. T J(pk) may be calculated from the data in Figure 11. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100 µs 5 3 2 0.5 0.3 0.2 5 ms BONDING WIRE LIMIT THERMAL LIMIT TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED VCEO 0.1 0.05 0.03 0.02 1 ms TJ = 150°C 1 1 2 3 5 7 10 20 dc 30 50 70 100 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 12. Maximum Forward Bias Safe Operating rea Motorola Bipolar Power Transistor Device Data 5 COLLECTOR PNP BASE COLLECTOR NPN BASE ≈8k ≈ 120 ≈8k EMITTER ≈ 120 EMITTER Figure 13. Darlington Schematic 6 Motorola Bipolar Power Transistor Device Data PACKAGE DIMENSIONS C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE –T– E R 4 Z A S 1 2 DIM A B C D E F G H J K L R S U V Z 3 U K F J L H D G 2 PL 0.13 (0.005) M T INCHES MIN MAX 0.235 0.250 0.250 0.265 0.086 0.094 0.027 0.035 0.033 0.040 0.037 0.047 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.175 0.215 0.020 0.050 0.020 ––– 0.030 0.050 0.138 ––– STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.84 1.01 0.94 1.19 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.45 5.46 0.51 1.27 0.51 ––– 0.77 1.27 3.51 ––– BASE COLLECTOR EMITTER COLLECTOR CASE 369A–13 ISSUE W C B V E R 4 A 1 2 3 S –T– K SEATING PLANE J F H D G 3 PL 0.13 (0.005) M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E F G H J K R S V INCHES MIN MAX 0.235 0.250 0.250 0.265 0.086 0.094 0.027 0.035 0.033 0.040 0.037 0.047 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.175 0.215 0.050 0.090 0.030 0.050 STYLE 1: PIN 1. 2. 3. 4. T MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.84 1.01 0.94 1.19 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.46 1.27 2.28 0.77 1.27 BASE COLLECTOR EMITTER COLLECTOR CASE 369–07 ISSUE K Motorola Bipolar Power Transistor Device Data 7 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. 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