MOTOROLA BD808

Order this document
by BD808/D
SEMICONDUCTOR TECHNICAL DATA
*Motorola Preferred Device
10 AMPERE
POWER TRANSISTORS
PNP SILICON
60, 80 VOLTS
90 WATTS
. . . designed for use in high power audio amplifiers utilizing complementary or quasi
complementary circuits.
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x
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• DC Current Gain — hFE = 30 (Min) @ IC = 2.0 Adc
• BD 808, 810 are complementary with BD 807, 890
MAXIMUM RATINGS
Symbol
Type
Value
Unit
Collector–Emitter Voltage
Rating
VCEO
BD808
BD810
60
80
Vdc
Collector–Base Voltage
VCBO
BD808
BD810
70
80
Vdc
Emitter–Base Voltage
VEBO
5.0
Vdc
Collector Current
IC
10
Adc
Base Current
IB
6.0
Adc
Total Device Dissipation TC = 25_C
Derate above 25_C
PD
90
720
Watts
mW/_C
TJ, Tstg
– 55 to + 150
_C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
θJC
1.39
_C/W
Thermal Resistance, Junction to Case
CASE 221A–06
TO–220AB
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Collector–Emitter Sustaining Voltage*
(IC = 0.1 Adc, IB = 0)
Symbol
Type
Min
Max
Unit
BVCEO
BD808
BD810
60
80
—
—
Vdc
BD808
BD810
—
—
1.0
1.0
—
2.0
30
15
—
—
Collector Cutoff Current
(VCB = 70 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
ICBO
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
DC Current Gain
(IC = 2.0 A, VCE = 2.0 V)
(IC = 4.0 A, VCE = 2.0 V)
hFE
mAdc
mAdc
Collector–Emitter Saturation Voltage*
(IC = 3.0 Adc, IB = 0.3 Adc)
VCE(sat)
—
1.1
Vdc
Base–Emitter On Voltage*
(IC = 4.0 Adc, VCE = 2.0 Vdc)
VBE(on)
—
1.6
Vdc
fT
1.5
—
MHz
Current–Gain Bandwidth Product
(IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)
* Pulse Test: Pulse Width
300 µs, Duty Cycle
2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 7
 Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
1
3
dc
TJ = 150°C
1
0.3
0.1
.5 ms
1 ms
1 ms
5 ms
10
PD, POWER DISSIPATION (WATTS)
IC, COLLECTOR CURRENT (AMP)
90
BD808
BD810
3
10
30
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
1
80
70
60
50
40
30
20
10
0
100
0
25
100
125
150
175
Figure 2. Power–Temperature Derating Curve
2.0
500
1.8
TJ = 25°C
300
VCE = 2.0 V
1.6
hFE, DC CURRENT GAIN
TJ = 150°C
1.4
1.2
VBE(sat) @ IC/IB = 10
1.0
0.8
0.6
VCE(sat) @ IC/IB = 10
0.4
0
0.01
0.02
0.05
25°C
100
50
– 55°C
10
VBE @ VCE = 2.0 V
0.2
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
5.0
0.01
IC, COLLECTOR CURRENT (AMP)
0.05 0.1
0.5 1.0
IC, COLLECTOR CURRENT (AMPS)
Figure 3. “On” Voltages
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
75
TC, CASE TEMPERATURE (°C)
Figure 1. Active Region DC Safe Operating Area
(see Note 1)
VOLTAGE (VOLTS)
50
1.0
0.7
0.5
0.01
0.01
Figure 4. Current Gain
0.2
0.1
SINGLE P(pk)
PULSE
0.05
θJC(t) = r(t) θJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) θJC(t)
0.02
0.03
0.02
10
D = 0.5
0.3
0.2
0.1
0.07
0.05
5.0
SINGLE PULSE
0.01
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0 5.0
t, PULSE WIDTH (ms)
20
30
50
t1
t2
DUTY CYCLE, D = t1/t2
100
200 300
500
1000
Figure 5. Thermal Response
Note 1:
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
2
The data of Figure 1 is based on T J(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T J(pk)
150_C. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
v
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
–T–
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
–––
–––
0.080
STYLE 1:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
–––
–––
2.04
BASE
COLLECTOR
EMITTER
COLLECTOR
CASE 221A–06
TO–220AB
ISSUE Y
Motorola Bipolar Power Transistor Device Data
3
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4
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Motorola Bipolar Power Transistor Device Data
*BD808/D*
BD808/D