Order this document by TP3006/D SEMICONDUCTOR TECHNICAL DATA The RF Line The TP3006 is designed for cellular radio base station amplifiers up to 960 MHz. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. The TP3006 also features input and output matching networks and high impedances. It can easily operate in a full 870– 960 MHz bandwidth in a simple circuit. 5 W, 870 – 960 MHz RF POWER TRANSISTOR NPN SILICON • Class AB Operation • Specified 26 Volts, 960 MHz Characteristics Output Power — 5 Watts Gain — 9 dB min Efficiency — 45% min • Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. MAXIMUM RATINGS Symbol Value Unit Collector–Emitter Voltage Rating VCER 45 Vdc Collector–Base Voltage VCBO 55 Vdc Emitter–Base Voltage VEBO 3.5 Vdc IC 2 Adc Tstg – 40 to +100 °C Operating Junction Temperature TJ 200 °C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 25 0.14 Watts W/°C Collector–Current — Continuous Storage Temperature Range CASE 319–07, STYLE 2 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (1) Symbol Max Unit RθJC 7 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = 15 mA, RBE = 75 Ω) V(BR)CER 45 — — Vdc Emitter–Base Breakdown Voltage (IE = 4 mAdc) V(BR)EBO 3.5 — — Vdc Collector–Base Breakdown Voltage (IC = 15 mAdc) V(BR)CBO 55 — — Vdc ICER — — 4 mA hFE 15 — 100 — OFF CHARACTERISTICS Collector–Emitter Leakage (VCE = 26 V, RBE = 75 Ω) ON CHARACTERISTICS DC Current Gain (IC = 0.5 Adc, VCE = 10 Vdc) NOTE: (continued) 1. Thermal resistance is determined under specified RF operating condition at temperature test point (see drawing of the package). REV 6 RF DEVICE DATA MOTOROLA Motorola, Inc. 1994 TP3006 1 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.) Symbol Min Typ Max Unit Cob — 8.5 — pF Gp 9 10.5 — dB h 45 50 — % Pin 3 — — dB 3rd Order Intermodulation (VCC = 26 V, Ppeak= 5 W, ICQ = 50 mA, f = 900 MHz) IMD3 — – 46 — dB 5th Order Intermodulation (VCC = 26 V, Ppeak= 5 W, ICQ = 50 mA, f = 900 MHz) IMD5 — – 46 — dB Characteristic DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 26 V, IE = 0, f = 1 MHz ) FUNCTIONAL TESTS IN CW Common–Emitter Amplifier Power Gain (VCC = 26 V, Pout = 5 W, ICQ = 50 mA, f = 960 MHz) Collector Efficiency (VCC = 26 V, Pout = 5 W, IQ = 50 mA, f = 960 MHz) Input Overdrive (no degradation in Pout) (VCC = 26 V, IQ = 50 mA, f = 960 MHz) FUNCTIONAL TESTS IN 2 TONES f = 870 MHz ZOL f = 870 MHz Zin 960 Zo = 10 Ω 960 Pout = 5 W (CW), VCE = 26 V, ICQ = 50 mA f (MHz) Zin (Ω) ZOL (Ω) 870 6.26 – j6.40 5.22 + j9.47 900 7.40 – j12.3 4.17+ j9.02 960 14.8 – j12.9 4.21 + j9.91 Figure 1. Series Equivalent Input and Output Impedances TP3006 2 MOTOROLA RF DEVICE DATA T2 T1 C5 +VCC + C4 C9 R3 R2 D1 C8 C6 D2* C7 R1 C3 RF OUTPUT RF INPUT C2 DUT C1 *CONTACT WITH RF TRANSISTOR 50 Ω 50 Ω C1 C2,C3 C4,C7 C5,C9 C6,C8 D1,D2 22 pF, 5%, Chip Capacitor 0805 330 pF, Chip Capacitor 0805 15 nF, 5%, Chip Capacitor 0805 6.8 F, 35 V, Chip Capacitor 0805 330 pF, Chip Capacitor 0805 SMD Diode 2.2 Ω, 5%, Chip Resistor 1206 51 Ω, 5%, Chip Resistor 0805 470 Ω, 5%, Chip Resistor 0805 to be adjusted for IQ = 50 mA SMD Transistor, BCX54 or Similar Voltage Regulator 7805 R1 R2 R3 T1 T2 Figure 2. 960 MHz Electrical Schematic – 25 3rd ORDER – 35 5th ORDER – 45 VCE = 26 V ICQ = 50 mA f = 900 MHz 1 2 3 4 5 6 7 IMD, INTERMODULATION DISTORTION (dB) IMD, INTERMODULATION DISTORTION (dB) TYPICAL CHARACTERITICS CW – WIDEBAND – 25 3rd ORDER – 35 5th ORDER – 45 8 VCE = 26 V ICQ = 100 mA f = 900 MHz 1 Pout, OUTPUT POWER (WATTS) Figure 3. Intermodulation versus Output Power 2 6 3 4 5 Pout, OUTPUT POWER (WATTS) 7 8 Figure 4. Intermodulation versus Output Power PEAK POWER – 6 dB IMD 0.1 MHz MOTOROLA RF DEVICE DATA TP3006 3 TYPICAL CHARACTERITICS CW – WIDEBAND 8 Pout , OUTPUT POWER (WATTS) η, EFFICIENCY (%) 60 50 40 30 VCE = 28 V ICQ = 50 mA f = 960 MHz 20 2 3 4 6 5 7 7 6 VCC = 24 V 5 4 3 VCE = 28 V ICQ = 50 mA f = 960 MHz 2 1 8 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) Figure 5. Collector Efficiency versus Output Power Figure 6. Output Power versus Input Power T2 C5 R2 C4 C3 0.9 C9 R3 D1 T1 D2 R1 C8 C7 C1 C2 OUTPUT INPUT EPOXY GLASS 0.8 mm GI 180 PERSTORP DOUBLE SIDE 35 µm Cu. Figure 7. 960 MHz Test Circuit Components View TP3006 4 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS Q 2 PL -AL IDENTIFICATION NOTCH 6 5 0.15 (0.006) M T A M N M 4 -N1 2 3 DIM A B C D E F H J K L N Q K F D 2 PL 0.38 (0.015) M B 0.38 (0.015) T A M N M T A M M N M STYLE 2: PIN 1. 2. 3. 4. 5. 6. J H C E -T- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.965 0.985 0.355 0.375 0.230 0.260 0.115 0.125 0.102 0.114 0.075 0.085 0.160 0.170 0.004 0.006 0.090 0.110 0.725 BSC 0.225 0.241 0.125 0.135 MILLIMETER MIN MAX 24.52 25.01 9.02 9.52 5.85 6.60 2.93 3.17 2.59 2.90 1.91 2.15 4.07 4.31 0.11 0.15 2.29 2.79 18.42 BSC 5.72 6.12 3.18 3.42 EMITTER (COMMON) BASE (INPUT) EMITTER (COMMON) EMITTER (COMMON) COLLECTOR (OUTPUT) EMITTER (COMMON) SEATING PLANE CASE 319–07 ISSUE M MOTOROLA RF DEVICE DATA TP3006 5 Motorola reserves the right to make changes without further notice to any products herein. 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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. TP3006 6 ◊ *TP3006/D* MOTOROLA RF DEVICETP3006/D DATA