Order this document by MRF422/D SEMICONDUCTOR TECHNICAL DATA The RF Line Designed primarily for applications as a high–power linear amplifier from 2.0 to 30 MHz. • Specified 28 Volt, 30 MHz Characteristics — Output Power = 150 W (PEP) Minimum Gain = 10 dB Efficiency = 40% 150 W (PEP), 30 MHz RF POWER TRANSISTORS NPN SILICON • Intermodulation Distortion @ 150 W (PEP) — IMD = – 30 dB (Min) • 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR CASE 211–11, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 85 Vdc Emitter–Base Voltage VEBO 3.0 Vdc Collector Current — Continuous IC 20 Adc Withstanding Current — 10 s — 30 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 290 1.66 Watts W/°C Storage Temperature Range Tstg – 65 to +150 °C Symbol Max Unit RθJC 0.6 °C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = 200 mAdc, IB = 0) V(BR)CEO 35 — — Vdc Collector–Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) V(BR)CES 85 — — Vdc Collector–Base Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CBO 85 — — Vdc Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 3.0 — — Vdc ICES — — 20 mAdc Characteristic OFF CHARACTERISTICS Collector Cutoff Current (VCE = 28 Vdc, VBE = 0, TC = 25°C) (continued) REV 6 RF DEVICE DATA MOTOROLA Motorola, Inc. 1994 MRF422 1 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit hFE 15 30 120 — Cob — 420 — pF Common–Emitter Amplifier Power Gain (VCC = 28 Vdc, Pout = 150 W (PEP), IC(max) = 6.7 Adc, ICQ = 150 mAdc, f = 30, 30.001 MHz) GPE 10 13 — dB Collector Efficiency (VCC = 28 Vdc, Pout = 150 W (PEP), IC(max) = 6.7 Adc, ICQ = 150 mAdc, f = 30, 30.001 MHz) η — 45 — % Intermodulation Distortion (1) (VCE = 28 Vdc, Pout = 150 W (PEP), IC = 6.7 Adc, ICQ = 150 mAdc, f = 30, 30.001 MHz) IMD — – 33 – 30 dB Output Power (VCE = 28 Vdc, f = 30 MHz) Pout 150 — — Watts (PEP) ON CHARACTERISTICS DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 28 Vdc, IE = 0, f = 1.0 MHz) FUNCTIONAL TESTS NOTE: 1. To Mil–Std–1311 Version A, Test Method 2204, Two Tone, Reference each Tone. R1 + + BIAS CR1 L5 C6 C7 C8 L2 – C9 C11 28 Vdc L3 L4 C2 C10 C4 – L1 D.U.T. C1 R2 C1, C2, C3, C5 — 170– 680 pF, ARCO 469 C4 — 80 – 480 pF, ARCO 466 C6, C8, C11 — ERIE 0.1 µF, 100 V C7 — MALLORY 500 µF, 15 V Electrolytic C9 — UNDERWOOD 1000 pF, 350 V C10 — 10 µF, 50 V Electrolytic R1 — 10 Ω, 25 Watt Wire Wound R2 — 10 Ω, 1.0 Watt Carbon CR1 — 1N4997 C3 C5 L1 — 3 Turns, #16 Wire, 5/16″ I.D., 5/16″ Long L2 — 10 µH Molded Choke L3 — 12 Turns, #16 Enameled Wire, Close Wound, 1/4″ Dia. L4 — 5 Turns, 1/8″ Copper Tubing L5 — 10 Ferrite Beads — FERROXCUBE #56–590–65/3B Figure 1. 30 MHz Test Circuit Schematic MRF422 2 MOTOROLA RF DEVICE DATA 25 VCC = 28 V ICQ = 150 mA TWO TONE TEST: f = 30, 30.001 MHz 240 200 G PE , POWER GAIN (dB) Pout , OUTPUT POWER (WATTS PEP) 280 160 120 80 15 10 VCC = 28 V ICQ = 150 mA Pout = 150 W PEP 5 40 0 20 0 2 4 6 8 10 Pin, INPUT POWER (WATTS PEP) 12 0 1.5 14 Figure 2. Output Power versus Input Power IMD, INTERMODULATION DISTORTION (dB) Pout , OUTPUT POWER (WATTS PEP) IMD = 30 dB ICQ = 25 mA f = 30, 30.001 MHz 200 160 120 80 40 0 16 3 5 7 10 f, FREQUENCY (MHz) 15 20 30 Figure 3. Power Gain versus Frequency 280 240 2 –10 VCC = 28 V ICQ = 150 mA f = 30, 30.001 MHz – 20 – 30 3RD ORDER – 40 5TH ORDER – 50 20 24 28 VCC, SUPPLY VOLTAGE (VOLTS) 32 Figure 4. Linear Output Power versus Supply Voltage 0 40 80 120 160 Pout, OUTPUT POWER (WATTS PEP) 200 Figure 5. Intermodulation Distortion versus Output Power IC, COLLECTOR CURRENT (AMP) 40 20 TC = 25°C 30 8 15 4 7 2 0.8 0.4 1 2 5 10 20 50 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 6. DC Safe Operating Area MOTOROLA RF DEVICE DATA 100 f = 2 MHz VCC = 28 V ICQ = 150 mA Pout = 150 W PEP FREQUENCY MHz Zin Ohms 2 7 15 30 4.90 – j1.54 2.10 – j0.93 1.32 – j0.38 0.81 – j0.26 Figure 7. Series Input Impedance MRF422 3 10 Cout , PARALLEL EQUIVALENT OUTPUT CAPACITANCE (pF) Rout , PARALLEL EQUIVALENT OUTPUT RESISTANCE (OHMS) 5 4 3 2 VCC = 28 V ICQ = 150 mA Pout = 150 W PEP 1 0 1.5 2 3 5 7 10 f, FREQUENCY (MHz) 15 20 8 6 4 2 0 1.5 30 Figure 8. Output Resistance versus Frequency VCC = 28 V ICQ = 150 mA Pout = 150 W PEP 2 3 5 7 10 f, FREQUENCY (MHz) 15 20 30 Figure 9. Output Capacitance versus Frequency PACKAGE DIMENSIONS A U NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. M 1 M Q DIM A B C D E H J K M Q R U 4 R 2 B 3 D K J C H E SEATING PLANE STYLE 1: PIN 1. 2. 3. 4. INCHES MIN MAX 0.960 0.990 0.465 0.510 0.229 0.275 0.216 0.235 0.084 0.110 0.144 0.178 0.003 0.007 0.435 ––– 45 _NOM 0.115 0.130 0.246 0.255 0.720 0.730 MILLIMETERS MIN MAX 24.39 25.14 11.82 12.95 5.82 6.98 5.49 5.96 2.14 2.79 3.66 4.52 0.08 0.17 11.05 ––– 45 _NOM 2.93 3.30 6.25 6.47 18.29 18.54 EMITTER BASE EMITTER COLLECTOR CASE 211–11 ISSUE N Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. 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Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: [email protected] – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 MRF422 4 ◊ *MRF422/D* MRF422/D MOTOROLA RF DEVICE DATA