SANYO 2SC5291

Ordering number : ENN5282A
2SC5291
NPN Epitaxial Planar Silicon Transistor
2SC5291
High-Voltage Switching Applications
Features
•
•
•
•
Package Dimensions
Adoption of FBET, MBIT processes.
Large current capacity.
Can be provided in taping.
9.5mm onboard mounting height.
unit : mm
2084B
[2SC5291]
4.5
1.9
10.5
2.6
1.4
1.0
8.5
1.2
7.5
1.2
1.6
0.5
0.5
1
2
3
1 : Emitter
2 : Collector
3 : Base
Specifications
2.5
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
2.5
SANYO : FLP
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
180
V
Collector-to-Emitter Voltage
VCEO
160
V
Emitter-to-Base Voltage
VEBO
6
V
IC
1.5
A
2.5
A
Base Current
ICP
IB
300
mA
Collector Dissipation
PC
1.5
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Collector Current
Collector Current (Pulse)
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
Symbol
ICBO
IEBO
Conditions
Ratings
min
typ
max
VCB=120V, IE=0
VEB=4V, IC=0
Unit
1.0
µA
1.0
µA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
12201 TS IM TA-0376 No.5282-1/4
2SC5291
Continued from preceding page.
Parameter
Symbol
Ratings
Conditions
min
typ
Unit
max
hFE1
hFE2
VCE=5V, IC=100mA
100
VCE=5V, IC=10mA
90
fT
Cob
VCE=10V, IC=50mA
VCB=10V, f=1MHz
120
Collector-to-Emitter Saturation Voltage
VCE(sat)
0.13
0.45
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=500mA, IB=50mA
IC=500mA, IB=50mA
0.85
1.2
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Turn-ON Time
Storage Time
400
MHz
14
pF
V
V
ton
tstg
See specified Test Circuit
4.0
ns
See specified Test Circuit
1.2
µs
tf
See specified Test Circuit
8.0
ns
Fall Time
* : The 2SC5291 is classified by 100mA hFE as follows :
Rank
R
hFE
S
T
100 to 200 140 to 280 200 to 400
Switching Time Test Circuit
IB1
OUTPUT
IB2
INPUT
RB
PW=20µs
D.C.=≤1%
RL
50Ω
VR
+
100µF
+
470µF
VBE= --5V
VCC=100V
10IB1=--10IB2=IC=700mA
RL=140Ω, RB=14Ω at IC=700mA
IC -- VCE
IC -- VCE
1.0
m
A
1.8
5.0
50mA
40mA
30mA
1.4
1.2
Collector Current, IC -- A
Collector Current, IC -- A
1.6
20mA
1.0
10mA
5mA
0.8
0.6
2mA
0.4
A
4.5m mA
4.0
3.5mA
0.8
3.0mA
2.5mA
0.6
2.0mA
1.5mA
0.4
1.0mA
0.2
1mA
0.5mA
0.2
0
IB=0
0
1
2
3
4
Collector-to-Emitter Voltage, VCE -- V
0
10
20
30
40
50
Collector-to-Emitter Voltage, VCE -- V
ITR08045
IC -- VBE
1.6
IB=0
0
5
hFE -- IC
1000
VCE=5V
ITR08046
VCE=5V
7
DC Current Gain, hFE
1.2
0.4
--25°C
5°C
25°C
0.8
Ta=
7
Collector Current, IC -- A
5
3
2
Ta=75°C
25°C
--25°C
100
7
5
3
2
0
0
0.2
0.4
0.6
0.8
1.0
Base-to-Emitter Voltage, VBE -- V
1.2
ITR08047
10
7 0.01
2
3
5
7 0.1
2
3
5
Collector Current, IC -- A
7 1.0
2
3
ITR08048
No.5282-2/4
2SC5291
fT -- IC
f=1MHz
7
3
2
100
7
5
3
2
(For PNP, minus sign is omitted.)
2
3
5
7
2
0.1
3
5
7
Collector Current, IC -- A
7
(For PNP, minus sign is omitted.)
2
3
5
7
2
10
3
5
7 100
ITR08050
VBE(sat) -- IC
IC / IB=10
7
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
10
10
1000
7
5
3
2
100
7
25°C
Ta=75°C
5
5
3
2
1.0
25°C
Ta= --25°C
7
75°C
5
--25°C
3
7 0.01
2
3
5 7
2
0.1
3
5
7 1.0
Collector Current, IC -- A
2
3
3
ICP=2.5A
3
5
7 0.1
2
3
7 1.0
5
Collector Current, IC -- A
2
3
ITR08052
PC -- Ta
1.6
10
1.0
7
5
DC
3
op
era
2
s
s
1.4
Collector Dissipation, PC -- W
ms
1m
10
0m
tio
0.1
7
5
n
3
2
2
1.2
1.0
0.8
0.6
0.4
0.2
Tc=25°C
Single pulse
1.0
2
1.5
IC=1.5A
5 7
7 0.01
ITR08051
Forward Bias A S O
5
0.01
7
5
2
Collector-to-Base Voltage, VCB -- V
IC / IB=10
2
3
2
3
3
1
2
1.0
ITR08049
VCE(sat) -- IC
3
2
5
5
10
0.01
Collector Current, IC -- A
Cob -- VCB
100
VCE=10V
Output Capacitance, Cob -- pF
Gain-Bandwidth Product, f T -- MHz
5
3
5
7
10
2
3
5
Collector-to-Emitter Voltage, VCE --
2
7 100
V ITR08053
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
ITR08054
No.5282-3/4
2SC5291
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of January, 2001. Specifications and information herein are subject
to change without notice.
PS No.5282-4/4