2SC5999 Ordering number : ENN8029 2SC5999 NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications Applications • Relay drivers, lamp drivers, motor drivers, inverters. Features • • • • • Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Surface mount type. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 120 V Collector-to-Emitter Voltage VCES 120 V Collector-to-Emitter Voltage VCEO 50 V Emitter-to-Base Voltage VEBO 6 V IC 25 A ICP IB 40 A Collector Current Collector Current (Pulse) Base Current Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Tc=25°C 2 A 1.65 W 40 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol Conditions ICBO IEBO VCB=100V, IE=0 VEB=4V, IC=0 hFE1 VCE=2V, IC=1A VCE=2V, IC=15A hFE2 Ratings min typ max 200 Unit 10 µA 10 µA 560 150 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D2404FA TS IM TB-00000425 No.8029-1/4 2SC5999 Continued from preceding page. Parameter Symbol Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Emitter Breakdown Voltage 170 IC=10A, IB=500mA IC=10A, IB=500mA 150 300 0.93 1.4 Emitter-to-Base Breakdown Voltage V(BR)EBO ton tstg tf Fall Time IC=100µA, IE=0 IC=100µA, RBE=0 IC=1mA, RBE=∞ IE=100µA, IC=0 0.8 4.5 V 6 V 230 ns See specified Test Circuit. 40 ns ns IB1 PW=20µs D.C.≤1% OUTPUT IB2 1.3 1.5max 8.8 VR RB RL 1.4 + 100µF 2.7 2.55 + 470µF VCC=20V VBE= --5V 0 to 0.3 0.4 IC=20IB1= --20IB2=4A 1 : Base 2 : Collector 3 : Emitter SANYO : SMP-FD IC -- VCE 45mA A 50m IC -- VCE 25 40mA 30mA 12 25mA 10 20mA 8 15mA 6 mA 0 25 35mA 10mA 4 5mA Collector Current, IC -- A 16 Collector Current, IC -- A V 50 50Ω 1.35 3.0 9.9 1.2 2.55 14 120 1300 3 2.55 V See specified Test Circuit. INPUT 2.55 V 120 Switching Time Test Circuit 10.2 2 pF mV See specified Test Circuit. Package Dimensions unit : mm 2069C 1 0.8 Unit max VCB=10V, f=1MHz V(BR)CES V(BR)CEO Storage Time typ Cob Collector-to-Emitter Breakdown Voltage Turn-ON Time min VCE(sat) VBE(sat) V(BR)CBO Collector-to-Base Breakdown Voltage Ratings Conditions 150mA mA 200 100mA 20 15 50mA 10 5 2 IB=0 0 0 2 4 6 8 Collector-to-Emitter Voltage, VCE -- V 10 IT07555 IB=0 0 0 1 2 3 4 5 Collector-to-Emitter Voltage, VCE -- V IT07556 No.8029-2/4 2SC5999 IC -- VBE 30 hFE -- IC 1000 VCE=2V VCE=2V 7 DC Current Gain, hFE 20 15 10 Ta= 75° C 25° C --25 °C Collector Current, IC -- A 25 5 Ta=75°C 5 25°C 3 --25°C 2 100 0 0.4 0.6 0.8 1.0 Base-to-Emitter Voltage, VBE -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V °C 25 5 °C 75 = Ta 3 2 5 --2 °C 25°C --25°C Ta=75°C 5 3 2 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Collector Current, IC -- A 5 7 10 2 3 2 0.1 °C 25 7 5 3 5° C --2 25°C --25°C 2 Ta=75°C 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Collector Current, IC -- A 2 3 5 IT07560 Cob -- VCB 1000 IC / IB=20 5 7 IT07558 3 IT07559 f=1MHz 7 2 Output Capacitance, Cob -- pF Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 3 IC / IB=50 0.01 0.01 5 7 VBE(sat) -- IC 3 5 7 1.0 5 2 7 2 3 VCE(sat) -- IC 7 3 0.1 5 7 0.1 Collector Current, IC -- A IC / IB=20 5 2 3 IT07557 VCE(sat) -- IC 7 0.01 7 7 0.01 1.2 75 °C 0.2 Ta = 0 25°C 1.0 Ta= --25°C 7 75°C 5 3 5 3 2 100 2 7 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Collector Current, IC -- A 0µ s s op 1m DC Collector Dissipation, PC -- W s er on ati 1.0 7 5 3 2 2 3 5 7 1.0 3 5 7 10 2 3 5 7 100 IT07562 PC -- Ta 1.4 1.2 N o 1.0 he at sin k 0.8 0.6 0.4 0.2 Tc=25°C Single pulse 0.01 0.1 2 1.65 1.6 s 0µ 50 s 0m 5 7 1.0 1.8 10 10 3 Collector-to-Base Voltage, VCB -- V ≤50µs IC=25A 10 7 5 3 2 2 IT07561 ICP=40A m 10 Collector Current, IC -- A 5 0.1 5 Forward Bias A S O 100 7 5 3 2 0.1 7 5 3 2 2 3 0 2 3 5 7 10 2 3 Collector-to-Emitter Voltage, VCE -- V 5 7 100 IT07563 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT07564 No.8029-3/4 2SC5999 PC -- Tc 45 Collector Dissipation, PC -- W 40 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT07565 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 2004. Specifications and information herein are subject to change without notice. PS No.8029-4/4