SANYO FC133

Ordering number:EN3287
FC133
PNP Epitaxial Planar Silicon Composite Transistor
Switching Applications
(with Bias Resistance)
Features
Package Dimensions
· On-chip bias resistances (R1=10kΩ, R2=47kΩ)).
· Composite type with 2 transistors contained in the
CP package currently in use, improving the mounting efficiency greatly.
· The FC133 is formed with two chips, being equivalent to the 2SA1563, placed in one package.
· Excellent in thermal equilibrium and pair capability.
unit:mm
2066
[FC133]
Electrical Connection
C1:Collector 1
C2:Collector 2
B2:Base 2
EC:Emitter Common
B1:Base 1
C1:Collector 1
C2:Collector 2
B2:Base 2
EC:Emitter Common
B1:Base 1
SANYO:CP5
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
–50
V
Collector-to-Emitter Voltage
VCEO
VEBO
–50
V
IC
–100
Emitter-to-Base Voltage
Collector Current
Peak Collector Current
ICP
Collector Dissipation
PC
Total Power Dissipation
Junction Temperature
Storage Temperature
Tstg
–6
V
mA
–200
mA
200
mW
PT
300
mW
Tj
150
˚C
–55 to +150
˚C
1 unit
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditons
Ratings
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=–40V, IE=0
–0.1
µA
Collector Cutoff Current
ICEO
–0.5
µA
Emitter Cutoff Current
IEBO
VCB=–40V, IB=0
VEB=–5V, IC=0
–125
µA
DC Current Gain
Gain-Bandwidth Product
hFE
fT
VCE=–5V, IC=–5mA
VCE=–10V, IC=–5mA
Output Capacitance
Cob
VCB=–10V, f=1MHz
C-E Saturation Voltage
C-B Breakdown Voltage
C-E Breakdown Voltage
VCE(sat) IC=–10mA, IB=–0.5mA
V(BR)CBO IC=–10µA, IE=0
V(BR)CEO IC=–100µA, RBE=∞
Input OFF-State Voltage
VI(off)
Input ON-State Voltage
VI(on)
Input Resistance
R1
Resistacne Ratio
R1/R2
VCE=–5V, IC=–100µA
VCE=–0.2V, IC=–5mA
–67
–88
70
200
MHz
5.1
pF
–0.1
–0.3
–50
V
V
–50
V
–0.5
–0.7
–0.9
–0.7
–1.0
–2.0
7
10
13
0.193
0.213
0.234
V
V
kΩ
Note:The specifications shown above are for each individual transistor.
Marking:133
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/2190MO, TS No.3287-1/2
FC133
No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property loss.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.
This catalog provides information as of May, 1998. Specifications and information herein are subject to
change without notice.
PS No.3287-2/2